scholarly journals Large Responsivity of Graphene Radiation Detectors with Thermoelectric Readout: Results of Simulations

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 1930
Author(s):  
August Yurgens
Keyword(s):  
Charge Carrier ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Charge Carrier Mobility ◽  
Radiation Detectors ◽  
Charge Carrier Density ◽  
Trade Off ◽  
Device Resistance ◽  
Receiving Antenna

Simple estimations show that the thermoelectric readout in graphene radiation detectors can be extremely effective even for graphene with modest charge-carrier mobility ∼1000 cm 2 /(Vs). The detector responsivity depends mostly on the residual charge-carrier density and split-gate spacing and can reach competitive values of ∼ 10 3 – 10 4 V/W at room temperature. The optimum characteristics depend on a trade-off between the responsivity and the total device resistance. Finding out the key parameters and their roles allows for simple detectors and their arrays, with high responsivity and sufficiently low resistance matching that of the radiation-receiving antenna structures.

scholarly journals Charge carrier mobility fluctuations due to the capture–emission process

2018 ◽  
Vol 58 (3) ◽  
Author(s):  
Vilius Palenskis ◽  
Juozas Vyšniauskas ◽  
Justinas Glemža ◽  
Jonas Matukas
Keyword(s):  
Charge Carrier ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Free Charge Carrier ◽  
Charge Carrier Mobility ◽  
Frequency Noise ◽  
Charge Carrier Density ◽  
Free Charge ◽  
Emission Process ◽  
Mobility Fluctuations

It is shown that the free charge carrier capture–emission process causes both the charge carrier density and mobility fluctuations. In this report we present the calculation results in order to find how the capture–emission process affects the free charge carrier mobility and mobility fluctuations. The carrier mobility dependence on phonon, impurity and carrier–carrier scatterings, and the mobility dependence on the electric field and the energy gap variation due to the doping level were taken into account. It is also shown that fluctuations of the charge carrier density and mobility due to the capture–emission process are completely correlated, and that their relaxation times are the same as for the charge capture–emission process. The general expression for estimation of active capture centre density in the volume of a homogeneous sample from the low-frequency noise measurements is presented.

Room-temperature discotic liquid-crystalline coronene diimides exhibiting high charge-carrier mobility in air

2009 ◽  
Vol 19 (37) ◽  
pp. 6688 ◽  
Author(s):  
Zesheng An ◽  
Junsheng Yu ◽  
Benoit Domercq ◽  
Simon C. Jones ◽  
Stephen Barlow ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Mobility ◽  
Liquid Crystalline ◽  
Room Temperature ◽  
Charge Carrier Mobility ◽  
High Charge ◽  
High Charge Carrier Mobility

Record Charge Carrier Mobility in a Room-Temperature Discotic Liquid-Crystalline Derivative of Hexabenzocoronene

1999 ◽  
Vol 11 (17) ◽  
pp. 1469-1472 ◽  
Author(s):  
A. M. van de Craats ◽  
J. M. Warman ◽  
A. Fechtenkötter ◽  
J. D. Brand ◽  
M. A. Harbison ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Mobility ◽  
Liquid Crystalline ◽  
Room Temperature ◽  
Charge Carrier Mobility

Sb2Te3 and Bi2Te3 Thin Films Grown by Molecular Beam Epitaxy at Room Temperature

2011 ◽  
Vol 1329 ◽  
Author(s):  
Z. Aabdin ◽  
M. Winkler ◽  
D. Bessas ◽  
J. König ◽  
N. Peranio ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Charge Carrier ◽  
Power Factor ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
Charge Carrier Mobility ◽  
X Ray

