scholarly journals In-Situ Plasma Monitoring during the Pulsed Laser Deposition of Ni60Ti40 Thin Films

Symmetry ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 109
Author(s):  
Nicanor Cimpoesu ◽  
Silviu Gurlui ◽  
Georgiana Bulai ◽  
Ramona Cimpoesu ◽  
Viorel-Puiu Paun ◽  
...  
Keyword(s):  
Thin Films ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Fractal Model ◽  
Global Dynamics ◽  
Solid State Transformation ◽  
Plasma Monitoring

The properties of pulsed laser deposited of Ni60Ti40 shape memory thin films generated in various deposition conditions were investigated. In-situ plasma monitoring was implemented by means of space- and time-resolved optical emission spectroscopy, and ICCD fast camera imaging. Structural and chemical analyses were performed on the thin films using SEM, AFM, EDS, and XRD equipment. The deposition parameters influence on the chemical composition of the thin films was investigated. The peeled layer presented on DSC a solid-state transformation in a different transformation domain compared to the target properties. A fractal model was used to describe the dynamics of laser produced plasma through various non-differentiable functionalities. Through hydrodynamic type regimes, space-time homographic transformations were correlated with the global dynamics of the ablation plasmas. Spatial simultaneity of homographic transformation through a special SL(2R) invariance implies the description of plasma dynamics through Riccati type equations, establishing correlations with the optical emission spectroscopy measurements.

In-situ plasma monitoring by optical emission spectroscopy during pulsed laser deposition of doped Lu2O3

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
S. Irimiciuc ◽  
J. More-Chevalier ◽  
S. Chertpalov ◽  
L. Fekete ◽  
M. Novotný ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Deposition ◽  
Plasma Monitoring

scholarly journals Machine Learning Prediction of Electron Density and Temperature from Optical Emission Spectroscopy in Nitrogen Plasma

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1221
Author(s):  
Jun-Hyoung Park ◽  
Ji-Ho Cho ◽  
Jung-Sik Yoon ◽  
Jung-Ho Song
Keyword(s):  
Machine Learning ◽  
Electron Temperature ◽  
Real Time ◽  
Electron Density ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Plasma Nitridation

We present a non-invasive approach for monitoring plasma parameters such as the electron temperature and density inside a radio-frequency (RF) plasma nitridation device using optical emission spectroscopy (OES) in conjunction with multivariate data analysis. Instead of relying on a theoretical model of the plasma emission to extract plasma parameters from the OES, an empirical correlation was established on the basis of simultaneous OES and other diagnostics. Additionally, we developed a machine learning (ML)-based virtual metrology model for real-time Te and ne monitoring in plasma nitridation processes using an in situ OES sensor. The results showed that the prediction accuracy of electron density was 97% and that of electron temperature was 90%. This method is especially useful in plasma processing because it provides in-situ and real-time analysis without disturbing the plasma or interfering with the process.

Manufacturable Large Area CdS Thin Films for Solar Cell Applications Monitored with Optical Emission Spectroscopy

1999 ◽  
Vol 569 ◽  
Author(s):  
L. Wang ◽  
I. Eisgruber ◽  
R. Hollingsworth ◽  
C. DeHart ◽  
T. Wangensteen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Deposition Rate ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
High Efficiency ◽  
Accurate Determination ◽  
Complex Function ◽  
Optical Emission ◽  
Cds Thin Films

ABSTRACTManufacturable, sputtered, device-quality, CdS thin films are reported for high efficiency solar cell applications. The sputtering plasma is monitored during deposition using optical emission spectroscopy. Optical emission spectroscopy (OES) is commonly used as an end point detector in plasma etching processes, where the disappearance of the etch product wavelength signature provides an unambiguous indication of completion. OES is only now beginning to be examined for controlling deposition processes, primarily because the dependence between OES signal and film properties can frequently be a quite complex function of the electron and gas densities, the emitting species concentration, the electron impact excitation cross section, the electron energy distribution function, and the probability of inelastic collisions between plasma species. OES monitoring during CdS sputtering allows accurate determination of deposition rate. Both Cd and S emission peaks can be identified, allowing tracking of the results of preferential sputtering. The OES output has been tied directly into the chamber controls, resulting in automatic closed-loop control of deposition rate. The resulting CdS films are device-quality and well-suited to large-scale manufacturing. A photovoltaic efficiency of 12.1 % was obtained from sputtered CdS on CIGS absorber, compared to 12.9% for the traditional, but less manufacturable, chemical bath deposited CdS on the same batch of CIGS. The sputtering technique has many advantages over other deposition techniques, such as easy scaleablity to large areas, simple process control, compatibility with in-line manufacturing of layered devices and low cost. RF, or lower-cost pulsed DC, sputtering power supplies can be used with comparable deposition rates. The structure, optical, and electrical properties of the sputtered CdS thin films have been characterized.

scholarly journals Quantitative Analysis of Thin Films by dc Arc Optical Emission Spectroscopy

1978 ◽  
Vol 32 (3) ◽  
pp. 281-287 ◽  
Author(s):  
Arnold W. Hogrefe ◽  
Robert K. Lowry
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Aluminum Film ◽  
Gravimetric Analysis ◽  
Mixed Powder ◽  
Nickel Chromium ◽  
Dc Arc

dc arc optical emission spectroscopy was investigated as a quantitative method for measuring compositions of thin films commonly used in fabricating semiconductor devices. Thin films studied were nickel-chromium, phosphorus-silicon dioxide, and silicon-aluminum. Film samples were obtained by direct deposition onto ordinary graphite electrodes mounted in vacuum deposition chambers. Standards for each film were prepared by evaporating series of synthetic solutions approximating film compositions onto electrode tips, or by preparing appropriately weighed mixed powder standards. Calibration curves were established by burning multiple sets of these standard electrodes in a 15-A dc arc and plotting the intensity ratios for selected atomic lines of the analyte elements. Correlation of emission results with atomic absorption, electron microprobe, and gravimetric analysis showed absolute agreement to within ±3% for nickel-chromium, ± 0.3% for phosphorus-silicon dioxide, and ±0.2% for silicon-aluminum. Maximum relative percent error was 5, 10, and 12.5%, respectively. This technique has proved to be a rapid convenient process control tool in the manufacture of microelectronic devices.

Correlation Between In Situ Optical Emission Spectroscopy in a Reactive O2 / AR RF Magnetron Sputtering Discharge and PZT Thin Film Composition

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Film Composition

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).

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