scholarly journals Tactile Image Sensors Employing Camera: A Review

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3933 ◽  
Author(s):  
Kazuhiro Shimonomura
Keyword(s):  
Image Sensor ◽  
Image Sensors ◽  
Physical Contact ◽  
Tactile Information ◽  
Conductive Plate ◽  
Image Analysis Algorithm ◽  
Tactile Image ◽  
Sensor Configuration ◽  
Displacement Based ◽  
Typical Design

A tactile image sensor employing a camera is capable of obtaining rich tactile information through image sequences with high spatial resolution. There have been many studies on the tactile image sensors from more than 30 years ago, and, recently, they have been applied in the field of robotics. Tactile image sensors can be classified into three typical categories according to the method of conversion from physical contact to light signals: Light conductive plate-based, marker displacement- based, and reflective membrane-based sensors. Other important elements of the sensor, such as the optical system, image sensor, and post-image analysis algorithm, have been developed. In this work, the literature is surveyed, and an overview of tactile image sensors employing a camera is provided with a focus on the sensing principle, typical design, and variation in the sensor configuration.

scholarly journals 1/f Noise Modelling and Characterization for CMOS Quanta Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5459
Author(s):  
Wei Deng ◽  
Eric R. Fossum
Keyword(s):  
Analog Circuits ◽  
Image Sensor ◽  
Image Sensors ◽  
Correlated Double Sampling ◽  
Cmos Image Sensors ◽  
Source Follower ◽  
Cmos Analog Circuits ◽  
Different Origins ◽  
Noise Models ◽  
Fitting Model

This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.

Influence of Transparent Electrodes on Image Sensor Performance

1985 ◽  
Vol 49 ◽  
Author(s):  
K. Kempter ◽  
H. Wieczrek ◽  
M. Hoheisel
Keyword(s):  
Response Times ◽  
Image Sensor ◽  
Image Sensors ◽  
Transparent Electrodes ◽  
Sensor Performance ◽  
Decay Times ◽  
Sensor Cell ◽  
Photocurrent Decay

AbstractThe short response times required for image sensors demand blocking contacts at the sensor cell. It was found that the junctions between transparent electrodes (ITO or a thin palladium film) and the metallic back electrode with a-Si:H form blocking contacts yielding photocurrent decay times of the order of some microseconds. The two different time regimes observed for the decay are interpreted as being limited by the drift and the release of holes respectively.

scholarly journals Development of Obstacle Recognition System of Humanoids Using Relative Disparity Maps from Small Range Image Sensors

2007 ◽  
Vol 19 (3) ◽  
pp. 290-297
Author(s):  
Naotaka Hikosaka ◽  
◽  
Kei Watanabe ◽  
Kazunori Umeda
Keyword(s):  
Recognition System ◽  
Image Sensor ◽  
Image Sensors ◽  
Easy Plane ◽  
Reference Plane ◽  
Small Range ◽  
Range Image ◽  
Disparity Maps ◽  
Integrated Controller

We discuss the recognition of obstacles by detecting a plane using relative disparity maps obtained from a small range image sensor incorporated in a humanoid. Our proposal enables easy plane detection and obstacle recognition using relative disparity from a reference plane alone. We built an integrated controller that feeds back obstacle information to the humanoid. We confirmed through experiments that the humanoid recognized obstacles and autonomously stopped walking.

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Super Field-of-View Lensless Camera by Coded Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1329 ◽  
Author(s):  
Tomoya Nakamura ◽  
Keiichiro Kagawa ◽  
Shiho Torashima ◽  
Masahiro Yamaguchi
Keyword(s):  
Imaging System ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Image Sensors ◽  
Computational Imaging ◽  
Field Of View ◽  
Oxide Semiconductor ◽  
Back Side ◽  
Cmos Image Sensors ◽  
Rich Information

A lensless camera is an ultra-thin computational-imaging system. Existing lensless cameras are based on the axial arrangement of an image sensor and a coding mask, and therefore, the back side of the image sensor cannot be captured. In this paper, we propose a lensless camera with a novel design that can capture the front and back sides simultaneously. The proposed camera is composed of multiple coded image sensors, which are complementary-metal-oxide-semiconductor (CMOS) image sensors in which air holes are randomly made at some pixels by drilling processing. When the sensors are placed facing each other, the object-side sensor works as a coding mask and the other works as a sparsified image sensor. The captured image is a sparse coded image, which can be decoded computationally by using compressive sensing-based image reconstruction. We verified the feasibility of the proposed lensless camera by simulations and experiments. The proposed thin lensless camera realized super-field-of-view imaging without lenses or coding masks and therefore can be used for rich information sensing in confined spaces. This work also suggests a new direction in the design of CMOS image sensors in the era of computational imaging.

A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors

2020 ◽  
Vol 2020 (7) ◽  
pp. 103-1-103-6
Author(s):  
Taesub Jung ◽  
Yonghun Kwon ◽  
Sungyoung Seo ◽  
Min-Sun Keel ◽  
Changkeun Lee ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Light Sensitivity ◽  
Image Sensor ◽  
Image Sensors ◽  
Double Sampling ◽  
Back Side ◽  
Long Distance ◽  
Correlated Double Sampling ◽  
Cmos Image Sensors ◽  
Side Illumination

An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process. 15000 e- of high full-well capacity (FWC) per a tap of 3.5 μm pitch and 3.6 e- of read-noise has been realized by employing true correlated double sampling (CDS) structure with storage gates (SGs). Noble characteristics such as 86 % of demodulation contrast (DC) at 100MHz operation, 37 % of higher quantum efficiency (QE) and lower parasitic light sensitivity (PLS) at 940 nm have been achieved. As a result, the proposed ToF sensor shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.

FPGA-based tactile image sensor

2019 ◽  
Vol 2019 (0) ◽  
pp. 2A2-H05
Author(s):  
Kouki UNNO ◽  
Kazuhiro SHIMONOMURA
Keyword(s):  
Image Sensor ◽  
Tactile Image

A Novel Segment-Based Data Transfer Scheme for Low-Power CMOS Surveillance Image Sensors

2017 ◽  
Vol 27 (02) ◽  
pp. 1850027
Author(s):  
Mehdi Habibi ◽  
Khatereh Akbari ◽  
Marzieh Mokhtari ◽  
Peyman Moallem
Keyword(s):  
Data Transfer ◽  
Cmos Technology ◽  
Image Sensor ◽  
Data Rate ◽  
Image Sensors ◽  
Solar Panels ◽  
Transfer Scheme ◽  
Data Rates ◽  
Low Power Cmos ◽  
The Given

Smart image sensors with low data rate output are well fitted for security and surveillance tasks, since at lower data rates, power consumption is reduced and the image sensor can be operated with limited energy resources such as solar panels. In this paper, a new data transfer scheme is presented to reduce the data rate of the pixels which have undergone value change. Although different pixel difference detecting architectures have been previously reported but it is shown that the given method is more effective in terms of power dissipation and data transfer rate reduction. The proposed architecture is evaluated as a [Formula: see text]-pixel sensor in a standard CMOS technology and comparison with other data transfer approaches is performed in the same process and configuration.

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