scholarly journals Polymeric Nanocomposites Membranes with High Permittivity Based on PVA-ZnO Nanoparticles for Potential Applications in Flexible Electronics

Polymers ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 1370 ◽  
Author(s):  
Roberto Ambrosio ◽  
Amanda Carrillo ◽  
Maria Mota ◽  
Karla de la Torre ◽  
Richard Torrealba ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Zno Nanoparticles ◽  
Flexible Electronics ◽  
Poly Vinyl Alcohol ◽  
Polymeric Nanocomposites ◽  
Arrhenius Behavior ◽  
High Permittivity ◽  
Potential Applications

This study reports the optical, structural, electrical and dielectric properties of Poly (vinyl alcohol) thin films membranes with embedded ZnO nanoparticles (PVA/ZnO) obtained by the solution casting method at low temperature of deposition. Fourier Transform Infrared spectra showed the characteristics peaks, which correspond to O–H and Zn–O bonds present in the hybrid material. The X-ray diffraction patterns indicated the presence of ZnO structure into the films. The composite material showed low absorbance and a wide band of gap energy from 5.5 to 5.83 eV. The surface morphology for the thin films of PVA/ZnO was studied by Atomic Force Microscopy and Scanning Electron Microscopy. The electrical properties of the membranes were also characterized by current-voltage characteristics and the DC conductivity showed Arrhenius behavior with values of activation energy from 0.62 to 0.78 eV and maximum conductivity at 2.4 × 10−12 S/cm. The dielectric properties of the nanocomposites were measured from low to high frequencies, and the results showed a high dielectric constant (ε) in the order of 104 at low frequency and values from ε ≈ 2000 to 100 in the range of 1 KHz–1 MHz respectively. The properties of PVA/ZnO such as the high permittivity and the low temperature of processing make it a suitable material for potential applications in the development of flexible electronic devices.

scholarly journals Polymeric Nanocomposites Membranes with High Permittivity Based on PVA-ZnO Nanoparticles for Potential Applications in Flexible Electronics

2018 ◽  
Author(s):  
Roberto Ambrosio ◽  
Amanda Carrillo ◽  
Maria de la Luz Mota ◽  
Karla de la Torre ◽  
Richard TorreAlba ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Zno Nanoparticles ◽  
Flexible Electronics ◽  
Poly Vinyl Alcohol ◽  
Polymeric Nanocomposites ◽  
High Permittivity ◽  
Suitable Material ◽  
Potential Applications

In this study is reported the optical, structural and dielectric properties of Poly (vinyl alcohol) thin films membranes with embedded ZnO nanoparticles (PVA/ZnO) obtained by solution casting method at low temperature of deposition. Fourier Transform Infrared spectra showed the characteristics peaks, which correspond to O-H and Zn-O bonds present in the hybrid material. The X-ray diffraction patterns indicated the presence of ZnO structure into the films. The composite material showed low absorbance and a wide band gap energy from 5.6 to 5.9 eV. The surface morphology for the thin films of PVA/ZnO was studied by Atomic Force Microscopy and Scanning Electron Microscopy. The dielectric properties of the nanocomposites were measured from low to high frequencies, the results showed a high dielectric constant (ε) in the order of 104 at low frequency and values from ε ≈ 2000 to 100 in the range of 1KHz-1MHz respectively, the properties of PVA/ZnO such as the high permittivity and the low temperature of processing make it a suitable material for potential applications in the development of flexible electronic devices.

Phase evolution and microwave dielectric properties of xBi2/3MoO4–(1 − x)BiVO4 (0.0 ≤ x ≤ 1.0) low temperature firing ceramics

2014 ◽  
Vol 43 (19) ◽  
pp. 7290-7297 ◽  
Author(s):  
Di Zhou ◽  
Wen-Bo Li ◽  
Li-Xia Pang ◽  
Jing Guo ◽  
Ze-Ming Qi ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Microwave Dielectric Properties ◽  
Phase Evolution ◽  
Phase Boundaries ◽  
High Permittivity ◽  
Temperature Firing ◽  
Microwave Dielectric

High permittivity and Qf value could be obtained near phase boundaries of monoclinic and tetragonal scheelite phases in xBi2/3MoO4–(1 − x)BiVO4 ceramics.

Low-temperature piezoelectric and dielectric properties of aromatic polyureas prepared by vapour deposition polymerization

1995 ◽  
Vol 7 (3) ◽  
pp. 293-301 ◽  
Author(s):  
Xian-Shan Wang ◽  
Yoshikazu Takahashi ◽  
Masayuki Lijima ◽  
Eiichi Fukada
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Hydrogen Bonds ◽  
Infrared Spectra ◽  
Vapour Deposition ◽  
Piezoelectric Constant ◽  
Poling Field ◽  
Piezoelectric Activity

Thin films of aromatic polyurea were prepared by vapour deposition of a diisocyanate tmonomer and a diamine monomer. Three kinds of aromatic polyurea were synthesized by combining 4,4'-dipheny Lnethane diisocyanate (MDI) with 4,4'-diamino-3,3'-dimethyldiphenylmethane (MeMDA), 4,4'-diaminodiphenylether (ODA), and 4,4'-diamino-diphenylmethane (MDA). After poling, for example applying a field of 120 MV m -I at 210C for 10 min, these films acquired piezoelectric activity. The piezoelectric constant (13-26 x 10 3 C m' 2) and dielectric constant (3-4) were almost constant over a temperature range between -150C and 50 C. Infrared spectra observed for as-deposited, poled and annealed films indicated that CO and NH dipoles were oriented along the poling field and that hydrogen bonds were formed between adjacent molecular chains.

The dielectric properties of low temperature thermally cross-linked polystyrene and poly(methyl methacrylate) thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (37) ◽  
pp. 28980-28984 ◽  
Author(s):  
Shengxia Li ◽  
Qing Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Methyl Methacrylate ◽  
Cross Linking ◽  
Poly Methyl Methacrylate

Thermal cross-linking polystyrene and poly(methyl methacrylate) thin-films with 1,3,5-tris(2-propynyloxy)benzene at low temperature for dielectric applications.

scholarly journals Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2552
Author(s):  
Xingwei Ding ◽  
Bing Yang ◽  
Haiyang Xu ◽  
Jie Qi ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Room Temperature ◽  
Network Formation ◽  
Semiconductor Films ◽  
Uv Treatment ◽  
Indium Zinc Oxide ◽  
Izo Thin Film

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

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