scholarly journals Gyroton with the Corrugated Resonator

Plasma ◽  
2019 ◽  
Vol 2 (1) ◽  
pp. 1-13
Author(s):  
Stanislav Kolosov ◽  
Alexander Kurayev ◽  
Alexey Rak ◽  
Semen Kurkin ◽  
Artem Badarin ◽  
...  

A new type of high-power electronic device—a gyroton with a corrugated resonator—is described and investigated. Spatial bunching of the electron beam does not occur in this device, however, highly efficient electron beam power conversion into the rotating electromagnetic field power is possible. The rectilinear electron beam deviates from the axis by the slow TM11 wave, then it gives up longitudinal energy to the same wave with more than 78% efficiency, and an output power up to 30 MW. The developed mathematical model of the interaction of the relativistic electron beam with an irregular circular waveguide and resonator fields presented in this article can be used to calculate and optimize the processes occurring in various microwave electronic devices, such as gyrotrons, gyrotons, TWT, Gyro-TWT, and BWT.

Author(s):  
Patrick W. Wilkerson ◽  
Andrzej J. Przekwas ◽  
Chung-Lung Chen

Multiscale multiphysics simulations were performed to analyze wirebonds for power electronic devices. Modern power-electronic devices can be subjected to extreme electrical and thermal conditions. Fully coupled electro-thermo-mechanical simulations were performed utilizing CFDRC’s CFD-ACE+ multiphysics simulation software and scripting capabilities. Use of such integrated multiscale multiphysics simulation and design tools in the design process can cut cost, shorten product development cycle time, and result in optimal designs. The parametrically designed multiscale multiphysics simulations performed allowed for a streamlined parametric analysis of the electrical, thermal, and mechanical effects on the wirebond geometry, bonding sites and power electronic device geometry. Multiscale analysis allowed for full device thermo-mechanical analysis as well as detailed analysis of wirebond structures. The multiscale simulations were parametrically scripted allowing for parametric simulations of the device and wirebond geometry as well as all other simulation variables. Analysis of heat dissipation from heat generated in the power-electronic device and through Joule heating were analyzed. The multiphysics analysis allowed for investigation of the location and magnitude of stress concentrations in the wirebond and device. These stress concentrations are not only investigated for the deformed wirebond itself, but additionally at the wirebond bonding sites and contacts. Changes in the wirebond geometry and bonding geometry, easily changed through the parametrically designed simulation scripts, allows for investigation of various wirebond geometries and operating conditions.


2011 ◽  
Vol 354-355 ◽  
pp. 1394-1399
Author(s):  
Su Rong Qu ◽  
Zhong Yang Zhang

IGCT is a kind of new type power electronic device which developed from GTO and IGBT . In this paper, Author based on analysis of the internal structure of GTO, shows how GTO development IGCT through technical methods.Through simulation of its off and on performance, the work curve and comparing results of the two devices are given. Then on two components of the inverter circuits are analyzed and compared. Thinking in large power AC drive locomotive, IGCT inverter is greatly simplifier than GTO inverter circuit, and superior performance,it will become the main converter for AC driving locomotive.


2010 ◽  
Vol 44-47 ◽  
pp. 3970-3975
Author(s):  
Ke Wang ◽  
Bin Chen ◽  
Wen Han Chen ◽  
Hua Xu ◽  
Jia Xin Yuan

At first, this paper compared the present some advantages and disadvantages of reactive power compensation devices, and analysis the disadvantages of these devices in practical application deficiencies, then put forward a new kind of reactive power compensation principle. With the development of power electronic devices, this paper put forward a new type of reactive power compensation which based on RB-IGBT of SVC mode, synthesize the advantages of domestic reactive power compensation devices at present, and the prospect of application is very good.


2016 ◽  
Vol 20 (6) ◽  
pp. 1991-2000 ◽  
Author(s):  
Shanglong Xu ◽  
Weijie Wang ◽  
Zongkun Guo ◽  
Xinglong Hu ◽  
Wei Guo

High-power electronic devices with multiple heating elements often require temperature uniformity and operating within their functional temperature range for optimal performance. A multi-channel cooling experiment apparatus is developed for studying heat removal inside an electronic device with multiple heat sources. It mainly consists of a computer-controlled pump, a multi-channel heat sink for multi-zone cooling and the apparatus for measuring the temperature and pressure drop. The experimental results show the system and the designed multi-channel heat sink structure can control temperature distribution of electronic device with multiple heat sources by altering coolant flow rate.


