scholarly journals Computational Experiments on the Step and Frequency Responses of a Three-Axis Thermal Accelerometer

Sensors ◽  
2017 ◽  
Vol 17 (11) ◽  
pp. 2618 ◽  
Author(s):  
Yoshifumi Ogami ◽  
Naoya Murakita ◽  
Koji Fukudome
Keyword(s):  
Computational Experiments ◽  
Frequency Responses

Real Ear Sound Pressure Levels Developed by Three Portable Stereo System Earphones

1992 ◽  
Vol 1 (4) ◽  
pp. 52-55 ◽  
Author(s):  
Gail L. MacLean ◽  
Andrew Stuart ◽  
Robert Stenstrom
Keyword(s):  
High Frequency ◽  
Sound Pressure ◽  
Low Frequency ◽  
Test System ◽  
Output Frequency ◽  
Frequency Effects ◽  
Adult Men ◽  
Frequency Responses ◽  
Significant Difference ◽  
Sound Pressure Levels

Differences in real ear sound pressure levels (SPLs) with three portable stereo system (PSS) earphones (supraaural [Sony Model MDR-44], semiaural [Sony Model MDR-A15L], and insert [Sony Model MDR-E225]) were investigated. Twelve adult men served as subjects. Frequency response, high frequency average (HFA) output, peak output, peak output frequency, and overall RMS output for each PSS earphone were obtained with a probe tube microphone system (Fonix 6500 Hearing Aid Test System). Results indicated a significant difference in mean RMS outputs with nonsignificant differences in mean HFA outputs, peak outputs, and peak output frequencies among PSS earphones. Differences in mean overall RMS outputs were attributed to differences in low-frequency effects that were observed among the frequency responses of the three PSS earphones. It is suggested that one cannot assume equivalent real ear SPLs, with equivalent inputs, among different styles of PSS earphones.

MEASUREMENT AND COMPUTATIONAL EXPERIMENTS WITHIN NEWBORN'S BRAIN COOLING PROCESS

2018 ◽  
Author(s):  
Dominika Bandoła ◽  
Andrzej J. Nowak ◽  
Ziemowit Ostrowski ◽  
Marek Rojczyk ◽  
Wojciech Walas
Keyword(s):  
Computational Experiments ◽  
Brain Cooling ◽  
Cooling Process

Computational Experiments with Direct Simulation Quasi-Random Monte Carlo

2009 ◽  
Author(s):  
Jose Camberos ◽  
Robert Greendyke ◽  
Larry Lambe ◽  
Brook Bentley
Keyword(s):  
Monte Carlo ◽  
Computational Experiments ◽  
Direct Simulation

Researches and Applications of Computational Experiments

2014 ◽  
Vol 39 (8) ◽  
pp. 1157-1169 ◽  
Author(s):  
Kai-Nan CUI ◽  
Xiao-Long ZHENG ◽  
Ding WEN ◽  
Xue-Liang ZHAO
Keyword(s):  
Computational Experiments

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Beneficial performance of a quasi-zero stiffness vibration isolator with generalized geometric nonlinear damping

2020 ◽  
pp. 095745652097238
Author(s):  
Chun Cheng ◽  
Ran Ma ◽  
Yan Hu
Keyword(s):  
Damping Ratio ◽  
Nonlinear Damping ◽  
Vibration Isolator ◽  
Equivalent Damping ◽  
Frequency Responses ◽  
Geometric Nonlinear ◽  
Resonant Region ◽  
Force Transmissibility ◽  
Isolation Performance ◽  
Force And Displacement Transmissibility

Generalized geometric nonlinear damping based on the viscous damper with a non-negative velocity exponent is proposed to improve the isolation performance of a quasi-zero stiffness (QZS) vibration isolator in this paper. Firstly, the generalized geometric nonlinear damping characteristic is derived. Then, the amplitude-frequency responses of the QZS vibration isolator under force and base excitations are obtained, respectively, using the averaging method. Parametric analysis of the force and displacement transmissibility is conducted subsequently. At last, two phenomena are explained from the viewpoint of the equivalent damping ratio. The results show that decreasing the velocity exponent of the horizontal damper is beneficial to reduce the force transmissibility in the resonant region. For the case of base excitation, it is beneficial to select a smaller velocity exponent only when the nonlinear damping ratio is relatively large.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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