scholarly journals Ultra-Thin Integrated ALD Al2O3 Electron-Transparent Windows for TEM Nanoreactor Applications

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1001
Author(s):  
Levar Goossen ◽  
Jia Wei ◽  
Gregory Pandraud ◽  
Violeta Prodanovic ◽  
Pasqualina M. Sarro
Keyword(s):  
Electron Microscope ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Transmission Electron Microscope ◽  
Atomic Layer ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Transparent Windows ◽  
First Time

This paper presents for the first time, the integration of ultra-thin (<10 nm) atomic layer deposition (ALD) aluminum oxide (Al2O3) membranes as electron transparent windows (ETWs) for transmission electron microscope (TEM) nanoreactor applications. The process was successfully implemented and tested in a TEM. ETWs with thicknesses down to 5 and 10 nm were used to image nanoparticles (NPs) in a 120 keV TEM and 200 keV TEM respectively.

scholarly journals Comparison of the Growth and Thermal Properties of Nonwoven Polymers after Atomic Layer Deposition and Vapor Phase Infiltration

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1028
Author(s):  
Laura Keskiväli ◽  
Pirjo Heikkilä ◽  
Eija Kenttä ◽  
Tommi Virtanen ◽  
Hille Rautkoski ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Electron Microscope ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Scanning Transmission Electron Microscope ◽  
Scanning Calorimetry ◽  
Polymeric Surfaces ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Scanning Transmission

The growth mechanism of Atomic Layer Deposition (ALD) on polymeric surfaces differs from growth on inorganic solid substrates, such as silicon wafer or glass. In this paper, we report the growth experiments of Al2O3 and ZnO on nonwoven poly-L-lactic acid (PLLA), polyethersulphone (PES) and cellulose acetate (CA) fibres. Material growth in both ALD and infiltration mode was studied. The structures were examined with a scanning electron microscope (SEM), scanning transmission electron microscope (STEM), attenuated total reflectance-fourier-transform infrared spectroscopy (ATR-FTIR) and 27Al nuclear magnetic resonance (NMR). Furthermore, thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) analysis were used to explore the effect of ALD deposition on the thermal properties of the CA polymer. According to the SEM, STEM and ATR-FTIR analysis, the growth of Al2O3 was more uniform than ZnO on each of the polymers studied. In addition, according to ATR-FTIR spectroscopy, the infiltration resulted in interactions between the polymers and the ALD precursors. Thermal analysis (TGA/DSC) revealed a slower depolymerization process and better thermal resistance upon heating both in ALD-coated and infiltrated fibres, more pronounced on the latter type of structures, as seen from smaller endothermic peaks on TA.

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

Tuning the Composition and Nanostructure of Pt/Ir Films via Anodized Aluminum Oxide Templated Atomic Layer Deposition

2010 ◽  
Vol 20 (18) ◽  
pp. 3099-3105 ◽  
Author(s):  
David J. Comstock ◽  
Steven T. Christensen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin ◽  
Mark C. Hersam
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Layer Deposition

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

2012 ◽  
Vol 30 (1) ◽  
pp. 01A127 ◽  
Author(s):  
Annelies Delabie ◽  
Sonja Sioncke ◽  
Jens Rip ◽  
Sven Van Elshocht ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Semiconductor Substrates

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

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