scholarly journals High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

Sensors ◽  
2016 ◽  
Vol 16 (6) ◽  
pp. 839 ◽  
Author(s):  
Naif Al-Hardan ◽  
Muhammad Abdul Hamid ◽  
Naser Ahmed ◽  
Azman Jalar ◽  
Roslinda Shamsudin ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
High Sensitivity ◽  
Effect Transistor

scholarly journals Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6921
Author(s):  
Yiqing Wang ◽  
Min Yang ◽  
Chuanjian Wu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Ph Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Channel Thickness ◽  
Effect Transistor ◽  
Simulation Results

pH sensors based on a nanostructured ion-sensitive field-effect transistor have characteristics such as fast response, high sensitivity and miniaturization, and they have been widely used in biomedicine, food detection and disease monitoring. However, their performance is affected by many factors, such as gate dielectric material, channel material and channel thickness. In order to obtain a pH sensor with high sensitivity and fast response, it is necessary to determine the appropriate equipment parameters, which have high processing cost and long production time. In this study, a nanostructured ion-sensitive field-effect transistor was developed based on the SILVACO technology computer-aided design (TCAD) simulator. Through experiments, we analyzed the effects of the gate dielectric material, channel material and channel thickness on the electrical characteristics of the nanostructured field-effect transistor. Based on simulation results, silicon nitride was selected as the gate dielectric layer, while indium oxide was chosen as the channel layer. The structure and parameters of the dual channel ion-sensitive field-effect transistor were determined and discussed in detail. Finally, according to the simulation results, a pH sensor based on the nanostructured ion-sensitive field-effect transistor was fabricated. The accuracy of simulation results was verified by measuring the output, transfer and pH characteristics of the device. The fabricated pH sensor had a subthreshold swing as low as 143.19 mV/dec and obtained an actual sensitivity of 88.125 mV/pH. In addition, we also tested the oxidation reaction of hydrogen peroxide catalyzed by horseradish peroxidase, and the sensitivity was up to 144.26 pA mol−1 L−1, verifying that the ion-sensitive field-effect transistor (ISFET) can be used to detect the pH of micro solution, and then combine the enzyme-linked assay to detect the concentration of protein, DNA, biochemical substances, biomarkers, etc.

scholarly journals Palladium-oxide Extended Gate Field Effect Transistor as pH Sensor

2021 ◽  
pp. 100102
Author(s):  
Prashant Sharma ◽  
Rini Singh ◽  
Rishi Sharma ◽  
Ravindra Mukhiya ◽  
Kamlendra Awasthi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Palladium Oxide ◽  
Effect Transistor

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

2021 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Zurita Zulkifli ◽  
Sukreen Hana Herman
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Spice Simulation ◽  
Discrete Component ◽  
Ph Values ◽  
Spice Model ◽  
Effect Transistor ◽  
Output Characteristics

Abstract A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

High-sensitivity detection of Concanavalin A using MoS2-based field effect transistor biosensor

2021 ◽  
Vol 54 (24) ◽  
pp. 245401
Author(s):  
Mingyang Ma ◽  
Lemeng Chao ◽  
Yuhang Zhao ◽  
Jiafeng Ding ◽  
Zhongchao Huang ◽  
...  
Keyword(s):  
Concanavalin A ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Effect Transistor ◽  
High Sensitivity Detection ◽  
Sensitivity Detection

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

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