Cardiovascular implants and extracorporeal systems. Blood/tissue contact surface modifications for extracorporeal perfusion systems

Ultrastructural defects of ciliary structure have been known to cause recurrent sino-respiratory infection concurrent with Kartagener's syndrome. (1,2,3) These defects are also known to cause infertility in both males and females. (4) Overall, the defects are defined as the Immotile, or Dyskinetic Cilia Syndrome (DCS). Several ultrastructural findings have been described, including decreased number of cilia, multidirection orientation, fused and compound cilia, membrane blebs, excess matrix in the axoneme, missing outer tubular doublets, translocated doublets, defective radial spokes and dynein arms. A rare but noteworthy ultrastructural finding in DCS is the predominance of microvilli-like structures on the luminal surface of the respiratory epithelium. (5,6) These permanent surface modifications of the apical respiratory epithelium no longer resemble cilia but reflect the ultrastructure of stereocilia, similar to that found in the epidydimal epithelium. Like microvilli, stereocilia are devoid of microtubular ultrastructure in comparison with true cilia.

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Antithrombogenic surface modifications in xenogenic pericardial vascular grafts: Initial in-vivo evaluation

The Thoracic and Cardiovascular Surgeon ◽

10.1055/s-0030-1269233 ◽

2011 ◽

Vol 59 (S 01) ◽

Author(s):

J Linneweber ◽

F Voss ◽

P Dohmen ◽

W Erdbrügger ◽

W Konertz

Keyword(s):

Vascular Grafts ◽

Surface Modifications ◽

In Vivo Evaluation

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Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

MRS Proceedings ◽

10.1557/proc-223-389 ◽

1991 ◽

Vol 223 ◽

Author(s):

Neeta Agrawal ◽

R. D. Tarey ◽

K. L. Chopra

Keyword(s):

Etch Rate ◽

Argon Plasma ◽

Surface Modifications ◽

Surface Chemical ◽

Plasma Exposure ◽

X Ray ◽

Aluminium Fluoride ◽

A New Technique ◽

Plasma Exposure Time ◽

Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

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