scholarly journals Preparation and Thermoelectric Properties Study of Bipyridine-Containing Polyfluorene Derivative/SWCNT Composites

Polymers ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 278 ◽  
Author(s):  
Chengjun Pan ◽  
Luhai Wang ◽  
Wenqiao Zhou ◽  
Lirong Cai ◽  
Dexun Xie ◽  
...  

Polymer/inorganic thermoelectric composites have witnessed rapid progress in recent years, but most of the studies have focused on the traditional conducting polymers. The limited structures of traditional conducting polymers restrain the development of organic thermoelectric composites. Herein, we report the preparation and thermoelectric properties of a series of composites films based on SWCNTs and bipyridine-containing polyfluorene derivatives. The value of the power factor around 12 μW m−1 K−2 was achieved for the composite F8bpy/SWCNTs with a mass ratio of 50/50, and the maximum value of 62.3 μW m−1 K−2 was obtained when the mass ratio reached 10/90. Moreover, taking advantage of the bipyridine unit could chelate various kinds of metal ions to form polymer complexes. The enhanced power factor of 87.3 μW m−1 K−2 was obtained for composite F8bpy-Ni/SWCNTs with a mass ratio of 50/50. Finally, the thermoelectric properties of the bipyridine-containing polyfluorene derivative/SWCNT composites were conveniently tuned by chelating with different metal ions.

2022 ◽  
Author(s):  
Abeer AlObaid

Abstract Group III-V semiconductors are extensively studied for various technological applications. Different properties of Ga1-xInxP such as electronic, optical, elastic, thermal and mechanical, etc. were studied under different concentrations. However, there is no evident for thermoelectric performance of Ga1-xInxP (x = 0.0, 0.25, 0.50, 0.75 and 1.0). In the present study, we have calculated the structural, electronic and thermoelectric behavior of Ga1-xInxP by utilizing the WIEN2K package. The InP show indirect semiconductor nature of band gap of 2.1 eV. By adding the concentration of In, the band gap nature shifts from indirect to direct with a decrease in the band gap. For thermoelectric properties, Seebeck, thermal and electrical conductivity, power factor and figure of merit ZT are investigated through the BoltzTraP code. Our study reveals that Ga1-xInxP has a maximum value of ZT=0.79 at x=1, provide an opportunity for developing good thermoelectric devices.


2015 ◽  
Vol 3 (12) ◽  
pp. 6526-6533 ◽  
Author(s):  
Dohyuk Yoo ◽  
Jeonghun Kim ◽  
Seung Hwan Lee ◽  
Wonseok Cho ◽  
Hyang Hee Choi ◽  
...  

Synergic effects of conducting polymers, carbon nanotubes, and graphene result in the enhanced thermoelectric properties of nanocomposites.


Author(s):  
С.В. Новиков ◽  
В.С. Кузнецова ◽  
А.Т. Бурков ◽  
И. Шуманн

In this work we study thermoelectric properties of Cr0.26Si0.74 thin films with thickness of 11, 14, 21, 31, 56, 74, 115 nm. The films were produced by magnetron sputtering onto unheated substrate. The films had amorphous structure. Thermoelectric properties of samples were studied during thermal annealing in pure helium atmosphere. Changing of thermoelectric properties during annealing indicated changing in structure. It was found that kinetic of crystallization depends on the thickness of the films. The thermopower of nanocrystalline films decreases with increasing film thickness, and the power factor reaches its maximum value in films with a thickness of 31 nm.


2002 ◽  
Vol 743 ◽  
Author(s):  
S. Yamaguchi ◽  
Y. Iwamura ◽  
A. Yamamoto

ABSTRACTWe have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power device based on III-nitride semiconductors. For Al0.55In0.45N, the maximum value of power factor was 3.63×10−4 W/mK2 at 873K. For Al0.02In0.98O1.14N0.49 and Al0.14In0.86O1.30N0.67, the maximum power factor was 2.82×10−4 W/mK2 and 4.73×10−4 W/mK2 at 873 K, respectively. For InO0.82N0.86, it was 3.75×10−4 W/mK2 at 973 K.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2979
Author(s):  
Weiliang Ma ◽  
Jing Tian ◽  
Pascal Boulet ◽  
Marie-Christine Record

This paper reports first-principles calculations on PbBi2Te2S2, PbBi2Te2Se2 and PbBi2Te4 monolayers. The strain effects on their electronic and thermoelectric properties as well as on their stability have been investigated. Without strain, the PbBi2Te4 monolayer exhibits highest Seebeck coefficient with a maximum value of 671 μV/K. Under tensile strain the highest power factor are 12.38×1011 Wm−1K−2s−1, 10.74×1011 Wm−1K−2s−1 and 6.51×1011 Wm−1K−2s−1 for PbBi2Te2S2, PbBi2Te2Se2 and PbBi2Te4 at 3%, 2% and 1% tensile strains, respectively. These values are 85.9%, 55.0% and 3.3% larger than those of the unstrained structures.


