scholarly journals Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2551 ◽  
Author(s):  
Xiaofeng Zhao ◽  
Chenchen Jin ◽  
Qi Deng ◽  
Meiwei Lv ◽  
Dianzhong Wen

A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity.

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28178-28188
Author(s):  
Xuan Liu ◽  
Ziheng Bai ◽  
Qianqian Liu ◽  
Yali Feng ◽  
Chaofang Dong ◽  
...  

Proposed failure mechanism of electrochemical migration under an external magnetic field caused by mold.


2020 ◽  
Vol 131 ◽  
pp. 107394 ◽  
Author(s):  
Jirui Wang ◽  
Ziheng Bai ◽  
Kui Xiao ◽  
Xueming Li ◽  
Qianqian Liu ◽  
...  

2015 ◽  
Vol 645-646 ◽  
pp. 595-599
Author(s):  
Xiao Feng Zhao ◽  
Qian Ru Lin ◽  
Ai Lin Mu ◽  
Dian Zhong Wen ◽  
Hong Quan Zhang

This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage VDS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.


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