scholarly journals Universal Upper Bound for the Entropy of Superconducting Vortices and the Quantum Nernst Effect

2021 ◽  
Vol 4 (1) ◽  
pp. 16-21
Author(s):  
Maria Cristina Diamantini ◽  
Carlo A. Trugenberger ◽  
Valerii M. Vinokur

We show that the entropy per quantum vortex per layer in superconductors in external magnetic fields is bounded by the universal value kBln2, which explains puzzling results of recent experiments on the Nernst effect.

2021 ◽  
Author(s):  
Cristina Diamantini ◽  
Carlo Trugenberger ◽  
Valerii Vinokur

Abstract We show that the entropy per quantum vortex per layer in superconductors in external magnetic fields is bounded by the universal value kBln 2, which explains puzzling results of recent experiments on the Nernst effect. The observed plateau of the Nernst signal as a function of the magnetic field is correspondingly attributed to a manifestation of the integer quantum Nernst effect.


2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Alexandre Correa ◽  
Federico Mompeán ◽  
Isabel Guillamón ◽  
Edwin Herrera ◽  
Mar García-Hernández ◽  
...  

2018 ◽  
Author(s):  
P. J. Hore

AbstractProlonged exposure to weak (~1 μT) extremely-low-frequency (ELF, 50/60 Hz) magnetic fields has been associated with an increased risk of childhood leukaemia. One of the few biophysical mechanisms that might account for this link involves short-lived chemical reaction intermediates known as radical pairs. In this report, we use spin dynamics simulations to derive an upper bound of 10 parts per million on the effect of a 1 μT ELF magnetic field on the yield of a radical pair reaction. By comparing this figure with the corresponding effects of changes in the strength of the Earth’s magnetic field, we conclude that if exposure to such weak 50/60 Hz magnetic fields has any effect on human biology, and results from a radical pair mechanism, then the risk should be no greater than travelling a few kilometres towards or away from the geomagnetic north or south pole.


1984 ◽  
Vol 53 (3) ◽  
pp. 262-265 ◽  
Author(s):  
A. Nishiguchi ◽  
T. Yabe ◽  
M. G. Haines ◽  
M. Psimopoulos ◽  
H. Takewaki

2019 ◽  
Vol 11 (5) ◽  
Author(s):  
Maxime Leroux ◽  
Fedor F. Balakirev ◽  
Masashi Miura ◽  
Kouki Agatsuma ◽  
Leonardo Civale ◽  
...  

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Jack C. Gartside ◽  
Son G. Jung ◽  
Seung Y. Yoo ◽  
Daan M. Arroo ◽  
Alex Vanstone ◽  
...  

AbstractStrongly-interacting nanomagnetic arrays are crucial across an ever-growing suite of technologies. Spanning neuromorphic computing, control over superconducting vortices and reconfigurable magnonics, the utility and appeal of these arrays lies in their vast range of distinct, stable magnetization states. Different states exhibit different functional behaviours, making precise, reconfigurable state control an essential cornerstone of such systems. However, few existing methodologies may reverse an arbitrary array element, and even fewer may do so under electrical control, vital for device integration. We demonstrate selective, reconfigurable magnetic reversal of ferromagnetic nanoislands via current-driven motion of a transverse domain wall in an adjacent nanowire. The reversal technique operates under all-electrical control with no reliance on external magnetic fields, rendering it highly suitable for device integration across a host of magnonic, spintronic and neuromorphic logic architectures. Here, the reversal technique is leveraged to realize two fully solid-state reconfigurable magnonic crystals, offering magnonic gating, filtering, transistor-like switching and peak-shifting without reliance on global magnetic fields.


1963 ◽  
Vol 30 (2) ◽  
pp. 291-294
Author(s):  
S. W. Angrist

The author, in an earlier paper, analyzed a Nernst effect generator by the usual thermodynamic methods and found that a bound of unity arises on the dimensionless quantity θT where θ is given as the square of the product of the Nernst coefficient and magnetic field divided by the thermal conductivity and electrical resistivity. By application of the appropriate equations of semiconductor theory this bound is shown to be justified for four limiting cases: Weak magnetic fields considering both extrinsic and intrinsic materials, and strong magnetic fields considering both extrinsic and intrinsic materials.


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