Aeronautical ground lighting electrical installation. Constant current regulator. Equipment specifications and tests

2015 ◽  
Keyword(s):  
Constant Current ◽  
Electrical Installation

Scanning tunneling microscopy of polymers: A status report

1989 ◽  
Vol 47 ◽  
pp. 330-331
Author(s):  
P.E. Russell ◽  
I.H. Musselman
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Sample Surface ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Status Report ◽  
Tunneling Microscopy ◽  
Research Issues ◽  
Wide Range

Scanning tunneling microscopy (STM) has evolved rapidly in the past few years. Major developments have occurred in instrumentation, theory, and in a wide range of applications. In this paper, an overview of the application of STM and related techniques to polymers will be given, followed by a discussion of current research issues and prospects for future developments. The application of STM to polymers can be conveniently divided into the following subject areas: atomic scale imaging of uncoated polymer structures; topographic imaging and metrology of man-made polymer structures; and modification of polymer structures. Since many polymers are poor electrical conductors and hence unsuitable for use as a tunneling electrode, the related atomic force microscopy (AFM) technique which is capable of imaging both conductors and insulators has also been applied to polymers.The STM is well known for its high resolution capabilities in the x, y and z axes (Å in x andy and sub-Å in z). In addition to high resolution capabilities, the STM technique provides true three dimensional information in the constant current mode. In this mode, the STM tip is held at a fixed tunneling current (and a fixed bias voltage) and hence a fixed height above the sample surface while scanning across the sample surface.

Cerebellopontine Angle Surgery Assisted by Continuous Mapping of the Facial Nerve Via the Ultrasonic Aspirator

2020 ◽  
Author(s):  
Marco Cenzato ◽  
Roberto Stefini ◽  
Francesco Zenga ◽  
Maurizio Piparo ◽  
Alberto Debernardi ◽  
...  
Keyword(s):  
Electrical Stimulation ◽  
Facial Nerve ◽  
Cerebellopontine Angle ◽  
Continuous Mapping ◽  
Cost Effective ◽  
Current Intensity ◽  
Vestibular Schwannomas ◽  
Constant Current ◽  
Surgical Workflow ◽  
Ultrasonic Aspirator

Abstract Background Cerebellopontine angle (CPA) surgery carries the risk of lesioning the facial nerve. The goal of preserving the integrity of the facial nerve is usually pursued with intermittent electrical stimulation using a handheld probe that is alternated with the resection. We report our experience with continuous electrical stimulation delivered via the ultrasonic aspirator (UA) used for the resection of a series of vestibular schwannomas. Methods A total of 17 patients with vestibular schwannomas, operated on between 2010 and 2018, were included in this study. A constant-current stimulator was coupled to the UA used for the resection, delivering square-wave pulses throughout the resection. The muscle responses from upper and lower face muscles triggered by the electrical stimulation were displayed continuously on multichannel neurophysiologic equipment. The careful titration of the electrical stimulation delivered through the UA while tapering the current intensity with the progression of the resection was used as the main strategy. Results All operations were performed successfully, and facial nerve conduction was maintained in all patients except one, in whom a permanent lesion of the facial nerve followed a miscommunication to the neurosurgeon. Conclusion The coupling of the electrical stimulation to the UA provided the neurosurgeon with an efficient and cost-effective tool and allowed a safe resection. Positive responses were obtained from the facial muscles with low current intensity (lowest intensity: 0.1 mA). The availability of a resection tool paired with a stimulator allowed the surgeon to improve the surgical workflow because fewer interruptions were necessary to stimulate the facial nerve via a handheld probe.

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

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