scholarly journals Cylindrical Shell Vibration Gyroscope Excited and Detected by High-Temperature-Sintered Piezoelectric Ceramic Electrodes

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 5972
Author(s):  
Tianliang Qu ◽  
Guanqing Zhou ◽  
Xiaoming Xue ◽  
Junhua Teng
Keyword(s):  
Cylindrical Shell ◽  
High Temperature ◽  
Piezoelectric Ceramic ◽  
Open Loop ◽  
Acoustic Excitation ◽  
Ceramic Electrodes ◽  
Core Components ◽  
Shell Vibration ◽  
Sintering Method ◽  
Piezoelectric Vibration

A cylindrical shell piezoelectric vibration gyroscope is a kind of Coriolis vibration gyroscope. Its core components are the cylindrical quartz resonator (CQR) and the piezoelectric ceramic electrodes (PCEs). In order to develop a high-precision Cylindrical shell piezoelectric vibration gyroscope, it is very important to reduce the influence of the PCEs and obtain a high-quality-factor CQR. To achieve this goal, a novel high-temperature sintering method is proposed to combine the CQR and the PCEs, and the corresponding sintered resonators are fabricated. After sintering, results of the acoustic excitation experiment and piezoelectric excitation experiment are tested, and the influence of the sintered PCEs on the CQR is determined. A complete gyroscope is obtained by vacuum packaging the sintered resonator. Through the open-loop and closed-loop tests, the performance parameters of gyroscope are obtained. The feasibility of the high-temperature sintering method is proved by experiments.

A High-Temperature Folded-Cascode Operational Transconductance Amplifier in 0.8-μm BCD-on-SOI

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000083-000088
Author(s):  
C. Su ◽  
B. J. Blalock ◽  
S. K. Islam ◽  
L. Zuo ◽  
L. M. Tolbert
Keyword(s):  
High Temperature ◽  
Analog Circuits ◽  
Flicker Noise ◽  
Data Converters ◽  
Open Loop ◽  
Automotive Electronics ◽  
Operational Transconductance Amplifier ◽  
Linear Regulator ◽  
Transconductance Amplifier ◽  
Folded Cascode

The rapid growth of the hybrid electric vehicles (HEVs) has been driving the demand of high temperature automotive electronics target for the engine compartment, power train, and brakes where the ambient temperature normally exceeds 150°C. An operational transconductance amplifier (OTA) is an essential building block of various analog circuits such as data converters, instrumentation systems, linear regulators, etc. This work presents a high temperature folded cascode operational transconductance amplifier designed and fabricated in a commercially available 0.8-μm BCD-on-SOI process. SOI processes offer several orders of magnitude smaller junction leakage current than bulk-CMOS processes at temperatures beyond 150°C. This amplifier is designed for a high temperature linear voltage regulator; the higher open-loop gain of this amplifier will enhance the overall performance of a linear regulator. In addition, the lower current consumption of the OTA is critical for improving the current efficiency of the linear regulator and reducing the power dissipation at elevated temperature. A PMOS input pair folded cascode OTA topology had been selected in this work, PMOS input pair offers wider ICMR (input common-mode range) and empirically lower flicker noise compared to its NMOS counterpart. By cascoding current mirror load at the output node, the folded cascode OTA obtains higher voltage gain than the symmetrical OTA topology. The PSRR (power supply rejection ratio) is also improved. A on-chip temperature stable current reference is employed to bias the amplifier. The amplifier consumes less than 65μA bias current at 175°C. The core layout area of the amplifier is 0.16mm2 (400 μm × 400 μm).

Development of a 300°C capable SiC based operational amplifier

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Open Loop ◽  
Common Source ◽  
Loop Gain ◽  
Long Term Stability ◽  
Silicon Silicon

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.

scholarly journals Sintered-Silver Bonding of High-Temperature Piezoelectric Ceramic Sensors

2017 ◽  
Vol 7 (1) ◽  
pp. 3-9 ◽  
Author(s):  
Justine Billore ◽  
Stanislas Hascoet ◽  
Remi Robutel ◽  
Cyril Buttay ◽  
Jianfeng Li
Keyword(s):  
High Temperature ◽  
Piezoelectric Ceramic ◽  
Sintered Silver
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