scholarly journals Electricity as a Cooking Means in Nepal—A Modelling Tool Approach

2018 ◽  
Vol 10 (8) ◽  
pp. 2841 ◽  
Author(s):  
Ramchandra Bhandari ◽  
Surendra Pandit
Keyword(s):  
Growth Rate ◽  
Energy Demand ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
Planning System ◽  
Liquefied Petroleum Gas ◽  
Fuel Switching ◽  
Cooking Energy ◽  
Business As Usual

Cooking energy has an important role in energy demand of Nepal. Over the last decade, import of Liquefied Petroleum Gas (LPG) has increased by 3.3 times as an alternate cooking fuel to kerosene and firewood. The growing subsidy burden to endorse modern fuel switching from traditional energy sources and high import of LPG are challenges for sustainability and energy security. This paper analyzes the future residential cooking energy demand and its environmental and economic impacts from 2015 to 2035 using a Long-range Energy Alternative Planning System (LEAP) tool. In 2035, the LPG demand for cooking is projected to be 26.5 million GJ, 16.3 million GJ, 45.2 million GJ and 58.2 million GJ for business as usual (BAU), low growth rate (LGR), medium growth rate (MGR) and high growth rate (HGR) scenarios, respectively. To substitute LPG with electricity in the cooking sector by 2035, an additional 1207 MW, 734 MW, 2055 MW and 2626 MW hydropower installation is required for BAU, LGR, MGR and HGR scenarios, respectively. In the MGR scenario, substituting LPG with electricity could save from $21.8 million (2016) to $70.8 million (2035) each year, which could be used to develop large-scale hydropower projects in the long term.

scholarly journals State Support for Shared Research Facilities: Any Results Yet?

2021 ◽  
Vol 16 (3) ◽  
pp. 416-440
Author(s):  
Kirill Kalyuzhnyi
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
The State ◽  
Ministry Of Education ◽  
Average Value ◽  
Monitoring Tools ◽  
Research Facilities

Introduction. The article is based on the findings collected by monitoring the Russian Сore Shared Research Facilities (CSRF) and Large-Scale Research Facilities (LSRF). The monitoring is carried out annually by RIEPL specialists on behalf of the Ministry of Education and Science of Russia. The author suggests that the CSRFs and LSRFs sponsored by the state under the federal target programme Research and Development in Priority Areas of Development in Science and Technology in Russia for 2014-2021 stand to deliver high performance across the key indicators, namely the number of external users, value of the work performed for their benefit, and actual workload on research equipment in the interests of external users. Monitoring Tools. The empirical basis of the study is the reporting data for 2014-2020, obtained from CSRFs and LSRFs representatives through the use of the web forms on the portal http://ckp-rf.ru. Results. In the group of sponsored CSRFs, the high growth rate in the number of external users and the average value of the work completed was due to the expansion of the range of services through the use of equipment purchased under the Federal Target Programme. The growth rate of the actual workload proved to be lower compared to the other groups. In the group of sponsored LSRFs, only the actual workload values showed some growth. The growth rate in the number of external users was lower compared to the non-sponsored facility group; the growth rate in the value of work performed did not change from the 2014 baseline. It is, therefore, concluded that there is a need to abandon the competitive financing of shared use infrastructure in favour of targeted financing. Conclusion. The results may be useful in assessing the state of the Russian research infrastructure and divising guidelines for its continued support.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shell Growth ◽  
Light Output ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Current Injection ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Plane Region

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.

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