ABSTRACTNano-alloyed p-type Sb2Te3 and n-type Bi2Te3 thin films were grown on SiO2/Si and BaF2 substrates by molecular beam epitaxy (MBE) in two steps: (i) Repeated deposition of five-layer stacks with sequence Te-X-Te-X-Te (X = Sb or Bi) with elemental layer thicknesses of 0.2 nm on substrates at room temperature, (ii) annealing at 250 °C for two hours at which phase formation of Sb2Te3 or Bi2Te3 occurred. The room temperature MBE deposition method reduces surface roughness, allows the use of non lattice-matched substrates, and yields a more accurate and easier control of the Te content compared to Bi2Te3 thin films, which were epitaxially grown on BaF2 substrates at 290 °C. X-ray diffraction revealed that the thin films were single phase, poly-crystalline, and textured. The films showed grain sizes of 500 nm for Sb2Te3 and 250 nm for Bi2Te3, analyzed by transmission electron microscopy (TEM). The in-plane transport properties (thermopower S, electrical conductivity σ, charge carrier density n, charge carrier mobility μ, power factor S2σ) were measured at room temperature. The nano-alloyed Sb2Te3 thin film revealed a remarkably high power factor of 29 μW cm-1 K-2 similar to epitaxially grown Bi2Te3 thin films and Sb2Te3 single crystalline bulk materials. This large power factor can be attributed to a high charge carrier mobility of 402 cm2 V−1 s-1 similar to high-ZT Bi2Te3/Sb2Te3 superlattices. However, for the nano-alloyed Bi2Te3 thin film a low power factor of 8 μW cm−1 K-2 and a low charge carrier mobility of 80 cm2 V−1 s−1 were found. Detailed microstructure and phase analyses were carried out by energy-filtered TEM in cross-sections. Quantitative chemical analysis by energy-dispersive x−ray spectroscopy (EDS) was also applied. In Bi2Te3 thin films, few nanometer thick Bi-rich blocking layers at grain boundaries and Te fluctuations by 1.3 at.% within the grains were observed. The small charge carrier densities are explained by a reduced antisite defect density due to the low temperatures to which the thin films were exposed during annealing.

scholarly journals Charge transport in disordered organic field-effect transistors

2002 ◽  
Vol 725 ◽  
Author(s):  
Cristina Tanase ◽  
Paul W.M. Blom ◽  
Eduard J. Meijer ◽  
Dago M. de Leeuw
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Charge Carriers ◽  
Localized States ◽  
Charge Carrier Density ◽  
Organic Field Effect Transistors ◽  
Good Agreement

AbstractThe transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is dependent on the charge carrier density. The transfer characteristics of PTV FET have been modeled considering the distribution of charge carriers and mobility over the accumulation channel. Good agreement with the experimental data is obtained.

Proton intercalated two-dimensional WO3nano-flakes with enhanced charge-carrier mobility at room temperature

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 15029-15036 ◽  
Author(s):  
Serge Zhuiykov ◽  
Eugene Kats ◽  
Benjamin Carey ◽  
Sivacarendran Balendhran
Keyword(s):  
Charge Carrier ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Charge Carrier Mobility ◽  
Two Dimensional

The Influence of Nitrogen Position on Charge Carrier Mobility in Enantiopure Aza[6]helicene Crystals

2018 ◽  
Author(s):  
Francesco Salerno ◽  
Beth Rice ◽  
Julia Schmidt ◽  
Matthew J. Fuchter ◽  
Jenny Nelson ◽  
...  
Keyword(s):  
Solid State ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Chemical Structure ◽  
Crystal Packing ◽  
Charge Carrier Mobility ◽  
Individual Factor ◽  
Charge Mobility ◽  
Order Of Magnitude ◽  
Small Change

<p>The properties of an organic semiconductor are dependent on both the chemical structure of the molecule involved, and how it is arranged in the solid-state. It is challenging to extract the influence of each individual factor, as small changes in the molecular structure often dramatically change the crystal packing and hence solid-state structure. Here, we use calculations to explore the influence of the nitrogen position on the charge mobility of a chiral organic molecule when the crystal packing is kept constant. The transfer integrals for a series of enantiopure aza[6]helicene crystals sharing the same packing were analysed in order to identify the best supramolecular motifs to promote charge carrier mobility. The regioisomers considered differ only in the positioning of the nitrogen atom in the aromatic scaffold. The simulations showed that even this small change in the chemical structure has a strong effect on the charge transport in the crystal, leading to differences in charge mobility of up to one order of magnitude. Some aza[6]helicene isomers that were packed interlocked with each other showed high HOMO-HOMO integrals (up to 70 meV), whilst molecules arranged with translational symmetry generally afforded the highest LUMO-LUMO integrals (40 - 70 meV). As many of the results are not intuitively obvious, a computational approach provides additional insight into the design of new semiconducting organic materials.</p>

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

2011 ◽  
Author(s):  
Guillaume Celi ◽  
Sylvain Dudit ◽  
Thierry Parrassin ◽  
Philippe Perdu ◽  
Antoine Reverdy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Laser Beam ◽  
Integrated Circuit ◽  
Carrier Density ◽  
Deep Submicron ◽  
Charge Carrier Density ◽  
Voltage Imaging ◽  
A New Technique ◽  
Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

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