scholarly journals An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process

Sensors ◽  
2014 ◽  
Vol 14 (7) ◽  
pp. 12735-12747 ◽  
Author(s):  
Ming-Zhi Yang ◽  
Ching-Liang Dai ◽  
Po-Jen Shih
Keyword(s):  
Ring Oscillator ◽  
Cmos Process ◽  
Oscillator Circuit

Backside FIB Device Modifications Through the BOX Layer of an SOI Device

2002 ◽  
Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Cross Section ◽  
Test Structure ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
Entire Process ◽  
Oscillator Frequency ◽  
Polysilicon Gate ◽  
Resistance Data

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

A High-Speed Temperature Sensor with Low Supply Sensitivity for SoC Thermal Monitoring

2018 ◽  
Vol 27 (07) ◽  
pp. 1850116
Author(s):  
Yuanxin Bao ◽  
Wenyuan Li
Keyword(s):  
Temperature Sensor ◽  
Conversion Rate ◽  
High Speed ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Temperature Sensitive ◽  
Cmos Process ◽  
Digital Code ◽  
Thermal Monitoring ◽  
Worst Case

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.

Ring Oscillator Phase Noise Properties due to PSN with Deterministic Frequency

2012 ◽  
Vol 496 ◽  
pp. 527-533
Author(s):  
Na Bai ◽  
Hong Gang Zhou ◽  
Qiu Lei Wu ◽  
Chun Yu Peng
Keyword(s):  
Phase Noise ◽  
Ring Oscillator ◽  
Cmos Process ◽  
Analysis Method ◽  
Noise Performance ◽  
Supply Noise ◽  
Total Phase ◽  
Phase Noise Performance ◽  
Oscillator Phase Noise ◽  
Oscillator Phase

In this paper, ring oscillator phase noise caused by power supply noise (PSN) with deterministic frequency is analyzed. Results show that phase noise caused by deterministic noise is only an impulse series. Compared with the jitter caused by PSN, the phase noise caused by PSN with deterministic frequency contributes considerably less to total phase noise performance. To verify the analysis method, a CMOS ring oscillator is designed and fabricated using SMIC 0.13 µm CMOS process. Comparisons between the analytical results and measurements prove the accuracy of the proposed method

Analysis of Within-Die and Die-to-Die CMOS-Process Variation With Reconfigurable Ring-Oscillator Arrays

2010 ◽  
Author(s):  
T. Ansari ◽  
W. Imafuku ◽  
A. Kawabata ◽  
M. Yasuda ◽  
T. Koide ◽  
...  
Keyword(s):  
Process Variation ◽  
Ring Oscillator ◽  
Cmos Process ◽  
Oscillator Arrays

scholarly journals Polypyrrole Porous Micro Humidity Sensor Integrated with a Ring Oscillator Circuit on Chip

Sensors ◽  
2010 ◽  
Vol 10 (11) ◽  
pp. 10095-10104 ◽  
Author(s):  
Ming-Zhi Yang ◽  
Ching-Liang Dai ◽  
De-Hao Lu
Keyword(s):  
Humidity Sensor ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
On Chip

A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

2012 ◽  
Vol 33 (7) ◽  
pp. 075004 ◽  
Author(s):  
Haijun Gao ◽  
Lingling Sun ◽  
Xiaofei Kuang ◽  
Liheng Lou
Keyword(s):  
Phase Noise ◽  
Fine Tuning ◽  
Ring Oscillator ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Low Phase Noise

scholarly journals Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

Sensors ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 10158-10170 ◽  
Author(s):  
Ching-Liang Dai ◽  
Po-Wei Lu ◽  
Chienliu Chang ◽  
Cheng-Yang Liu
Keyword(s):  
Pressure Sensor ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
On Chip

scholarly journals Design of Low Power and Low Phase Noise Current Starved Ring Oscillator for RFID Tag EEPROM

2019 ◽  
pp. 19-23
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Cmos Process ◽  
Clock Signal ◽  
Voltage Level ◽  
Rfid Tag ◽  
Low Phase Noise

Power dissipation of CMOS IC is a key factor in low power applications especially in RFID tag memories. Generally, tag memories like electrically erasable programmable read-only memory (EEPROM) require an internal clock generator to regulate the internal voltage level properly. In EEPROM, oscillator circuit can generate any periodic clock signal for frequency translation. Among different types of oscillators, a current starved ring oscillator (CSRO) is described in this research due to its very low current biasing source, which in turn restrict the current flows to reduce the overall power dissipation. The designed CSRO is limited to three stages to reduce the power dissipation to meet the specs. The simulated output shows that, the improved CSRO dissipates only 4.9 mW under the power supply voltage (VDD) 1.2 V in Silterra 130 nm CMOS process. Moreover, this designed oscillator has the lowest phase noise -119.38 dBc/Hz compared to other research works. In addition, the designed CSRO is able to reduce the overall chip area, which is only 0.00114 mm2. Therefore, this proposed low power and low phase noise CSRO will be able to regulate the voltage level successfully for low power RFID tag EEPROM.

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