scholarly journals An Improved Near-field Magnetic Probe Radiation Profile Boundaries Assessment for Optimal Radiated Susceptibility Pre-Mapping

Symmetry ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1063
Author(s):  
Audrius Merfeldas ◽  
Pranas Kuzas ◽  
Darius Gailius ◽  
Zilvinas Nakutis ◽  
Mindaugas Knyva ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Near Field ◽  
Susceptibility Mapping ◽  
Circuit Board ◽  
Susceptibility Map ◽  
Absolute Maximum ◽  
Reference Map ◽  
Power Radiation ◽  
Radiation Profile

In this paper, the near-field radiated susceptibility pre-mapping method is proposed using the improved near-field probe power radiation profile assessment. The modelling of the electromagnetic field strength in 80–3000 MHz range in the proximity of the near-field probe was performed. The −6 dB aperture boundaries of the near-field probe and their variation, due to the proximity of the radio frequency (RF) printed circuit board (PCB) components, were determined, while the aperture map distortion, arising from the proximity of the passive RF PCB components were evaluated. The scanning path requirements for the RF susceptibility mapping were determined. The simulation of improved near-field probe absolute magnetic field strength reference map in open-air conditions is carried out in this work. The comparative analysis using the absolute maximum difference metric of orthogonal absolute magnetic field map cross-sections between the reference map and magnetic field maps affected by the proximity of the components was carried out. The experimental study of the RF amplifier stage susceptibility map with susceptibility mapping measurement results are presented in this work.

scholarly journals Design and Study of a Wide-Band Printed Circuit Board Near-Field Probe

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2201 ◽  
Author(s):  
Pedro A. Martinez ◽  
Enrique A. Navarro ◽  
Jorge Victoria ◽  
Adrian Suarez ◽  
Jose Torres ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electromagnetic Interference ◽  
Printed Circuit Board ◽  
Transmission Loss ◽  
Near Field ◽  
Fem Simulation ◽  
Numerical Results ◽  
Circuit Board ◽  
Frequency Range ◽  
Printed Circuit

Magnetic near-field probes (NFP) represent a suitable tool to measure the magnetic field level from a small electromagnetic interference (EMI) source. This kind of antenna is useful as a magnetic field probe for pre-compliance EMC measurements or debugging tasks since the user can scan a printed circuit board (PCB) looking for locations with strong magnetic fields. When a strong H-field point is found, the designer should check the PCB layout and components placement in that area to detect if this could result in an EMI source. This contribution focuses on analyzing the performance of an easy to build and low-cost H-field NFP designed and manufactured using a standard PCB stack-up. Thereby, the frequency range and sensitivity of the NFP-PCB are analyzed through a Finite Element Method (FEM) simulation model that makes it possible to evaluate its sensibility and effective frequency range. The numerical results obtained with the FEM models are validated against measurements to verify the design and performance of our NFP. The FEM model reproduces the experimental procedure, which is used to evaluate the performance of the NFP in terms of sensitivity by means of the simulated near-field distribution. The NFP-PCB has almost a flat response from 180 MHz to 6 GHz, with an almost perfect concordance between numerical and experimental S21 results. The numerical results show an average transmission loss of −27.9 dB by considering the flat response bandwidth, whereas the experimental one is −29.7 dB. Finally, the designed NFP is compared to two high-quality commercial probes in order to analyze its performance.

On the Configuration of the Magnetic Field of β CrB

1976 ◽  
Vol 32 ◽  
pp. 613-622
Author(s):  
I.A. Aslanov ◽  
Yu.S. Rustamov
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Radial Velocity ◽  
Magnetic Field Strength ◽  
Complex Shape ◽  
Rotation Period ◽  
Field Variation ◽  
Magnetic Field Variation ◽  
Secular Variations ◽  
The Magnetic Field

SummaryMeasurements of the radial velocities and magnetic field strength of β CrB were carried out. It is shown that there is a variability with the rotation period different for various elements. The curve of the magnetic field variation measured from lines of 5 different elements: FeI, CrI, CrII, TiII, ScII and CaI has a complex shape specific for each element. This may be due to the presence of magnetic spots on the stellar surface. A comparison with the radial velocity curves suggests the presence of a least 4 spots of Ti and Cr coinciding with magnetic spots. A change of the magnetic field with optical depth is shown. The curve of the Heffvariation with the rotation period is given. A possibility of secular variations of the magnetic field is shown.

2D analysis of magnetic field strength in GO SiFe steel sheets

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-579-Pr2-582 ◽  
Author(s):  
S. Tumanski ◽  
M. Stabrowski
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Steel Sheets

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

Magnetic Emission Mapping for Passive Integrated Components Characterisation

2003 ◽  
Author(s):  
O. Crépel ◽  
Y. Bouttement ◽  
P. Descamps ◽  
C. Goupil ◽  
P. Perdu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Mobile Phone ◽  
Printed Circuit Board ◽  
Magnetic Sensors ◽  
Circuit Board ◽  
Magnetic Disturbance ◽  
Passive Components ◽  
Printed Circuit ◽  
Integrated Inductor ◽  
The Magnetic Field

Abstract We developed a system and a method to characterize the magnetic field induced by circuit board and electronic component, especially integrated inductor, with magnetic sensors. The different magnetic sensors are presented and several applications using this method are discussed. Particularly, in several semiconductor applications (e.g. Mobile phone), active dies are integrated with passive components. To minimize magnetic disturbance, arbitrary margin distances are used. We present a system to characterize precisely the magnetic emission to insure that the margin is sufficient and to reduce the size of the printed circuit board.

Magnetic field strength dependence of chemical shift artifacts

1988 ◽  
Vol 12 (2) ◽  
pp. 89-96 ◽  
Author(s):  
R. Lufkin ◽  
M. Anselmo ◽  
J. Crues ◽  
W. Smoker ◽  
W. Hanafee
Keyword(s):  
Magnetic Field ◽  
Chemical Shift ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Strength Dependence
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