Thermal standardization on semiconductor packages

2022 ◽  
Keyword(s):  
Semiconductor Packages

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Thermal Analysis of SiC Power Semiconductor Packages using the Structure Function

2021 ◽  
Author(s):  
Salvatore Race ◽  
Ivana Kovacevic-Badstuebner ◽  
Michel Nagel ◽  
Thomas Ziemann ◽  
Shweta Tiwari ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Structure Function ◽  
Power Semiconductor ◽  
Semiconductor Packages

scholarly journals DESIGN AND TECHNOLOGICAL FEATURES OF CERAMIC-METAL TO-247 AND TO-220 SEMICONDUCTOR PACKAGES

2020 ◽  
Vol 257 (2) ◽  
pp. 22-27
Author(s):  
V.A. Sidorov ◽  
A.G. Chuprunov ◽  
S.V. Kataev ◽  
K.V. Sidorov
Keyword(s):  
Pulsed Current ◽  
Operating Voltage ◽  
Smart Power ◽  
Power Switches ◽  
Semiconductor Packages ◽  
Glass Metal

In this paper we introduce the design of sealed ceramic-metal TO-247 and TO-220 packages, which are intended for the same applications as plactic-metal and glass-metal alternatives. Packages could be used for epitaxial Si and SiC multi-die assemblies, for GaN smart power switches, etc., with operating voltage up to 2500 V and pulsed current up to 350 A.

scholarly journals Investigation on Die Crack in a Stacked Die Package Using Finite Element Analysis

2021 ◽  
pp. 83-91
Author(s):  
Jefferson Talledo
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Coefficient Of Thermal Expansion ◽  
Crack Problem ◽  
Element Analysis ◽  
Robust Solution ◽  
Die Attach ◽  
Die Stress ◽  
Cte Mismatch ◽  
Semiconductor Packages

Die crack is one of the problems in stacked die semiconductor packages. As silicon dies become thinner in such packages due to miniaturization requirement, the tendency to have die crack increases. This study presents the investigation done on a die crack issue in a stacked die package using finite element analysis (FEA). The die stress induced during the package assembly processes from die attach to package strip reflow was analyzed and compared with the actual die crack failure in terms of the location of maximum die stress at unit level as well as strip level. Stresses in the die due to coefficient of thermal expansion (CTE) mismatch of the package component materials and mechanical bending of the package in strip format were taken into consideration. Comparison of the die stress with actual die crack pointed to strip bending as the cause of the problem and not CTE mismatch. It was found that the die crack was not due to the thermal processes involved during package assembly. This study showed that analyzing die stress using FEA could help identify the root cause of a die crack problem during the stacked die package assembly and manufacturing as crack occurs at locations of maximum stress. The die crack mechanism can also be understood through FEA simulation and such understanding is very important in coming up with robust solution.

Analysis of Interface Cracking in Flip Chip Packages With Viscoplastic Solder Deformation

2003 ◽  
Author(s):  
M. J. Heffes ◽  
H. F. Nied
Keyword(s):  
Flip Chip ◽  
Strain Energy Release ◽  
Solder Material ◽  
Elastic Plastic ◽  
Linear Elastic ◽  
Interfacial Cracks ◽  
Fracture Parameters ◽  
Solder Bumps ◽  
Interface Cracking ◽  
Semiconductor Packages

This paper examines the modeling of viscoplastic solder behavior in the vicinity of interfacial cracking for flip chip semiconductor packages. Of particular interest is the relationship between viscoplastic deformation in the solder bumps and any possible interface cracking between the epoxy underfill layer and the silicon die. A 3-D finite element code, developed specifically for the study of interfacial fracture problems, was modified to study how viscoplastic solder material properties would affect fracture parameters such as strain energy release rate and phase angle for nearby interfacial cracks. Simplified two-layer periodic symmetry models were developed to investigate these interactions. Comparison of flip chip results using different solder material models showed that viscoplastic models yielded lower stress and fracture parameters than time independent elastic-plastic simulations. It was also found that adding second level attachment greatly increases the magnitude of the solder strain and fracture parameters. As expected, the viscoplastic and temperature dependent elastic-plastic results exhibited greater similarity to each other than results based solely on linear elastic properties.

Semi-additive Process Based Cu Wirings with Ultra Smooth Electroless Cu Seed Layer and Important Factor for High Frequency Transmission Property

2019 ◽  
Vol 2019 (1) ◽  
pp. 000409-000414
Author(s):  
Masaya Toba ◽  
Shuji Nomoto ◽  
Nobuhito Komuro ◽  
Kazuyuki Mitsukura ◽  
Shinichiro Abe ◽  
...  
Keyword(s):  
Seed Layer ◽  
High Performance ◽  
Printed Circuit Boards ◽  
Peel Strength ◽  
60 Ghz ◽  
Circuit Boards ◽  
Additive Process ◽  
Seed Formation ◽  
Anchoring Effect ◽  
Semiconductor Packages

Abstract Semiconductor packages for high performance devices with printed circuit boards having multi wiring layers such as FC-BGA have been attracting the attention in order to realize ultra-reliable and low latency communications in 5G networking. Cu wirings for the package are usually fabricated by via formation by laser for dielectric, desmear, electroless Cu seed formation, photoresist patterning, electrolytic Cu plating, resist stripping and seed layer etching. Though a desmear process can obtain enough adhesion between dielectric and Cu seed layer by anchoring effect to secure reliabilities, the interface between dielectric and Cu seed layer should be smooth to achieve low attenuation of electric signals at high frequencies. Here, instead of a desmear process, we applied an UV modification for the surface of dielectric in order to realize a smooth and high adhesive seed layer against dielectric. We obtained 0.8 kN/m of peel strength between dielectric and Cu seed layer in spite of surface roughness (Ra) of dielectric was 45 nm by nano-level anchoring effect at UV modified layer. Due to the smooth interface by UV modification, S21 value of microstrip line was 26 % improved compared to that assembled through desmear process at 60 GHz.

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