scholarly journals BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 805
Author(s):  
Josep Altet ◽  
Enrique Barajas ◽  
Diego Mateo ◽  
Alexandre Billong ◽  
Xavier Aragones ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Radio Frequency ◽  
Power Amplifier ◽  
Temperature Sensor ◽  
Low Cost ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Ic Testing

A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.

An Enhanced Design of Multi-Band RF Band Pass Filter Based on Tunable High-Q Active Inductor for Nano-Satellite Applications

2016 ◽  
Vol 26 (04) ◽  
pp. 1750055 ◽  
Author(s):  
Aymen Ben Hammadi ◽  
Mongia Mhiri ◽  
Fayrouz Haddad ◽  
Sehmi Saad ◽  
Kamel Besbes
Keyword(s):  
Metal Oxide ◽  
Quality Factor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Active Inductor ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass ◽  
Multi Band

This paper describes the design of a novel cascode-grounded tunable active inductor and its application in an active band-pass filter (BPF) suitable for multi-band radio frequency (RF) front-end circuits. The proposed active inductor circuit uses feedback resistance to improve the equivalent inductance and the quality factor. The novelty of this work lies on the use of a few number of multi-finger transistors, which allows reducing strongly the power consumption and the silicon area. In other words, we demonstrate that the use of variable P-type Metal-Oxide-Semiconductor (PMOS) resistor and controllable current source have a good potential for wide tuning in terms of inductance value, quality factor and frequency operation. The RF BPF is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multi-band operation is achieved through control voltages. The designed active inductor and RF BPF have been implemented in a standard 0.13[Formula: see text][Formula: see text]m Complementary Metal Oxide Semiconductor (CMOS) technology. The simulation results are compared between schematic and post-layout design for inductance value, quality factor, transmission coefficient S21 and noise. This design yields encouraging results: the inductance value can be tuned from 10.94 to 44.17[Formula: see text]nH with an optimal quality factor around 2,581. In addition, the center frequency of the BPF can be tuned between 2 and 4.84[Formula: see text]GHz with an average insertion loss of [Formula: see text][Formula: see text]dB. Throughout this range, the noise figure is between 10.49 and 9.22[Formula: see text]dB with an input referred 1[Formula: see text]dB compression point of [Formula: see text][Formula: see text]dBm and IIP3 of 7.36[Formula: see text]dBm. The filter occupies 25.43[Formula: see text][Formula: see text]m of active area without pads and consumes between 2.38 and 2.84[Formula: see text]mW from a 1[Formula: see text]V supplying voltage.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Antiphase Method of the CMOS Power Amplifier Using PMOS Driver Stage to Enhance Linearity

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 103
Author(s):  
Jiwon Kim ◽  
Changhyun Lee ◽  
Jinho Yoo ◽  
Changkun Park
Keyword(s):  
Metal Oxide ◽  
Power Amplifier ◽  
Local Area Network ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Positive Sign ◽  
Common Source ◽  
Area Network ◽  
Power Added Efficiency ◽  
Power Stage

We present the possibility of a complementary metal-oxide semiconductor (CMOS) power amplifier (PA) using a driver stage composed of p-channel metal oxide semiconductor (PMOS) to enhance linearity. The PMOS driver stage is designed as a cascode structure to adapt the antiphase technique to the CMOS PA. By biasing the common-source transistor of the driver stage at the subthreshold region, we obtain a gm3 value with a positive sign to cancel out the negative gm3 of the power stage, thereby enhancing the linearity. We also investigate the effect of the bias of the cascode transistor of the driver stage on third-order intermodulation distortion and amplitude-to-phase distortion. Consequently, we show that the PMOS driver stage itself acts as a pre-distorter of the power stage. To verify the possibility of the PMOS driver stage and the proposed biasing method for the antiphase technique, we design a 2.42 GHz PA using a 180 nm RFCMOS process for wireless local area network applications. We obtain a measured maximum linear output power of 21.5 dBm with a 23.4% power-added efficiency and an error vector magnitude of 3.14%. We use an 802.11 n modulated signal with 64-quadrature amplitude modulation (QAM) (MCS7) at 65 Mb/s.

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