scholarly journals Transfer Printing Technology for Fabricating Chemical Sensors Based on Tin Dioxide Nanowires

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1076
Author(s):  
Florentyna Sosada-Ludwikowska ◽  
Robert Wimmer-Teubenbacher ◽  
Anton Köck
Keyword(s):  
Tin Dioxide ◽  
High Sensitivity ◽  
Transfer Printing ◽  
Printing Technology ◽  
Pdms Stamp ◽  
Si Substrates ◽  
Sno2 Nanowires ◽  
Spray Pyrolysis Deposition ◽  
Cu Catalyst ◽  
Performance Results

Multi-nanowire based chemical gas sensors were produced employing a fast and simple transfer printing technology. SnO2 nanowires (NWs) were grown by a specific two-step technology including spray pyrolysis deposition and a thermal annealing process in presence of a Cu-catalyst. Subsequently the SnO2 NWs were print transferred by a polydimethylsiloxane (PDMS) stamp on Si-substrates with gold inter-digital electrode structures (IDES) creating a multi-NW chemical sensing device. The print-transfer technology enables a fast, easy and cheap fabrication of NW-based sensor devices with a good reproducibility. High sensitivity to H2S has been achieved, the performance results are presented in this work.

scholarly journals Transfer Printing Technology as a Straightforward Method to Fabricate Chemical Sensors Based on Tin Dioxide Nanowires

Sensors ◽  
2019 ◽  
Vol 19 (14) ◽  
pp. 3049
Author(s):  
Florentyna Sosada-Ludwikowska ◽  
Robert Wimmer-Teubenbacher ◽  
Martin Sagmeister ◽  
Anton Köck
Keyword(s):  
Gas Sensor ◽  
Tin Dioxide ◽  
Gas Sensing ◽  
Transfer Printing ◽  
Electrode Structure ◽  
Step Method ◽  
Printing Technology ◽  
Straightforward Method ◽  
Spray Pyrolysis Deposition ◽  
Sensor Devices

Metal oxide multi-nanowire-based chemical gas sensors were manufactured by a fast and simple transfer printing technology. A two-step method employing spray pyrolysis deposition and a thermal annealing process was used for SnO 2 nanowires fabrication. A polydimethylsiloxane stamp was used to transfer the SnO 2 nanowires on two different gas sensing devices—Si-based substrates and microhotplate-based platform chips. Both contained a metallic inter-digital electrode structure (IDES), on which the SnO 2 nanowires were transferred for realization of multi-NW gas sensor devices. The gas sensor devices show a very high response towards H 2 S down to the 10 ppb range. Furthermore, a good response towards CO has been achieved, where in particular the microhotplate-based devices exhibit almost no cross sensitivity to humidity.

High-sensitivity photovoltaic responses in manganite-based heterojunctions on Si substrates for weak light detection

2011 ◽  
Vol 50 (17) ◽  
pp. 2666 ◽  
Author(s):  
S. S. Zhao ◽  
H. Ni ◽  
K. Zhao ◽  
S. Q. Zhao ◽  
Y. C. Kong ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Light Detection ◽  
Si Substrates ◽  
Weak Light ◽  
Weak Light Detection

The enhanced photoelectric properties of ZnO-doped WSe2 thin film

2021 ◽  
pp. 2150082
Author(s):  
Jingyi Zhu ◽  
Xin Ding ◽  
Xiaoyu Zhang ◽  
Xiying Ma
Keyword(s):  
Thin Films ◽  
Light Absorption ◽  
High Sensitivity ◽  
Nucleation Density ◽  
Light Power ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Photoelectric Properties ◽  
Very High ◽  
Photoluminescence Efficiency

The photoelectric properties of ZnO-doped WSe2 thin films created on Si substrates by a thermal evaporation method were investigated. The effects of ZnO on the surface morphology, structure, photoluminescence, light absorption characteristics and electrical properties of WSe2 thin films were analyzed. It is found that the nucleation density and the crystallinity of the ZnO-doped WSe2 nanowires are higher than without doping, and the electron mobility of the doped sample is about 1.4 times that of the undoped sample. Also, doping improved the light absorption and photoluminescence efficiency. Additionally, the [Formula: see text]–[Formula: see text] curve of the ZnO-doped WSe2/Si heterojunction gradually changes from a rectification characteristic to a linear dependence, and the photocurrent increases by about four times when the light power increases from 0 to 25 mW/cm2. Moreover, the heterojunction has a very high sensitivity to operating temperature; the current significantly increases as the temperature increases to 300[Formula: see text]. With high absorptivity and photoluminescence efficiency, and sensitivity to light and temperature, ZnO-doped WSe2 film is promising for use in optoelectronic devices.