2000 ◽  
Vol 626 ◽  
Author(s):  
Harald Beyer ◽  
Joachim Nurnus ◽  
Harald Böttner ◽  
Armin Lambrecht ◽  
Lothar Schmitt ◽  
...  

ABSTRACTThermoelectric properties of low dimensional structures based on PbTe/PbSrTe-multiple quantum-well (MQW)-structures with regard to the structural dimensions, doping profiles and levels are presented. Interband transition energies and barrier band-gap are determined from IR-transmission spectra and compared with Kronig-Penney calculations. The influence of the data evaluation method to obtain the 2D power factor will be discussed. The thermoelectrical data of our layers show a more modest enhancement in the power factor σS2 compared with former publications and are in good agreement with calculated data from Broido et al. [5]. The maximum allowed doping level for modulation doped MQW structures is determined. Thermal conductivity measurements show that a ZT enhancement can be achieved by reducing the thermal conductivity due to interface scattering. Additionally promising lead chalcogenide based superlattices for an increased 3D figure of merit are presented.


2018 ◽  
Vol 69 (9) ◽  
pp. 2323-2330 ◽  
Author(s):  
Daniela C. Culita ◽  
Claudia Maria Simonescu ◽  
Rodica Elena Patescu ◽  
Nicolae Stanica

A series of three chitosan-based magnetic composites was prepared through a simple coprecipitation method. It was investigated the influence of mass ratio between chitosan and magnetite on the physical and chemical properties of the composites in order to establish the optimum conditions for obtaining a composite with good adsorption capacity for Pb(II) and Cu(II) from mono and bicomponent aqueous solutions. It was found that the microspheres prepared using mass ratio chitosan / magnetite 1.25/1, having a saturation magnetization of 15 emu g--1, are the best to be used as adsorbent for the metal ions. The influence of different parameters such as initial pH values, contact time, initial concentration of metal ions, on the adsorption of Pb(II) and Cu(II) onto the chitosan-based magnetic adsorbent was investigated in details. The adsorption process fits the pseudo-second-order kinetic model in both mono and bicomponent systems, and the maximum adsorption capacities calculated on the basis of the Langmuir model were 79.4 mg g--1 for Pb(II) and 48.5 mg g--1 for Cu(II) in monocomponent systems, while in bicomponent systems were 88.3 and 49.5 mg g--1, respectively. The results revealed that the as prepared chitosan-based magnetic adsorbent can be an effective and promising adsorbent for Pb(II) and Cu(II) from mono and bicomponent aqueous solutions.


2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.


Energies ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2849 ◽  
Author(s):  
Yong Du ◽  
Haixia Li ◽  
Xuechen Jia ◽  
Yunchen Dou ◽  
Jiayue Xu ◽  
...  

Graphite/poly(3,4-ethyenedioxythiophene) (PEDOT) nanocomposites were prepared by an in-situ oxidative polymerization process. The electrical conductivity and Seebeck coefficient of the graphite/PEDOT nanocomposites with different content of graphite were measured in the temperature range from 300 K to 380 K. The results show that as the content of graphite increased from 0 to 37.2 wt %, the electrical conductivity of the nanocomposites increased sharply from 3.6 S/cm to 80.1 S/cm, while the Seebeck coefficient kept almost the same value (in the range between 12.0 μV/K to 15.1 μV/K) at 300 K, which lead to an increased power factor. The Seebeck coefficient of the nanocomposites increased from 300 K to 380 K, while the electrical conductivity did not substantially depend on the measurement temperature. As a result, a power factor of 3.2 μWm−1 K−2 at 380 K was obtained for the nanocomposites with 37.2 wt % graphite.


Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 815
Author(s):  
Eliana Vieira ◽  
Joana Figueira ◽  
Ana Lucia Pires ◽  
José Grilo ◽  
Manuel Fernando Silva ◽  
...  

The influence of substrate type in boosting thermoelectric properties of co-evaporated Bi2Te3 and Sb2Te3 films (with 400 nm-thick) is here reported. Optimized power factor values are 2.7 × 10−3 W K−2 m−1 and 1.4 × 10−3 W K−2 m−1 for flexible Bi2Te3 and Sb2Te3 films, respectively. This is an important result as it is at least 2 times higher than the power factor found in the literature for flexible Bi2Te3 and Sb2Te3 films. A flexible infrared thermopile sensor was developed with high detectivity (2.50 × 107 cm √HzW−1).


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