2014 ◽  
Vol 1053 ◽  
pp. 69-73
Author(s):  
Li Wang ◽  
Chun Feng

The international research progress of GaN-based high frequency, high power microwave electronic device is introduced. The latest developments in high efficiency and millimeter wave devices are especially described.


2016 ◽  
Vol 858 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Jie Zhang ◽  
Bernd Thomas ◽  
Edward Sanchez ◽  
Darren Hansen ◽  
...  

Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threading screw dislocation densities measured for 150 mm wafers were ~4100 cm-2 and ~100 cm-2, respectively, compared with values of ~5900 cm-2 and ~300 cm-2 measured for 100 mm wafers. While median basal plane dislocation counts in 150 mm samples exceed those of the smaller platform, a nearly 45% reduction was realized, resulting in a median density of ~3900 cm-2. Epilayers grown on 150 mm substrates likewise exhibit quality metrics that are comparable to 100 mm samples, with median thickness and doping sigma/mean values of 1.1% and 4.4%, respectively.


Author(s):  
Е.М. Тотьменинов ◽  
С.А. Кицанов ◽  
А.И. Климов ◽  
А.Н. Синяков

AbstractA regime of quasi-stationary microwave generation in moderately relativistic microwave oscillator of the twistron type with 50 ± 20% efficiency of electron beam power conversion into electromagnetic radiation has been obtained in experiment through optimization of the electron–wave interaction. For the selected electron beam parameters (diode voltage, 210 kV; beam current. 1.36 kA) the output microwave power at 10.63 GHz frequency was 140 ± 40 MW in a guiding magnetic field of about 1.9 T. The duration of microwave pulses was about 16 ns.


Author(s):  
T. Ichinokawa ◽  
H. Maeda

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.


Author(s):  
H. Weiland ◽  
D. P. Field

Recent advances in the automatic indexing of backscatter Kikuchi diffraction patterns on the scanning electron microscope (SEM) has resulted in the development of a new type of microscopy. The ability to obtain statistically relevant information on the spatial distribution of crystallite orientations is giving rise to new insight into polycrystalline microstructures and their relation to materials properties. A limitation of the technique in the SEM is that the spatial resolution of the measurement is restricted by the relatively large size of the electron beam in relation to various microstructural features. Typically the spatial resolution in the SEM is limited to about half a micron or greater. Heavily worked structures exhibit microstructural features much finer than this and require resolution on the order of nanometers for accurate characterization. Transmission electron microscope (TEM) techniques offer sufficient resolution to investigate heavily worked crystalline materials.Crystal lattice orientation determination from Kikuchi diffraction patterns in the TEM (Figure 1) requires knowledge of the relative positions of at least three non-parallel Kikuchi line pairs in relation to the crystallite and the electron beam.


Author(s):  
Ryo Iiyoshi ◽  
Susumu Maruse ◽  
Hideo Takematsu

Point cathode electron gun with high brightness and long cathode life has been developed. In this gun, a straightened tungsten wire is used as the point cathode, and the tip is locally heated to higher temperatures by electron beam bombardment. The high brightness operation and some findings on the local heating are presented.Gun construction is shown in Fig.l. Small heater assembly (annular electron gun: 5 keV, 1 mA) is set inside the Wehnelt electrode. The heater provides a disk-shaped bombarding electron beam focusing onto the cathode tip. The cathode is the tungsten wire of 0.1 mm in diameter. The tip temperature is raised to the melting point (3,650 K) at the beam power of 5 W, without any serious problem of secondary electrons for the gun operation. Figure 2 shows the cathode after a long time operation at high temperatures, or high brightnesses. Evaporation occurs at the tip, and the tip part retains a conical shape. The cathode can be used for a long period of time. The tip apex keeps the radius of curvature of 0.4 μm at 3,000 K and 0.3 μm at 3,200 K. The gun provides the stable beam up to the brightness of 6.4×106 A/cm2sr (3,150 K) at the accelerating voltage of 50 kV. At 3.4×l06 A/cm2sr (3,040 K), the tip recedes at a slow rate (26 μm/h), so that the effect can be offset by adjusting the Wehnelt bias voltage. The tip temperature is decreased as the tip moves out from the original position, but it can be kept at constant by increasing the bombarding beam power. This way of operation is possible for 10 h. A stepwise movement of the cathode is enough for the subsequent operation. Higher brightness operations with the rapid receding rates of the tip may be improved by a continuous movement of the wire cathode during the operations. Figure 3 shows the relation between the beam brightness, the tip receding rate by evaporation (αis the half-angle of the tip cone), and the cathode life per unit length, as a function of the cathode temperature. The working life of the point cathode is greatly improved by the local heating.


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