scholarly journals High-Performance Photoresistors Based on Perovskite Thin Film with a High PbI2 Doping Level

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 505 ◽  
Author(s):  
Jieni Li ◽  
Henan Li ◽  
Dong Ding ◽  
Zibo Li ◽  
Fuming Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Doping Level ◽  
High Performance ◽  
Precursor Solution ◽  
Response Speed ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Suitable Amount

We prepared high-performance photoresistors based on CH3NH3PbI3 films with a high PbI2 doping level. The role of PbI2 in CH3NH3PbI3 perovskite thin film was systematically investigated using scanning electron microscopy, X-ray diffraction, time-resolved photoluminescence spectroscopy, and photoconductive atomic force microscope. Laterally-structured photodetectors have been fabricated based on CH3NH3PbI3 perovskite thin films deposited using precursor solution with various CH3NH3I:PbI2 ratios. Remarkably, the introduction of a suitable amount of PbI2 can significantly improve the performance and stability of perovskite-based photoresistors, optoelectronic devices with ultrahigh photo-sensitivity, high current on/off ratio, fast photo response speed, and retarded decay. Specifically, a highest responsivity of 7.8 A/W and a specific detectivity of 2.1 × 1013 Jones with a rise time of 0.86 ms and a decay time of 1.5 ms have been achieved. In addition, the local dependence of photocurrent generation in perovskite thin films was revealed by photoconductive atomic force microscopy, which provides direct evidence that the presence of PbI2 can effectively passivate the grain boundaries of CH3NH3PbI3 and assist the photocurrent transport more effectively.

scholarly journals Tip-Based Nanomachining on Thin Films: A Mini Review

2021 ◽  
Author(s):  
Shunyu Chang ◽  
Yanquan Geng ◽  
Yongda Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Data Storage ◽  
Three Dimensional ◽  
Maintenance Cost ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current State ◽  
Two Dimensional Materials

AbstractAs one of the most widely used nanofabrication methods, the atomic force microscopy (AFM) tip-based nanomachining technique offers important advantages, including nanoscale manipulation accuracy, low maintenance cost, and flexible experimental operation. This technique has been applied to one-, two-, and even three-dimensional nanomachining patterns on thin films made of polymers, metals, and two-dimensional materials. These structures are widely used in the fields of nanooptics, nanoelectronics, data storage, super lubrication, and so forth. Moreover, they are believed to have a wide application in other fields, and their possible industrialization may be realized in the future. In this work, the current state of the research into the use of the AFM tip-based nanomachining method in thin-film machining is presented. First, the state of the structures machined on thin films is reviewed according to the type of thin-film materials (i.e., polymers, metals, and two-dimensional materials). Second, the related applications of tip-based nanomachining to film machining are presented. Finally, the current situation of this area and its potential development direction are discussed. This review is expected to enrich the understanding of the research status of the use of the tip-based nanomachining method in thin-film machining and ultimately broaden its application.

EFFECT OF N CONTENT ON THE THERMAL STABILITY OF Ta–Si–N THIN FILM BARRIER LAYER

2010 ◽  
Vol 24 (30) ◽  
pp. 5867-5875
Author(s):  
JICHENG ZHOU ◽  
ZHENG LIU ◽  
XUQIANG ZHENG ◽  
YOUZHEN LI ◽  
DITIAN LUO
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Diffraction Method ◽  
N Content ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nano Crystalline ◽  
P Type

Ta–Si–N thin films and Cu/Ta–Si–N thin films were deposited on p-type Si (111) substrates by magnetron reactive sputtering. Then the films were characterized by four-point probe sheet resistance measurement, atomic force microscopy, X-ray diffraction method and scanning electron microscope, respectively. The experimental results show that the sheet resistance of Ta–Si–N thin film increases with N content. And the surface roughness of the thin film first decreases and then increases with N content. By increasing the N content, the diffusion barrier property of Ta–Si–N thin film can be improved; however, this improvement is not evident when N content beyond 56%. The as-deposited Ta–Si thin film is nano-crystalline. When doped with N, the as-deposited thin film becomes amorphous. The crystallization of Ta–Si–N thin film occurs again at high temperature. Cu atoms diffuse through grain boundaries of Ta–Si–N thin film into Si , and this leads to failure of the diffusion barrier.

