scholarly journals Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Sensors ◽  
2021 ◽  
Vol 21 (23) ◽  
pp. 7907
Author(s):  
Michael Shur ◽  
Gregory Aizin ◽  
Taiichi Otsuji ◽  
Victor Ryzhii
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Waves ◽  
Mean Free Path ◽  
Thz Radiation ◽  
Data Traffic ◽  
Short Channel ◽  
Plasmonic Crystals ◽  
Ballistic Electron ◽  
Unit Cells

Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS). The ballistic and quasi-ballistic electron transport in the TeraFET channels determine the TeraFET response at the sub-THz and THz frequencies. TeraFET arrays could form plasmonic crystals with nanoscale unit cells smaller or comparable to the electron mean free path but with the overall dimensions comparable with the radiation wavelength. Such plasmonic crystals have a potential of supporting the transition to 6G communications. The oscillations of the electron density (plasma waves) in the FET channels determine the phase relations between the unit cells of a FET plasmonic crystal. Excited by the impinging radiation and rectified by the device nonlinearities, the plasma waves could detect both the radiation intensity and the phase enabling the line-of-sight terahertz (THz) detection, spectrometry, amplification, and generation for 6G communication.

Harmonic Responses In 2DEG AlGaAs/GaAs HEMT Devices Due To Plasma Wave Interactions

2012 ◽  
Author(s):  
Abdul Manaf Hashim ◽  
Seiya Kasai ◽  
Hideki Hasegawa
Keyword(s):  
Plasma Wave ◽  
Electron Mobility ◽  
Electromagnetic Waves ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistor ◽  
Plasma Waves ◽  
Thz Radiation ◽  
High Electron ◽  
Short Channel ◽  
High Electron Mobility

Gelombang plasma adalah ayunan kepadatan elektron dalam ruang masa, dan di dalam submikro transistor kesan medan, frekuensi plasma khas, ωp, terletak dalam julat terahertz (THz) dan tidak melibatkan peralihan kuantum. Maka, ayunan THz dapat dikesan dan/atau dihasilkan dengan menggunakan ransangan gelombang plasma. Dalam kertas kerja ini, dapat dikaji kaitan gelombang plasma antara penghantaran gelombang plasma dalam saluran pendek transistor pergerakan elektron tinggi (high–electron–mobility transistor – HEMT) dan yang terpancar dari gelombang elektromagnet. Berdasarkan ekperimen, kami telah membuktikan pengesanan radiasi terahertz (THz) oleh AlGaAs /GaAs HEMT hingga harmonik ketiga dalam suhu bilik dan hasil resonan bertepatan dengan hasil kiraan. Kata kunci: Gelombang permukaan plasma; plasma hanyut; peranti THz; GaAs; HEMT Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ωp, lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short–channel High–Electron–Mobility Transistor (HEMT) and that of the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results. Key words: Surface plasma waves; drift plasma; THz device, GaAs; HEMT

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

2021 ◽  
pp. 2109254
Author(s):  
Hai‐Yang Liu ◽  
Jun Yin ◽  
Xiangxiang Gao ◽  
Sanchuan Zhao ◽  
Gang Bian ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Short Channel

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

2012 ◽  
Vol 67 (6-7) ◽  
pp. 317-326 ◽  
Author(s):  
Alireza Heidari ◽  
Niloofar Heidari ◽  
Foad Khademi Jahromi ◽  
Roozbeh Amiri ◽  
Mohammadali Ghorbani
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Open Boundary ◽  
Double Gate ◽  
Short Channel Effects ◽  
Drain Voltage ◽  
Short Channel ◽  
Channel Effects ◽  
The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

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