scholarly journals Electrical Properties of Two-Dimensional Materials Used in Gas Sensors

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1295 ◽  
Author(s):  
Rafael Vargas-Bernal
Keyword(s):  
Electrical Properties ◽  
Crystalline Structure ◽  
Gas Sensors ◽  
Electronic Band Structure ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Dispersion Energy ◽  
Electronic Band ◽  
Two Dimensional Materials ◽  
Materials Used

In the search for gas sensing materials, two-dimensional materials offer the possibility of designing sensors capable of tuning the electronic band structure by controlling their thickness, quantity of dopants, alloying between different materials, vertical stacking, and the presence of gases. Through materials engineering it is feasible to study the electrical properties of two-dimensional materials which are directly related to their crystalline structure, first Brillouin zone, and dispersion energy, the latter estimated through the tight-binding model. A review of the electrical properties directly related to the crystalline structure of these materials is made in this article for the two-dimensional materials used in the design of gas sensors. It was found that most 2D sensing materials have a hexagonal crystalline structure, although some materials have monoclinic, orthorhombic and triclinic structures. Through the simulation of the mathematical models of the dispersion energy, two-dimensional and three-dimensional electronic band structures were predicted for graphene, hexagonal boron nitride (h-BN) and silicene, which must be known before designing a gas sensor.

scholarly journals Research Progress of MoS2 Composite rGO Material in Gas Sensor

2021 ◽  
Vol 267 ◽  
pp. 02048
Author(s):  
Jiang Huaning ◽  
Wang Huaizhang ◽  
Liang Ting
Keyword(s):  
Gas Sensors ◽  
Materials Science ◽  
Single Layer ◽  
Reference Value ◽  
Research Progress ◽  
Single Layer Graphene ◽  
Two Dimensional ◽  
Preparation Methods ◽  
Two Dimensional Materials ◽  
Materials Used

Since the successful preparation of single-layer graphene in 2004, two-dimensional materials have gradually become one of the research hotspots in the field of materials science. However, due to the inevitable defects of intrinsic two-dimensional materials, researchers began to explore how to obtain more excellent two-dimensional materials. In this paper, the basic properties, preparation methods and application in gas sensors of MoS2/rGO composites are reviewed. This paper has a certain reference value for the research of two-dimensional materials used in gas sensors.

Optical properties of two-dimensional materials with tilted anisotropic Dirac cones: theoretical modelling with application to doped 8-Pmmn borophene

2021 ◽  
Author(s):  
Vl A Margulis ◽  
E E Muryumin
Keyword(s):  
Electronic Band Structure ◽  
Grazing Incidence ◽  
Dielectric Substrate ◽  
Incident Radiation ◽  
Brewster Angle ◽  
Theoretical Modelling ◽  
Two Dimensional ◽  
Electronic Band ◽  
A Value ◽  
Transmission And Absorption

Abstract The optical reflection, transmission and absorption properties of borophene, a newly discovered two-dimensional material with tilted anisotropic Dirac cones, are explored within a simple electronic band structure model of 8-Pmmn borophene, proposed by Zabolotskiy and Lozovik (2016 Phys. Rev. B 94 165403). It is assumed that the borophene layer is deposited on a dielectric substrate, such as Al2O3, and that the borophene's electron density is controlled by an external gate voltage. The reflectance, transmittance and absorbance of the borophene layer, the conduction band of which is filled with electrons up to the Fermi level, are calculated against the frequency of the incident radiation, as well as on the angle of its incidence on the layer. Considered are the two principal cases of the incident radiation polarization either parallel to or normal to the plane of incidence. We reveal that the optical characteristics of 8-Pmmn borophene are distinctly different for the above two cases at all angles of radiation incidence, excepting the grazing incidence, for which the borophene layer is found to behave like a mirror regardless of the wave polarization. The results obtained indicate the possibility of visualizing the borophene layer deposited on a dielectric substrate by observing the minimum reflectivity of this layer at a certain angle incidence (called the quasi-Brewster angle) of the p-polarized radiation, which may differ by a value of about ten degrees from the Brewster angle of the substrate.

The latest development of CoOOH two-dimensional materials used as OER catalysts

2020 ◽  
Vol 56 (98) ◽  
pp. 15387-15405
Author(s):  
Shengqi Zhang ◽  
Tao Yu ◽  
Hui Wen ◽  
Zhiyuan Ni ◽  
Yan He ◽  
...  
Keyword(s):  
Structure Activity Relationship ◽  
Activity Relationship ◽  
Two Dimensional ◽  
Structure Activity ◽  
Two Dimensional Materials ◽  
Materials Used ◽  
Relationship Of

The influence of the structure–activity relationship of the two-dimensional CoOOH catalyst on the OER is analyzed from different angles.

scholarly journals A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 446
Author(s):  
Mahdi Faghihnasiri ◽  
Aidin Ahmadi ◽  
Samaneh Alvankar Golpayegan ◽  
Saeideh Garosi Sharifabadi ◽  
Ali Ramazani
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Electronic Band Structure ◽  
Hexagonal Phase ◽  
Strain Engineering ◽  
Elastic Behavior ◽  
Potential Candidate ◽  
Two Dimensional ◽  
Electronic Band ◽  
Wide Range

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within −10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.

scholarly journals Spin Direction-Controlled Electronic Band Structure in Two-Dimensional Ferromagnetic CrI3

Nano Letters ◽  
2018 ◽  
Vol 18 (6) ◽  
pp. 3844-3849 ◽  
Author(s):  
Peiheng Jiang ◽  
Lei Li ◽  
Zhaoliang Liao ◽  
Y. X. Zhao ◽  
Zhicheng Zhong
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Two Dimensional ◽  
Electronic Band ◽  
Spin Direction

Paraffin-Enabled Compressive Folding of Two-Dimensional Materials with Controllable Broadening of the Electronic Band Gap

2021 ◽  
Vol 13 (34) ◽  
pp. 40922-40931
Author(s):  
Weifeng Zhang ◽  
Zihan Zhao ◽  
Yating Yang ◽  
Yan Zhang ◽  
He Hao ◽  
...  
Keyword(s):  
Band Gap ◽  
Two Dimensional ◽  
Electronic Band ◽  
Two Dimensional Materials ◽  
Electronic Band Gap
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