scholarly journals Photothermal Sensing of Nano-Devices Made of Graphene Materials

Sensors ◽  
2020 ◽  
Vol 20 (13) ◽  
pp. 3671
Author(s):  
Xiwen Lu ◽  
Lijun Yang ◽  
Zhan Yang
Keyword(s):  
Light Absorption ◽  
Carrier Mobility ◽  
Near Infrared ◽  
High Efficiency ◽  
Infrared Light ◽  
Thermal Heating ◽  
Electronic Components ◽  
Terahertz Band ◽  
Photoelectric Properties ◽  
Different Temperatures

Graphene is widely used as the basic materials of nano optical devices and sensors on account of its special structures and excellent photoelectric properties. Graphene is considered as an ideal material for photodetectors because of its ultra-wide absorption spectrum from the ultraviolet to the terahertz band, ultrahigh carrier mobility and ultrafast photoreaction speed. In this study, a photothermal nano-device was made using graphene that was transferred to an electrode using an all-dry viscoelastic stamping method. The nano-device has the advantages of simplicity, high efficiency and instant measurement. This nano-device was used to measure the light absorption of graphene, and the calculated light absorption rate of graphene is basically consistent with previous research results. Experiments on irradiation at different wavelengths and thermal heating at different temperatures show that the nano-device has an excellent response to near-infrared and mid-infrared light. The conclusions provide an experimental basis for the research, design and fabrication of nano-devices, and this device can provide an effective method for detecting light and temperature in areas such as electronic components and solar cells.

Near-Infrared Light Absorption Enhancement in Graphene Induced by the Tamm State in Optical Thin Films

2019 ◽  
Vol 39 (1) ◽  
pp. 0131001
Author(s):  
黎志文 Li Zhiwen ◽  
陆华 Lu Hua ◽  
李扬武 Li Yangwu ◽  
焦晗 Jiao Han ◽  
赵建林 Zhao Jianlin
Keyword(s):  
Thin Films ◽  
Light Absorption ◽  
Near Infrared ◽  
Infrared Light ◽  
Absorption Enhancement ◽  
Near Infrared Light ◽  
Tamm State

Tailored near-infrared-emitting colloidal heterostructured quantum dots with enhanced visible light absorption for high performance photoelectrochemical cells

2019 ◽  
Vol 7 (17) ◽  
pp. 10225-10230 ◽  
Author(s):  
Ali Imran Channa ◽  
Xin Tong ◽  
Jing-Yin Xu ◽  
Yongchen Liu ◽  
Changmeng Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Visible Light ◽  
Light Absorption ◽  
High Performance ◽  
Near Infrared ◽  
High Efficiency ◽  
Photoelectrochemical Cells ◽  
Visible Light Absorption ◽  
Cds Qds

Near-infrared-emitting CuGaS2/CdS QDs with enhanced visible light absorption were developed to achieve high efficiency photoelectrochemical cells.

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

2011 ◽  
Vol 287-290 ◽  
pp. 364-368 ◽  
Author(s):  
Yuan Li ◽  
Guo Jin Feng ◽  
Li Zhao
Keyword(s):  
Femtosecond Laser ◽  
Wavelength Range ◽  
Light Absorption ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Infrared Light ◽  
Structure Defects ◽  
Wide Wavelength Range ◽  
Different Temperatures ◽  
Tentative Explanation

The surface microstructured silicon prepared by femtosecond laser pulses irradiation in SF6shows significantly enhanced light absorption over a wide wavelength range. Absorptance of microstructured silicon is measured from 2 to 16μm, and the absorptance can up to 0.8 in the measured wavelength range. The absorptance of microstructured silicon increases as the height of spikes increases. Emissivity of microstructured silicon at different temperatures(100°C-400°C) is measured from 2.5μm to 25μm. Greatly enhanced emissivity compared to that of flat silicon was observed. At a certain temperature, with increasing the height of the spikes, the emissivity increases. For a sample with 13–14μm high spikes, the emissivity at a temperature of 100°C is approximately 0.96. A tentative explanation for the high absorptance of microstructured silicon has been carried out from three aspects: impurity states, structure defects and multiple reflection of light between spikes. The excellent properties of microstructured silicon make it a promising candidate for applications of infrared detectors, silicon solar cells, flat blackbody source and so on.