Finger Metallization Using Pattern Transfer Printing Technology for c-Si Solar Cell

2020 ◽  
Vol 10 (5) ◽  
pp. 1290-1298
Author(s):  
Adrian Adrian ◽  
Dominik Rudolph ◽  
Norbert Willenbacher ◽  
Jan Lossen
Keyword(s):  
Solar Cell ◽  
Pattern Transfer ◽  
Transfer Printing ◽  
Printing Technology ◽  
Si Solar Cell

scholarly journals Fabrication of SnO2 Composite Nanofiber-Based Gas Sensor Using the Electrospinning Method for Tetrahydrocannabinol (THC) Detection

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 190 ◽  
Author(s):  
Pouria Mehrabi ◽  
Justin Hui ◽  
Sajjad Janfaza ◽  
Allen O’Brien ◽  
Nishat Tasnim ◽  
...  
Keyword(s):  
Tin Dioxide ◽  
High Sensitivity ◽  
Oxide Semiconductor ◽  
Calcination Temperatures ◽  
Electrospinning Method ◽  
Gold Doping ◽  
Poly Ethylene Oxide ◽  
Poly Ethylene ◽  
Mos Sensor ◽  
Fabrication Parameters

This paper presents the development of a metal oxide semiconductor (MOS) sensor for the detection of volatile organic compounds (VOCs) which are of great importance in many applications involving either control of hazardous chemicals or noninvasive diagnosis. In this study, the sensor is fabricated based on tin dioxide (SnO2) and poly(ethylene oxide) (PEO) using electrospinning. The sensitivity of the proposed sensor is further improved by calcination and gold doping. The gold doping of composite nanofibers is achieved using sputtering, and the calcination is performed using a high-temperature oven. The performance of the sensor with different doping thicknesses and different calcination temperatures is investigated to identify the optimum fabrication parameters resulting in high sensitivity. The optimum calcination temperature and duration are found to be 350 °C and 4 h, respectively and the optimum thickness of the gold dopant is found to be 10 nm. The sensor with the optimum fabrication process is then embedded in a microchannel coated with several metallic and polymeric layers. The performance of the sensor is compared with that of a commercial sensor. The comparison is performed for methanol and a mixture of methanol and tetrahydrocannabinol (THC) which is the primary psychoactive constituent of cannabis. It is shown that the proposed sensor outperforms the commercial sensor when it is embedded inside the channel.

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

MRS Bulletin ◽  
2009 ◽  
Vol 34 (9) ◽  
pp. 658-664 ◽  
Author(s):  
P. Muralt ◽  
R. G. Polcawich ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Microelectromechanical Systems ◽  
Low Voltage ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Si Substrates ◽  
The Impact

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

AFM for Preparing Si Masters in Soft Lithography

2006 ◽  
Vol 315-316 ◽  
pp. 762-765 ◽  
Author(s):  
Xiao Li Zhao ◽  
Shen Dong ◽  
Ying Chun Liang ◽  
T. Sun ◽  
Yong Da Yan
Keyword(s):  
Soft Lithography ◽  
Si Substrate ◽  
Pdms Stamp ◽  
Force Microscopy ◽  
Si Substrates ◽  
Technical Community ◽  
Morphology Analysis ◽  
Afm Imaging ◽  
Atom Force Microscopy

Atom Force Microscopy (AFM) can be employed to create surfaces in Si substrate with recessed features. The resulting patterns can serve as masters to make the required elastomeric stamps for soft lithography. Morphology analysis of patterned features on Si substrate and polydimethylsiloxane (PDMS) stamp by AFM imaging confirms that pattern can be successfully transferred from Si substrates to PDMS stamps. It is shown that this method for creating masters can be performed with an AFM, making this method particularly straightforward, economical and accessible to a large technical community that are provided with AFM for measurement.

High sensitivity Pt-doped SnO2 gas sensors fabricated using sol–gel solution on micromachined (100) Si substrates

2004 ◽  
Vol 100 (1-2) ◽  
pp. 190-194 ◽  
Author(s):  
B Esfandyarpour ◽  
S Mohajerzadeh ◽  
S Famini ◽  
A Khodadadi ◽  
E Asl Soleimani
Keyword(s):  
Gas Sensors ◽  
Sol Gel ◽  
High Sensitivity ◽  
Si Substrates
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