scholarly journals The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider

Sensors ◽  
2017 ◽  
Vol 17 (11) ◽  
pp. 2657 ◽  
Author(s):  
◽  
Abderrahim Khamlichi ◽  
Jorge Rovira
Keyword(s):  
Voltage Sensor ◽  
Resistive Divider

scholarly journals The Structural Characterization of the Human Cardiac Sodium Channel Voltage-Sensor Domain IV Paddle Motif

2017 ◽  
Vol 112 (3) ◽  
pp. 242a
Author(s):  
Mohammed H. Bhuiyan ◽  
Adel K. Hussein ◽  
Boris Arshava ◽  
Jianqin Zhuang ◽  
James Aramini ◽  
...  
Keyword(s):  
Sodium Channel ◽  
Structural Characterization ◽  
Voltage Sensor ◽  
Cardiac Sodium Channel ◽  
Voltage Sensor Domain

scholarly journals An Ultra-Low Quiescent Current Under-Voltage Lockout Circuit for a High-Voltage Gate Driver IC

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1729
Author(s):  
Kunhee Cho
Keyword(s):  
High Voltage ◽  
Supply Voltage ◽  
Voltage Sensor ◽  
Oxide Semiconductor ◽  
Portable Devices ◽  
High Side ◽  
Resistive Divider ◽  
Gate Driver ◽  
Quiescent Current ◽  
Voltage Gate

An ultra-low quiescent current under-voltage lockout (UVLO) circuit for a high-voltage gate driver integrated circuit (HVIC) is described for application in portable devices. The UVLO circuit consumes the static current in the high-side circuitry and the resistive divider used to detect the supply-voltage was the major consumer of power in the circuit. Hence, a supply-voltage sensor based on a diode-connected metal–oxide–semiconductor field-effect transistor (MOSFET) with a voltage limiter design is proposed to ensure low power consumption. Unlike the conventional UVLO design, where a resistive divider is used, the proposed structure dissipates the negligible current at a low supply-voltage and significantly reduces the static current at the nominal and high supply-voltage. The high-side quiescent current using the proposed design and the conventional designs at various supply-voltage levels are analyzed. In the proposed structure, the size of the voltage sensor is considerably smaller when compared with those in conventional designs.

scholarly journals Engineering and Characterization of an Enhanced Fluorescent Protein Voltage Sensor

PLoS ONE ◽  
2007 ◽  
Vol 2 (5) ◽  
pp. e440 ◽  
Author(s):  
Dimitar Dimitrov ◽  
You He ◽  
Hiroki Mutoh ◽  
Bradley J. Baker ◽  
Lawrence Cohen ◽  
...  
Keyword(s):  
Fluorescent Protein ◽  
Voltage Sensor

Packaging and Performance of a Piezo-Optic Voltage Sensor

2007 ◽  
Author(s):  
Charles E. Seeley ◽  
Glen Koste ◽  
Ben Tran ◽  
Tom Dermis
Keyword(s):  
Voltage Sensor ◽  
Sensor Technology ◽  
Optical Wave ◽  
Lamination Process ◽  
Optical Wave Guide ◽  
And Performance ◽  
Electro Magnetic ◽  
Mission Profile ◽  
Measurable Change

There is growing interest in sensor technology that is immune to electro-magnetic interference. By nature, development of this technology covers multiple physical domains including electronics, optics, mechanics and materials. This paper discusses the design, fabrication and characterization of a piezooptic voltage sensor. The sensor utilizes piezoelectric fibers with interdigitated electrodes coupled to an optical wave guide via a dielectric matrix. The unknown voltage energizes the piezoelectric fibers to deform fiber Bragg gratings (FBGs) on the waveguide. Therefore, a measurable change in wavelength is related to the unknown voltage. The sensor is fabricated using a high quality, repeatable lamination process that does not require the handling of individual piezoelectric fibers. Characterization tests indicate the utility of the sensor in a simulated mission profile. Issues such as hysteresis, creep and optical polarization dependence were also identified.

Engineering and characterization of an enhanced fluorescent protein voltage sensor

2007 ◽  
Vol 58 ◽  
pp. S183
Author(s):  
Hiroki Mutoh ◽  
Dimitar Dimitrov ◽  
You He ◽  
Walther Akemann ◽  
Thomas Knopfel
Keyword(s):  
Fluorescent Protein ◽  
Voltage Sensor

Purification and structural characterization of the voltage-sensor domain of the hERG potassium channel

2012 ◽  
Vol 86 (2) ◽  
pp. 98-104 ◽  
Author(s):  
Hui Qi Ng ◽  
Young Mee Kim ◽  
Qiwei Huang ◽  
Shovanlal Gayen ◽  
Ahu Arslan Yildiz ◽  
...  
Keyword(s):  
Potassium Channel ◽  
Structural Characterization ◽  
Voltage Sensor ◽  
Voltage Sensor Domain
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