Liquid exfoliated biocompatible WS2@BSA nanosheets with enhanced theranostic capacity

2021 ◽  
Vol 9 (1) ◽  
pp. 148-156
Author(s):  
Haoyang Yi ◽  
Xinyue Zhou ◽  
Chaohui Zhou ◽  
Qingye Yang ◽  
Nengqin Jia
Keyword(s):  
Transition Metal ◽  
Specific Surface ◽  
Light Absorption ◽  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Absorption Capacity ◽  
Infrared Light ◽  
Large Specific Surface Area ◽  
Metal Dichalcogenides ◽  
Theranostic Agents

Ultrathin transition metal dichalcogenides (TMDs) seem to have a promising future in the field of theranostic agents due to their excellent near-infrared light absorption capacity and large specific surface area.

High-Efficiency, Blue, Green, and Near-Infrared Light-Emitting Diodes Based on Triple Cation Perovskite

2017 ◽  
Vol 5 (7) ◽  
pp. 1600920 ◽  
Author(s):  
Hyeong Pil Kim ◽  
Jeongmo Kim ◽  
Byung Soon Kim ◽  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting

Cs2NaVCl6: A Pb-Free Halide Double Perovskite with Strong Visible and Near-Infrared Light Absorption

2019 ◽  
Vol 11 (42) ◽  
pp. 38648-38653 ◽  
Author(s):  
Xiangrong Cao ◽  
Lei Kang ◽  
Shaoxing Guo ◽  
Minggang Zhang ◽  
Zheshuai Lin ◽  
...  
Keyword(s):  
Light Absorption ◽  
Near Infrared ◽  
Double Perovskite ◽  
Infrared Light ◽  
Near Infrared Light

A cyclopentadithiophene-bridged small molecule acceptor with near-infrared light absorption for efficient organic solar cells

2019 ◽  
Vol 7 (14) ◽  
pp. 4013-4019 ◽  
Author(s):  
Yuan-Qiu-Qiang Yi ◽  
Huanran Feng ◽  
Xin Ke ◽  
Jing Yan ◽  
Meijia Chang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Small Molecule ◽  
Organic Solar Cells ◽  
Light Absorption ◽  
Near Infrared ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Donor Acceptor

A cyclopentadithiophene (DTC)-bridged acceptor–donor–acceptor (A–D–A) backboned small molecule acceptor (SMA), namely IDTC-4Cl, was designed and synthesized.

Synthesis and photoelectric properties of SnSe films through selenization of evaporated Sn-metal films

2021 ◽  
pp. 2150382
Author(s):  
Shun Wang ◽  
Honglie Shen ◽  
Shusong Cui ◽  
Yufang Li
Keyword(s):  
Near Infrared ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Infrared Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Response Characteristics ◽  
Photoelectric Properties ◽  
Pure Phase ◽  
Large Application

Sn precursor layer was evaporated on a glass substrate by an electron-beam evaporation method and followed by selenization using Se powder. SnSe film was successfully prepared by adjusting the selenization temperature and selenization time. The phase, microstructure and optical properties of the SnSe films were studied by X-ray diffraction, Raman spectroscopy, Scanning Electron Microscopy, and UV-Vis-NIR spectrophotometer. The results demonstrated that the pure phase polycrystalline SnSe films with a band gap of 0.93 eV could be prepared by selenizing at 450[Formula: see text]C for 60 min. Under the irradiation of a 980 nm laser with a power of 2 mW/cm2, photoelectric response characteristics of the SnSe films were tested, and the response time and recovery time of the prepared film were 62 ms and 80 ms, respectively, indicating that the SnSe film had a large application prospect in near-infrared light detection.

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