scholarly journals Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain

Symmetry ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 624
Author(s):  
Anquan Wu ◽  
Bin Liang ◽  
Yaqing Chi ◽  
Zhenyu Wu
Keyword(s):  
Integrated Circuits ◽  
Heavy Ions ◽  
Heavy Ion ◽  
High Energy ◽  
Advanced Technology ◽  
Sensitive Volume ◽  
Single Event ◽  
Space Applications ◽  
Order Of Magnitude ◽  
28 Nm

The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of soft errors in space applications. The SET caused by heavy ions in the 28 nm bulk silicon inverter chains was studied. A test chip with good symmetry layout design was fabricated based on the 28 nm process, and the chip was struck by using 5 kinds of heavy ions with different linear energy transfer (LET) values on heavy-ion accelerator. The research results show that in advanced technology, smaller sensitive volume makes SET cross-section measured at 28 nm smaller than 65 nm by an order of magnitude, the lower critical charge required to generate SET will increase the reliability threat of low-energy ions to the circuit, and high-energy ions are more likely to cause single-event multiple transient (SEMT), which cannot be ignored in practical circuits. The transients pulse width data can be used as a reference for SET modeling in complex circuits.

scholarly journals SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Radiation Effects ◽  
Large Scale ◽  
Random Access ◽  
Radiation Sensitivity ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment ◽  
Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

scholarly journals TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Electronics ◽  
2018 ◽  
Vol 7 (7) ◽  
pp. 112 ◽  
Author(s):  
Wenchao Tian ◽  
Tianran Ma ◽  
Xiaohan Liu
Keyword(s):  
Integrated Circuits ◽  
Research Methods ◽  
Heavy Ions ◽  
High Performance ◽  
Ion Irradiation ◽  
Low Cost ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment

Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.

scholarly journals High energy heavy ion jets emerging from laser plasma generated by long pulse laser beams from the NHELIX laser system at GSI

2005 ◽  
Vol 23 (4) ◽  
pp. 503-512 ◽  
Author(s):  
G. SCHAUMANN ◽  
M.S. SCHOLLMEIER ◽  
G. RODRIGUEZ-PRIETO ◽  
A. BLAZEVIC ◽  
E. BRAMBRINK ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Laser Energy ◽  
Laser System ◽  
Heavy Ion ◽  
Spot Size ◽  
High Energy ◽  
Focal Spot Size ◽  
Laser Systems ◽  
Order Of Magnitude ◽  
Long Pulse

High energy heavy ions were generated in laser produced plasma at moderate laser energy, with a large focal spot size of 0.5 mm diameter. The laser beam was provided by the 10 GW GSI-NHELIX laser systems, and the ions were observed spectroscopically in status nascendi with high spatial and spectral resolution. Due to the focal geometry, plasma jet was formed, containing high energy heavy ions. The velocity distribution was measured via an observation of Doppler shifted characteristic transition lines. The observed energy of up to 3 MeV of F-ions deviates by an order of magnitude from the well-known Gitomer (Gitomer et al., 1986) scaling, and agrees with the higher energies of relativistic self focusing.

scholarly journals The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Symmetry ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 154 ◽  
Author(s):  
Jizuo Zhang ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
Shouping Li ◽  
Liang Fang
Keyword(s):  
Integrated Circuit ◽  
Semiconductor Device ◽  
Transient State ◽  
Heavy Ion ◽  
Sensitive Volume ◽  
Substrate Noise ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient ◽  
Cosmic Particle

In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET.

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

scholarly journals Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Aerospace ◽  
2020 ◽  
Vol 7 (2) ◽  
pp. 12 ◽  
Author(s):  
Ygor Q. Aguiar ◽  
Frédéric Wrobel ◽  
Jean-Luc Autran ◽  
Paul Leroux ◽  
Frédéric Saigné ◽  
...  
Keyword(s):  
System Integration ◽  
Space Station ◽  
Vlsi Circuits ◽  
Advanced Technology ◽  
Combinational Circuits ◽  
Single Event ◽  
Single Event Transient ◽  
Space Applications ◽  
Predictive Assessment ◽  
Technology Nodes

Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects. However, the importance of considering SET in Very-Large-System-Integration (VLSI) circuits increases given the reduction of the transistor dimensions and the logic data path depth in advanced technology nodes. Accordingly, the threat of SET in electronics systems for space applications must be carefully addressed along with the SEU characterization. In this work, a systematic prediction methodology to assess and improve the SET immunity of digital circuits is presented. Further, the applicability to full-custom and cell-based design methodologies are discussed, and an analysis based on signal probability and pin assignment is proposed to achieve a more application-efficient SET-aware optimization of synthesized circuits. For instance, a SET-aware pin assignment can provide a reduction of 37% and 16% on the SET rate of a NOR gate for a Geostationary Orbit (GEO) and the International Space Station (ISS) orbit, respectively.

scholarly journals Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

2007 ◽  
Vol 54 (6) ◽  
pp. 2303-2311 ◽  
Author(s):  
P. E. Dodd ◽  
J. R. Schwank ◽  
M. R. Shaneyfelt ◽  
J. A. Felix ◽  
P. Paillet ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy ◽  
Nuclear Interactions

Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

2018 ◽  
Vol 65 (2) ◽  
pp. 712-718 ◽  
Author(s):  
J. M. Trippe ◽  
R. A. Reed ◽  
R. A. Austin ◽  
B. D. Sierawski ◽  
L. W. Massengill ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Sensitive Volume ◽  
Volume Model ◽  
28 Nm
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