scholarly journals Synthesis Procedure of Highly Densely Packed Carbon Nanotube Forests on TiN

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 571 ◽  
Author(s):  
Teresa Campo ◽  
Sergio Pinilla ◽  
Santos Gálvez ◽  
José María Sanz ◽  
Francisco Márquez ◽  
...  

The goal of this research was to obtain high-density single-walled carbon nanotube forests (SWNTs) on conductive substrates for different applications, including field emission. For this, dip-coating was chosen as the catalyst deposition method, to subsequently grow SWNTs by Alcohol Catalytic Chemical Vapor Deposition (AC-CVD). Si (100) was chosen as the substrate, which was then coated with a TiN thin film. By sputtering with Ar, it was possible to generate alternating TiN and Si lanes, with a different wettability and, therefore, a different affinity for the catalysts. As a result, the Mo‒Co catalyst was mainly deposited on TiN and not on sputtered-Si, which allowed the selective growth of SWNT forests on the TiN conductive surfaces. These as-synthesized SWNTs were used for field emission measurements in a high vacuum chamber.

MRS Advances ◽  
2018 ◽  
Vol 3 (1-2) ◽  
pp. e1-e7 ◽  
Author(s):  
Takayuki Fujii ◽  
Takuya Okada ◽  
Takahiro Saida ◽  
Shigeya Naritsuka ◽  
Takahiro Maruyama

ABSTRACTGrowth of single-walled carbon nanotube (SWCNT) was achieved by an alcohol catalytic chemical vapor deposition (CVD) mechanism that was conducted in a high vacuum using Ru catalysts. By optimizing the ethanol pressure, SWCNTs can grow in a wide range of temperature between 500 °C and 900 °C. Both the yield and crystalline quality of SWCNTs reached their maxima at 700 °C. Significantly, the SWCNT growth was achieved even at 450 °C, which was much lower than the growth temperatures that were required for SWCNT growth using Ru catalysts previously. Raman measurements exhibited that the diameter distribution of the SWCNTs that were grown at 450 °C was quite narrow and (11, 4) nanotubes were dominant. The observations of transmission electron microscope (TEM) suggested that the size of the Ru particles were larger than the diameter of SWCNT. Such a relation was similar to the relation observed in the growth of SWCNTs using Pt catalysts.


MRS Advances ◽  
2018 ◽  
Vol 3 (1-2) ◽  
pp. 53-59 ◽  
Author(s):  
Takayuki Fujii ◽  
Takuya Okada ◽  
Takahiro Saida ◽  
Shigeya Naritsuka ◽  
Takahiro Maruyama

ABSTRACTGrowth of single-walled carbon nanotube (SWCNT) was achieved by an alcohol catalytic chemical vapor deposition (CVD) mechanism that was conducted in a high vacuum using Ru catalysts. By optimizing the ethanol pressure, SWCNTs can grow in a wide range of temperature between 500 °C and 900 °C. Both the yield and crystalline quality of SWCNTs reached their maxima at 700 °C. Significantly, the SWCNT growth was achieved even at 450 °C, which was much lower than the growth temperatures that were required for SWCNT growth using Ru catalysts previously. Raman measurements exhibited that the diameter distribution of the SWCNTs that were grown at 450 °C was quite narrow and (11, 4) nanotubes were dominant. The observations of transmission electron microscope (TEM) suggested that the size of the Ru particles were larger than the diameter of SWCNT. Such a relation was similar to the relation observed in the growth of SWCNTs using Pt catalysts.


2008 ◽  
Vol 18 (47) ◽  
pp. 5753 ◽  
Author(s):  
Cameron James Shearer ◽  
Jingxian Yu ◽  
Kane Michael O'Donnell ◽  
Lars Thomsen ◽  
Paul Christopher Dastoor ◽  
...  

ACS Nano ◽  
2010 ◽  
Vol 4 (12) ◽  
pp. 7337-7343 ◽  
Author(s):  
Ryota Yuge ◽  
Jin Miyawaki ◽  
Toshinari Ichihashi ◽  
Sadanori Kuroshima ◽  
Tsutomu Yoshitake ◽  
...  

2011 ◽  
Vol 1365 ◽  
Author(s):  
Yoeri van de Burgt ◽  
Yves Bellouard ◽  
Rajesh Mandamparambil ◽  
Andreas Dietzel

ABSTRACTA feedback control mechanism based on infrared radiation monitoring coupled with reflectivity information was developed to control the temperature of a laser assisted chemical vapor deposition process for the growth of carbon nanotube forests. An infrared laser operating at 808 nm is focused on a silicon substrate containing a 20 nm-aluminum-oxide layer and a 1.5 nm-iron catalyst layer. The growth takes place in an argon/ hydrogen/ ethylene gaseous environment. SEM and Raman spectroscopy analysis show that good controllability and reproducibility is achieved over multiple experiments.


Nanoscale ◽  
2016 ◽  
Vol 8 (1) ◽  
pp. 162-171 ◽  
Author(s):  
Guohai Chen ◽  
Robert C. Davis ◽  
Don N. Futaba ◽  
Shunsuke Sakurai ◽  
Kazufumi Kobashi ◽  
...  

We report the existence of a SWCNT “sweet spot” in the CNT diameter and spacing domain for highly efficient synthesis, within which SWCNTs possessed a unique set of characteristics.


Carbon ◽  
2016 ◽  
Vol 98 ◽  
pp. 624-632 ◽  
Author(s):  
Guofang Zhong ◽  
Junwei Yang ◽  
Hisashi Sugime ◽  
Rahul Rao ◽  
Jianwei Zhao ◽  
...  

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