scholarly journals Porous Silicon Structures as Optical Gas Sensors

Sensors ◽  
2015 ◽  
Vol 15 (8) ◽  
pp. 19968-19991 ◽  
Author(s):  
Igor Levitsky
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Silicon Structures

Fabricating optical waveguide based on porous silicon structures

Optik ◽  
2013 ◽  
Vol 124 (9) ◽  
pp. 855-858 ◽  
Author(s):  
Abbas Shokrollahi ◽  
Maryam Zare
Keyword(s):  
Porous Silicon ◽  
Optical Waveguide ◽  
Silicon Structures

scholarly journals Synthesis and characterization of porous silicon gas sensors

2018 ◽  
Vol 1003 ◽  
pp. 012087 ◽  
Author(s):  
Roaa A abbas ◽  
Alwan M Alwan ◽  
Zainab T Abdulhamied
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Synthesis And Characterization

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

Role of microstructure and layer thickness in porous silicon conductometric gas sensors

2005 ◽  
Vol 202 (8) ◽  
pp. 1467-1471 ◽  
Author(s):  
Z. Gaburro ◽  
C. J. Oton ◽  
M. Ghulinyan ◽  
L. Pancheri ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Layer Thickness ◽  
Gas Sensors

Bias enhanced sensitivity in amorphous/porous silicon heterojunction gas sensors

2004 ◽  
Vol 338-340 ◽  
pp. 776-779 ◽  
Author(s):  
M. Tucci ◽  
V. La Ferrara ◽  
M. Della Noce ◽  
E. Massera ◽  
L. Quercia
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Enhanced Sensitivity
Sign in / Sign up

Export Citation Format

Share Document