scholarly journals Fabrication of Si Micropore and Graphene Nanohole Structures by Focused Ion Beam

Sensors ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 1572
Author(s):  
Nik Noor Nabilah Md Ibrahim ◽  
Abdul Manaf Hashim
Keyword(s):  
Single Molecule ◽  
Focused Ion Beam ◽  
Deoxyribonucleic Acid ◽  
Ion Beam ◽  
Si Substrate ◽  
Device Structure ◽  
Fluidic Channel ◽  
Direct Fabrication ◽  
Transfer Method ◽  
Sensing Membrane

A biosensor formed by a combination of silicon (Si) micropore and graphene nanohole technology is expected to act as a promising device structure to interrogate single molecule biopolymers, such as deoxyribonucleic acid (DNA). This paper reports a novel technique of using a focused ion beam (FIB) as a tool for direct fabrication of both conical-shaped micropore in Si3N4/Si and a nanohole in graphene to act as a fluidic channel and sensing membrane, respectively. The thinning of thick Si substrate down to 50 µm has been performed prior to a multi-step milling of the conical-shaped micropore with final pore size of 3 µm. A transfer of graphene onto the fabricated conical-shaped micropore with little or no defect was successfully achieved using a newly developed all-dry transfer method. A circular shape graphene nanohole with diameter of about 30 nm was successfully obtained at beam exposure time of 0.1 s. This study opens a breakthrough in fabricating an integrated graphene nanohole and conical-shaped Si micropore structure for biosensor applications.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

ORGANIC SEMICONDUCTOR MICRO-PILLAR PROCESSED BY FOCUSED ION BEAM MILLING

2005 ◽  
Vol 03 (supp01) ◽  
pp. 223-228 ◽  
Author(s):  
WEN-CHANG HUNG ◽  
A. ADAWI ◽  
A. TAHRAOUI ◽  
A. G. CULLIS
Keyword(s):  
Quantum Dot ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Micro Machining ◽  
Single Photon Emission ◽  
Fabrication Procedure ◽  
Pillar Structure

In order to control light, different strategies have been applied by placing an optically active medium into a semiconductor resonator and certain applications such as LEDs and laser diodes have been commercialized for many years. The possibility of nanoscale optical applications has created great interesting for quantum nanostructure research. Recently, single photon emission has been an active area of quantum dot research. A quantum dot is place between distributed Bragg reflectors (DBRs) within a micro-pillar structure. In this study, we shall report on an active layer composed of an organic material instead of a semiconductor. The micro-pillar structure is fabricated by a focused ion beam (FIB) micro-machining technique. The ultimate target is to achieve a single molecule within the micro-pillar and therefore to enable single photon emission. Here, we demonstrate some results of the fabrication procedure of a 5 micron organic micro-pillar via the focused ion beam and some measurement results from this study. The JEOL 6500 dual column system equipped with both electron and ion beams enables us to observe the fabrication procedure during the milling process. Furthermore, the strategy of the FIB micro-machining method is reported as well.

Temperature dependent resistivity of platinum–carbon composite nanowires grown by focused ion beam on SiO2/Si substrate

2011 ◽  
Vol 88 (11) ◽  
pp. 3360-3364 ◽  
Author(s):  
Manotosh Chakravorty ◽  
K. Das ◽  
A.K. Raychaudhuri ◽  
J.P. Naik ◽  
P.D. Prewett
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Carbon Composite ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Temperature Dependent Resistivity

Microstructural Observation of Focused Ion Beam Modification of Ni Silicide/Si Thin Films

1996 ◽  
Vol 439 ◽  
Author(s):  
Miyoko Tanaka ◽  
Kazuo Furuya ◽  
Tetsuya Saito
Keyword(s):  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dark Field ◽  
In Situ Tem ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
Surrounding Matrix ◽  
Transmission Electron

AbstractFocused ion beam (FIB) irradiation of a thin Ni2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 μm were patterned at room temperature with a 25keV Ga+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling; sputtering of the Ni2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni2Si layer into an epitaxial NiSi2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the precipitation is indicated.

Shrinking Graphene Nanopore Using Electron-Beam-Induced Deposition for Single Molecule Detection

2015 ◽  
Author(s):  
Jian Ma ◽  
Weiwei Zhao ◽  
Lei Liu ◽  
Jingjie Sha ◽  
Yunfei Chen
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Solid State ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Molecule Detection ◽  
Large Size ◽  
Scanning Electron ◽  
Graphene Nanopore

Solid-state nanopore has already shown success of single molecule detection and graphene nanopore is potential for successful DNA sequencing. Here, we present a fast and controllable way to fabricate sub-5 nm nanopore on graphene membrane. The process includes two steps: sputtering a large size nanopore using a conventional focused ion beam (FIB) and shrinking the large nanopore to a few nanometers using scanning electron microscope (SEM). We also demonstrated the ability of the graphene nanopores fabricated in this manner to detect individual 48Kbp λ-DNA molecules.

Focused Ion Beam Milled Nanochannels for Confinement Enabled DNA Single-Molecule Studies

2012 ◽  
Vol 18 (S2) ◽  
pp. 606-607 ◽  
Author(s):  
L. Menard ◽  
J. Zhou ◽  
M. Woodson ◽  
C. Mair ◽  
J. Alarie ◽  
...  
Keyword(s):  
Single Molecule ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Molecule Studies

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Direct fabrication of nanopores in a metal foil using focused ion beam with in situ measurements of the penetrating ion beam current

2009 ◽  
Vol 80 (12) ◽  
pp. 125102 ◽  
Author(s):  
Kotaro Nagoshi ◽  
Junki Honda ◽  
Hiroyuki Sakaue ◽  
Takayuki Takahagi ◽  
Hitoshi Suzuki
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
In Situ Measurements ◽  
Metal Foil ◽  
Direct Fabrication
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