scholarly journals Wideband Mixed Signal Separation Based on Photonic Signal Processing

Telecom ◽  
2021 ◽  
Vol 2 (4) ◽  
pp. 413-429
Author(s):  
Yang Qi ◽  
Taichu Shi ◽  
Ben Wu

The growing needs for high-speed and secure communications create an increasing challenge to the contemporary framework of signal processing. The coexistence of multiple high-speed wireless communication systems generates wideband interference. To protect the security and especially the privacy of users’ communications requires stealth communication that hides and recovers private information against eavesdropping attacks. The major problem in interference management and stealth information recovery is to separate the signal of interest from wideband interference/noise. However, the increasing signal bandwidth presents a real challenge to existing capabilities in separating the mixed signal and results in unacceptable latency. The photonic circuit processes a signal in an analog way with a unanimous frequency response over GHz bandwidth. The digital processor measures the statistical patterns of the signals with sampling rate orders of magnitude smaller than the Nyquist frequency. Under-sampling the signals significantly reduces the workload of the digital processor while providing accurate control of the photonic circuit to perform the real-time signal separations. The wideband mixed signal separation, based on photonic signal processing is scalable to multiple stages with the performance of each stage accrued.

2006 ◽  
Vol 16 (02) ◽  
pp. 723-732 ◽  
Author(s):  
JINMAN YANG ◽  
ASHA BALIJEPALLI ◽  
TREVOR J. THORNTON ◽  
JAMES VANDERSAND ◽  
BENJAMIN J. BLALOCK ◽  
...  

Metal Semiconductor Field Effect Transistors fabricated using compound semiconductor materials have important applications in high-speed/low-noise communication systems. However, their integration densities are low compared to silicon technologies, and it is difficult to combine them with conventional CMOS for single-chip, mixed-signal circuit applications. In this paper we describe how silicon-on-insulator MESFETs can be fabricated alongside conventional MOSFETs using a commercially available silicon-on-insulator foundry. The process flow for the integrated MOSFETS and MESFETs is presented. Measurements from MESFETs fabricated using a commercial foundry demonstrate good depletion-mode device operation. The measured data confirms a square-law behavior for the saturated drain current, which can be reproduced using readily available MESFET models for Spice circuit simulation. The Spice model is applied to a simple differential-pair amplifier and the modeled results compared to measured data.


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