scholarly journals Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 518 ◽  
Author(s):  
Lei Li
Keyword(s):  
Graphene Oxide ◽  
Charge Transport ◽  
Data Storage ◽  
Energy Band ◽  
Memory Device ◽  
Nanocomposite Films ◽  
Memory Devices ◽  
The Novel ◽  
Trilayer Structure ◽  
Novel Design

A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.

How Beneficial Is Reduced Graphene Oxide (RGO) for Long-Term Photo Generated Charge Transport in Bismuth Titanate – RGO Nanocomposite Films?

2015 ◽  
Vol 163 (2) ◽  
pp. H147-H153 ◽  
Author(s):  
Josephine Selvaraj ◽  
Satyajit Gupta ◽  
Raghavi Anand ◽  
Sebastian Fiechter ◽  
Vaidyanathan (Ravi) Subramanian
Keyword(s):  
Graphene Oxide ◽  
Charge Transport ◽  
Reduced Graphene Oxide ◽  
Bismuth Titanate ◽  
Nanocomposite Films ◽  
Reduced Graphene

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

scholarly journals Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6629
Author(s):  
Wang Ke ◽  
Xiaoting Yang ◽  
Tongyu Liu
Keyword(s):  
Data Storage ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Memory Device ◽  
Resistance Switching ◽  
Memory Devices ◽  
Switching Effect ◽  
Short Period ◽  
Non Volatile Memory ◽  
Order Of Magnitude

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

Resistive memory devices based on novel functionalized poly(aryl ether)s with pendant azobenzene

2018 ◽  
Vol 31 (3) ◽  
pp. 273-281
Author(s):  
Hejing Sun ◽  
Haibo Zhang ◽  
Jinhui Pang ◽  
Zheng Chen ◽  
Yuntao Han ◽  
...  
Keyword(s):  
Data Storage ◽  
High Performance ◽  
Nucleophilic Aromatic Substitution ◽  
Future Application ◽  
Memory Devices ◽  
The Novel ◽  
Aromatic Substitution ◽  
Aryl Ether ◽  
Good Thermal Stability ◽  
Memory Mechanism

We designed and synthesized two novel azobenzene functionalized poly(aryl ether)s (PAEs), PAE-azo-1 and PAE-azo-2, from a new azobenzene monomer via nucleophilic aromatic substitution polycondensation. This direct polymerization approach via azobenzene monomer has the advantages of controlling the distribution and amount of the azobenzene chromophores in the polymer. Both of the polymers showed very good thermal stability and excellent solubility for future application in the electronics industry. These polymers were fabricated as films by simple spin-coating and both of them were then prepared as sandwich memory devices. PAE-azo-1 and PAE-azo-2 exhibit write-once-read-many-times-type memory behavior, which can be encoded as “0” and “1,” and possess the low operation voltage below −3.0 V. The memory mechanism was investigated through ultraviolet–visible optical absorption spectrum and the cyclic voltammetry. These obtained results indicate that the novel azobenzene functionalized PAEs are a promising candidate for low power consumption and high-performance materials for data storage.

Ultrasound accelerated near-edge functionalized heterogeneous graphene oxide sonocatalyst for surface optical bandwidth efficacy and in-situ sonothermocatalysis

2021 ◽  
Author(s):  
Gopal Avashthi ◽  
Man Singh
Keyword(s):  
Graphene Oxide ◽  
The Novel ◽  
Surface Optical ◽  
Optical Bandwidth

Ultrasonochemically driven graphene oxide (GrO) functionalization (f) with Sulfanilamide (SA) near-edge catalyzed heterogeneous graphene oxide (h-GrO) as economic scalable f-(SA)GrO is reported. The novel in-situ H2O association was subsequently aligned...

scholarly journals Nanoscale optical writing through upconversion resonance energy transfer

2021 ◽  
Vol 7 (9) ◽  
pp. eabe2209
Author(s):  
S. Lamon ◽  
Y. Wu ◽  
Q. Zhang ◽  
X. Liu ◽  
M. Gu
Keyword(s):  
Graphene Oxide ◽  
Energy Transfer ◽  
Energy Consumption ◽  
Data Storage ◽  
High Capacity ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
High Energy ◽  
Optical Data ◽  
Upconversion Nanoparticles

Nanoscale optical writing using far-field super-resolution methods provides an unprecedented approach for high-capacity data storage. However, current nanoscale optical writing methods typically rely on photoinitiation and photoinhibition with high beam intensity, high energy consumption, and short device life span. We demonstrate a simple and broadly applicable method based on resonance energy transfer from lanthanide-doped upconversion nanoparticles to graphene oxide for nanoscale optical writing. The transfer of high-energy quanta from upconversion nanoparticles induces a localized chemical reduction in graphene oxide flakes for optical writing, with a lateral feature size of ~50 nm (1/20th of the wavelength) under an inhibition intensity of 11.25 MW cm−2. Upconversion resonance energy transfer may enable next-generation optical data storage with high capacity and low energy consumption, while offering a powerful tool for energy-efficient nanofabrication of flexible electronic devices.

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