scholarly journals Two-Dimensional Graphene Family Material: Assembly, Biocompatibility and Sensors Applications

Sensors ◽  
2019 ◽  
Vol 19 (13) ◽  
pp. 2966 ◽  
Author(s):  
Xingying Zhang ◽  
Ying Wang ◽  
Gaoxing Luo ◽  
Malcolm Xing
Keyword(s):  
Field Effect ◽  
Electrochemical Sensors ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Two Dimensional ◽  
Sensing System ◽  
Thick Crystal ◽  
Mechanical Sensors ◽  
Graphene Family Materials ◽  
And Chemical Properties

Graphene and its chemically exfoliated derivatives—GO and rGO—are the key members of graphene family materials (GFM). The atomically thick crystal structure and the large continuous π conjugate of graphene imparts it with unique electrical, mechanical, optical, thermal, and chemical properties. Although those properties of GO and rGO are compromised, they have better scalability and chemical tunability. All GFMs can be subject to noncovalent modification due to the large basal plane. Besides, they have satisfying biocompatibility. Thus, GFMs are promising materials for biological, chemical and mechanical sensors. The present review summarizes how to incorporate GFMs into different sensing system including fluorescence aptamer-based sensors, field-effect transistors (FET), and electrochemical sensors, as well as, how to covalently and/or non-covalently modify GFMs to achieve various detection purpose. Sensing mechanisms and fabrication strategies that will influence the sensitivity of different sensing system are also reviewed.

scholarly journals Recent developments in carbon-based two-dimensional materials: synthesis and modification aspects for electrochemical sensors

2020 ◽  
Vol 187 (8) ◽  
Author(s):  
Eva-Maria Kirchner ◽  
Thomas Hirsch
Keyword(s):  
Carbon Materials ◽  
Electrochemical Sensors ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Wide Field ◽  
Two Dimensional ◽  
Sensing Applications ◽  
The Impact ◽  
Carbon Based

Abstract This review (162 references) focuses on two-dimensional carbon materials, which include graphene as well as its allotropes varying in size, number of layers, and defects, for their application in electrochemical sensors. Many preparation methods are known to yield two-dimensional carbon materials which are often simply addressed as graphene, but which show huge variations in their physical and chemical properties and therefore on their sensing performance. The first section briefly reviews the most promising as well as the latest achievements in graphene synthesis based on growth and delamination techniques, such as chemical vapor deposition, liquid phase exfoliation via sonication or mechanical forces, as well as oxidative procedures ranging from chemical to electrochemical exfoliation. Two-dimensional carbon materials are highly attractive to be integrated in a wide field of sensing applications. Here, graphene is examined as recognition layer in electrochemical sensors like field-effect transistors, chemiresistors, impedance-based devices as well as voltammetric and amperometric sensors. The sensor performance is evaluated from the material’s perspective of view and revealed the impact of structure and defects of the 2D carbon materials in different transducing technologies. It is concluded that the performance of 2D carbon-based sensors is strongly related to the preparation method in combination with the electrical transduction technique. Future perspectives address challenges to transfer 2D carbon-based sensors from the lab to the market.

scholarly journals Wafer-Scale Synthesis of Monolayer MoS2 and Their Field-Effect Transistors toward Practical Applications

2021 ◽  
Author(s):  
Yuchun Liu ◽  
Fuxing Gu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Dimensional Structure ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Promising Candidate ◽  
Practical Applications ◽  
Integrated Electronics ◽  
Considerable Research

Molybdenum disulfide (MoS2) have attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physic-chemical properties. However, it is still...

High-performance vertical field-effect transistors based on all-inorganic perovskite microplatelets

2020 ◽  
Vol 8 (36) ◽  
pp. 12632-12637 ◽  
Author(s):  
Jian Zhou ◽  
Lei Xie ◽  
Xiufeng Song ◽  
Ziming Wang ◽  
Chengxue Huo ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Vertical Field ◽  
Halide Perovskites ◽  
Vertical Field Effect ◽  
Physical And Chemical ◽  
And Chemical Properties

All-inorganic halide perovskites have made significant achievements in electronics, optoelectronics, and other fields due to their unique physical and chemical properties.

scholarly journals Two-Dimensional Pnictogen for Field-Effect Transistors

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-21 ◽  
Author(s):  
Wenhan Zhou ◽  
Jiayi Chen ◽  
Pengxiang Bai ◽  
Shiying Guo ◽  
Shengli Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Great Promise ◽  
Two Dimensional ◽  
Preparation Methods ◽  
Fundamental Properties ◽  
2D Layered Materials ◽  
Effect Transistor ◽  
Physical And Chemical

Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

MOF Nanosheet Reconstructed Two‐dimensional Bionic Nanochannel for Protonic Field‐effect Transistors

2021 ◽  
Author(s):  
Guo-Dong Wu ◽  
Hai-Lun Zhou ◽  
Zhi-Hua Fu ◽  
Wen-Hua Li ◽  
Jing-Wei Xiu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional

Optoelectronic Coincidence Detection with Two‐Dimensional Bi 2 O 2 Se Ferroelectric Field‐Effect Transistors

2021 ◽  
pp. 2103982
Author(s):  
Jian‐Min Yan ◽  
Jing‐Shi Ying ◽  
Ming‐Yuan Yan ◽  
Zhao‐Cai Wang ◽  
Shuang‐Shuang Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coincidence Detection ◽  
Two Dimensional

scholarly journals Visualizing the metal- MoS2 contacts in two-dimensional field-effect transistors with atomic resolution

2019 ◽  
Vol 3 (11) ◽  
Author(s):  
Ryan J. Wu ◽  
Sagar Udyavara ◽  
Rui Ma ◽  
Yan Wang ◽  
Manish Chhowalla ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Resolution ◽  
Two Dimensional
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