scholarly journals High temperature studies of thin film Aluminum Nitride and piezoelectric characterization of mesa structures

2009 ◽  
Author(s):  
Richard Farrell
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Aluminum Nitride

High temperature characterization of PZT(0.52/0.48) thin-film pressure sensors

2013 ◽  
Vol 24 (1) ◽  
pp. 015017 ◽  
Author(s):  
M Asadnia ◽  
A G P Kottapalli ◽  
J M Miao ◽  
A B Randles ◽  
A Sabbagh ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Pressure Sensors ◽  
Film Pressure

Characterization of a nanocrystalline NiTiHf high temperature shape memory alloy thin film

2005 ◽  
Vol 52 (10) ◽  
pp. 983-987 ◽  
Author(s):  
Yunxiang Tong ◽  
Yong Liu ◽  
Jianmin Miao ◽  
Liancheng Zhao
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Alloy Thin Film

High Frequency Characterization of High Temperature Superconducting Thin-Film Lines

1991 ◽  
Vol 11 (2) ◽  
pp. 255-268 ◽  
Author(s):  
T. E. van Deventer ◽  
P. B. Katehi ◽  
J. Y. Josefowicz ◽  
D. B. Rensch
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
High Frequency ◽  
Superconducting Thin Film ◽  
High Temperature Superconducting

scholarly journals Development of a High-Density Piezoelectric Micromachined Ultrasonic Transducer Array Based on Patterned Aluminum Nitride Thin Film

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 623 ◽  
Author(s):  
Eunjung Shin ◽  
Hong Goo Yeo ◽  
Ara Yeon ◽  
Changzhu Jin ◽  
Wonki Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Resonant Frequency ◽  
Fill Factor ◽  
Ultrasonic Transducer ◽  
Peak Displacement ◽  
Biomedical Sensing ◽  
Potential Applications ◽  
Pressure Output

This study presents the fabrication and characterization of a piezoelectric micromachined ultrasonic transducer (pMUT; radius: 40 µm) using a patterned aluminum nitride (AlN) thin film as the active piezoelectric material. A 20 × 20 array of pMUTs using a 1 µm thick AlN thin film was designed and fabricated on a 2 × 2 mm2 footprint for a high fill factor. Based on the electrical impedance and phase of the pMUT array, the electromechanical coefficient was ~1.7% at the average resonant frequency of 2.82 MHz in air. Dynamic displacement of the pMUT surface was characterized by scanning laser Doppler vibrometry. The pressure output while immersed in water was 19.79 kPa when calculated based on the peak displacement at the resonant frequency. The proposed AlN pMUT array has potential applications in biomedical sensing for healthcare, medical imaging, and biometrics.

Preparation and Characterization of Novel Lithium Tantalate Target

2011 ◽  
Vol 117-119 ◽  
pp. 840-844
Author(s):  
Xu Yong Wu ◽  
De Yin Zhang ◽  
Kun Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Ion Beam ◽  
Sol Gel ◽  
Lithium Tantalate ◽  
Lithium Oxide ◽  
The Novel ◽  
Sol Gel Process

The novel lithium enriched lithium tantalate (LiTaO3) targets were papered by employing the sol-gel process and the high temperature sintered process. The sol of LiTaO3 was firstly prepared through reacting lithium ethoxide with tantalum ethoxide. The LiTaO3 powder was fabricated by presintered LiTaO3 dry gel 4 hour, at 800°C. The 11cm13cm1cm lithium enriched LiTaO3 target samples were prepared by sintered the pressed LiTaO3 powder billet 4 hour in the 850°C muffle furnace. The density of the 5% overdose lithium enriched LiTaO3 target is measured 5.96g/cm3. The XRD measured results show that the ion beam enhanced deposited (IBED) thin film samples using the prepared 5% overdose lithium enriched LiTaO3 target have the polycrystal structure of LiTaO3, but there has remanent Ta2O5 existed in the IBED thin film samples. The main reason for the remanent Ta2O5 growth was due to the stoichiometric proportion mismatch between Li and Ta in the IBED thin film samples during the high temperature annealed process, which caused the lithium oxide evaporation loss from the IBED thin film samples and made the proportion of Ta2O5 increase. After multipule repeated target prepared experiments, the 8.76% overdose lithium enriched LiTaO3 target is suitable for fabricating the 550°C annealed IBED LiTaO3 thin film. After the repeated process experiments, the suitable deposited process parameters of the IBED-C600M instrument for the 8.76% overdose lithium enriched LiTaO3 target were obtained. The SEM micrographs of the 550°C annealed IBED LiTaO3 thin films prepared by the 8.76% overdose lithium enriched LiTaO3 target reveal the prepared thin films are uniform, smooth and crack-free on the surface, and the perfect adhesion between the thin film and the substrate. The successfully fabricated LiTaO3 thin film samples verify the prepared processes of novel LiTaO3 sputtering target are effective.

Characterization of a high temperature superconducting oxide thin-film RF SQUID

1989 ◽  
Vol 25 (2) ◽  
pp. 1305-1308 ◽  
Author(s):  
K.P. Daly ◽  
A.H. Silver ◽  
R.W. Simon ◽  
C.E. Platt ◽  
A.E. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Oxide Thin Film ◽  
High Temperature Superconducting ◽  
Rf Squid
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