scholarly journals Inductive Medium Pressure UV-Source

Plasma ◽  
2019 ◽  
Vol 3 (1) ◽  
pp. 1-9
Author(s):  
Tim Gehring ◽  
Fabian Denk ◽  
Qihao Jin ◽  
Santiago Eizaguirre ◽  
Rainer Kling

In this paper, an efficient inductively coupled medium pressure source for ultraviolet radiation (UV-source) is demonstrated. The lamp was operated with powers up to 3 kW while the radiation and the coldest point temperature were measured. In addition, different coil geometries were investigated. Here a symmetrical and asymmetrical winding density were compared. Also the operation pressures and DC to radiation efficiencies are presented. In this work, an operation pressure of one atmosphere and an UV-efficiency (200–380 nm) of 15.5% was achieved. This is comparable to conventional medium pressure Hg-lamp technology. The main advantage of the presented inductive lamp is the electrodeless operation and therefore the longer service life, since an electrode failure is eliminated.

2001 ◽  
Vol 204 (1) ◽  
pp. 197-203 ◽  
Author(s):  
Miodrag Belosevic ◽  
Stephen A Craik ◽  
James L Stafford ◽  
Norman F Neumann ◽  
Joop Kruithof ◽  
...  

Author(s):  
William J. Baxter

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.


2006 ◽  
Vol 175 (4S) ◽  
pp. 260-260
Author(s):  
Nicholas J. Rukin ◽  
Samuel J. Moon ◽  
Dhaval Bodiwala ◽  
Christopher J. Luscombe ◽  
Mark F. Saxby ◽  
...  

2000 ◽  
Vol 10 (PR5) ◽  
pp. Pr5-399-Pr5-402
Author(s):  
V. E. Fortov ◽  
A. P. Nefedov ◽  
V. A. Sinel'shchikov ◽  
A. V. Zobnin ◽  
A. D. Usachev

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