scholarly journals Electrical Characteristics and pH Response of a Parylene-H Sensing Membrane in a Si-Nanonet Ion-Sensitive Field-Effect Transistor

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3892 ◽  
Author(s):  
Bo Jin ◽  
Ga-Yeon Lee ◽  
ChanOh Park ◽  
Donghoon Kim ◽  
Wonyeong Choi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Signal To Noise Ratio ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electrical Characteristics ◽  
Ph Sensing ◽  
Effect Transistor ◽  
Sensing Membrane

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2V−1s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor

2020 ◽  
Vol 20 (8) ◽  
pp. 4699-4703
Author(s):  
Hyun-Dong Song ◽  
Hyeong-Sub Song ◽  
Sunil Babu Eadi ◽  
Hyun-Woong Choi ◽  
Ga-Won Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Increase With Increase ◽  
Effect Transistor ◽  
Insulator Substrate

In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel tunneling occurs.

TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTH

2005 ◽  
Vol 04 (05n06) ◽  
pp. 1001-1006
Author(s):  
S. A. VITUSEVICH ◽  
M. V. PETRYCHUK ◽  
S. V. DANYLYUK ◽  
A. M. KURAKIN ◽  
N. KLEIN ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Length ◽  
Conducting Channel ◽  
Extended Range ◽  
Effect Transistor

The study of low frequency noise in nanoscale gate HEMT structures (L SD /L G >10) has been carried out. Deviation from 1/f dependence has been observed in extended range of frequency and one becomes more pronounced with increase of gate voltage. It is shown that main contribution to the noise stems from the region under the gate and adjacent parts of source-to-gate and gate-to-drain regions. The features observed in the carrier transport and noise spectra are explained within a model based on dynamic redistribution of the electric field along the conducting channel.

scholarly journals Spin Speed and Duration Dependence of TiO2Thin Films pH Sensing Behavior

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Muhammad AlHadi Zulkefle ◽  
Rohanieza Abdul Rahman ◽  
Khairul Aimi Yusof ◽  
Wan Fazlida Hanim Abdullah ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Oxide Semiconductor ◽  
Ph Sensing ◽  
Spin Speed ◽  
Coating Method ◽  
Effect Transistor ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2thin films were investigated. The spin coated TiO2thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

Low frequency noise in two‐dimensional metal‐semiconductor field effect transistor

1996 ◽  
Vol 68 (22) ◽  
pp. 3138-3140 ◽  
Author(s):  
M. E. Levinshtein ◽  
S.‐L. Rumyantsev ◽  
G. S. Simin ◽  
H. Park ◽  
W. C. B. Peatman ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Frequency Noise ◽  
Two Dimensional ◽  
Low Frequency Noise ◽  
Effect Transistor
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