scholarly journals Equivalent Circuit Model of High-Performance VCSELs

Photonics ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 13 ◽  
Author(s):  
Marwan Bou Sanayeh ◽  
Wissam Hamad ◽  
Werner Hofmann
Keyword(s):  
Equivalent Circuit ◽  
High Performance ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Rate Equations ◽  
Hole Burning ◽  
Cavity Surface ◽  
Carrier Distribution ◽  
Emitting Lasers ◽  
Multi Mode

In this work, a general equivalent circuit model based on the carrier reservoir splitting approach in high-performance multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. This model accurately describes the intrinsic dynamic behavior of these VCSELs for the case where the lasing modes do not share a common carrier reservoir. Moreover, this circuit model is derived from advanced multi-mode rate equations that take into account the effect of spatial hole-burning, gain compression, and inhomogeneity in the carrier distribution between the lasing mode ensembles. The validity of the model is confirmed through simulation of the intrinsic modulation response of these lasers.

Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode

2018 ◽  
Vol 32 (08) ◽  
pp. 1750358
Author(s):  
Wei Wang ◽  
Ting Chen ◽  
Linshu Yan ◽  
Xiaoyuan Bao ◽  
Yuanyuan Xu ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Avalanche Photodiode ◽  
Circuit Model ◽  
Uniform Electric Field ◽  
Rate Equations ◽  
Current Frequency ◽  
Proposed Model ◽  
Parasitic Effect ◽  
Field Noise

The equivalent circuit model of Ge/Si Separate Absorption Charge Multiplication Avalanche Photodiode (SACM-APD) is proposed. Starting from the carrier rate equations in different regions of device and considering the influences of non-uniform electric field, noise, parasitic effect and some other factors, the equivalent circuit model of SACM-APD device is established, in which the steady-state and transient current voltage characteristics can be described exactly. In addition, the proposed Ge/Si SACM APD equivalent circuit model is embedded in PSpice simulator. The important characteristics of Ge/Si SACM APD such as dark current, frequency response, shot noise are simulated, the simulation results show that the simulation with the proposed model are in good agreement with the experimental results.

scholarly journals A Compact High-Efficient Equivalent Circuit Model of Multi-Quantum-Well Vertical-Cavity Surface-Emitting Lasers for High-Speed Interconnects

2020 ◽  
Vol 10 (11) ◽  
pp. 3865
Author(s):  
Shanglin Li ◽  
Mohammadreza Sanadgol Nezami ◽  
David Rolston ◽  
Odile Liboiron-Ladouceur
Keyword(s):  
Quantum Well ◽  
Equivalent Circuit ◽  
High Speed ◽  
Equivalent Circuit Model ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Multi Quantum Well

Due to their low power consumption, high modulation speed, and low cost, vertical-cavity surface-emitting lasers (VCSEL) dominate short-reach data communications as the light source. In this paper, we propose a compact equivalent circuit model with noise effects for high-speed multi-quantum-well (MQW) VCSELs. The model comprehensively accounts for the carrier and photons dynamisms of a MQW structure, which includes separate confinement heterostructure (SCH) layers, barrier (B) layers, and quantum well (QW) layers. The proposed model is generalized to various VCSEL designs and accommodates a flexible number of quantum wells. Experimental validation of the model is performed at 25 Gb/s with a self-wire-bonded 850 nm VCSEL.

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