Fractal Analysis of Morphological Image of Organic Phthalocyanine Tetrasulfonic Acid Tetrasodium (TsNiPc) Film

2014 ◽  
Vol 895 ◽  
pp. 407-410
Author(s):  
Yeo Lee Kong ◽  
S.V. Muniandy ◽  
M.S. Fakir ◽  
K. Sulaiman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fractal Dimension ◽  
Organic Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Spectral ◽  
Spectral Density Method ◽  
Surface Morphologies ◽  
Conductivity Of Thin Films

Surface morphology of thin films can be efficiently characterized using power spectral density method. Spectral based parameters from surface models can then be linked to electrical conductivity of thin films used for fabricating organic photovoltaic devices. In this study, the surface morphologies of the organic thin films phthalocyanine tetrasulfonic acid tetrasodium (TsNiPc) are investigated using atomic force microscopy. The thin film samples are imaged at 40-minutes and 120-minutes after the solvent treatment. The spectral exponent β is determined from the slope of PSD log-log plot and the fractal dimension D of each film is calculated based on fractal relation β = 8 2D. The relationship between surface roughness and fractal dimension with respect to electrical properties of thin film is discussed.

Effect of TiO2 Nanofiller on Nanocomposited PMMA/TiO2 Thin Film

2012 ◽  
Vol 576 ◽  
pp. 417-420 ◽  
Author(s):  
N.N. Hafizah ◽  
Ismail Lyly Nyl ◽  
M.Z. Musa ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Spin Coating ◽  
Weight Percentage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nanocomposite Thin Films ◽  
Scanning Electron

In this study, PMMA/TiO2 nanocomposite thin films were prepared by using sonication spin coating technique. The PMMA and TiO2 solution were mixed together and sonicated for 1h to confirm the homogeneity of the sample. The thin films obtained were then measured using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and Fourier transform infrared (FTIR). FESEM micrograph reveals that the uniformity increases with the increase of TiO2 weight percentage.

scholarly journals Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 869 ◽  
Author(s):  
Nicolas Raab ◽  
Dirk Schmidt ◽  
Hongchu Du ◽  
Maximilian Kruth ◽  
Ulrich Simon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Force Microscopy ◽  
Au Nanoparticles ◽  
Defect Formation ◽  
Subsequent Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Exchange Reaction ◽  
Defect Nucleation

We investigated the possibility of tuning the local switching properties of memristive crystalline SrTiO 3 thin films by inserting nanoscale defect nucleation centers. For that purpose, we employed chemically-synthesized Au nanoparticles deposited on 0.5 wt%-Nb-doped SrTiO 3 single crystal substrates as a defect formation template for the subsequent growth of SrTiO 3 . We studied in detail the resulting microstructure and the local conducting and switching properties of the SrTiO 3 thin films. We revealed that the Au nanoparticles floated to the SrTiO 3 surface during growth, leaving behind a distorted thin film region in their vicinity. By employing conductive-tip atomic force microscopy, these distorted SrTiO 3 regions are identified as sites of preferential resistive switching. These findings can be attributed to the enhanced oxygen exchange reaction at the surface in these defective regions.

Effect of Three Arm Polystyrene on Polystyrene Film Stability

2013 ◽  
Vol 481 ◽  
pp. 92-97
Author(s):  
Suntree Sangjan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polystyrene Film ◽  
Polymer Thin Film ◽  
Film Stability ◽  
Polymeric Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Blended Polymer ◽  
The Stability

This research studied ways to increase the stability of a polymer thin film with a thickness of approximately 10 nm. Our system consisted of a polystyrene (PS) thin film filled with three arm polystyrene (TAP) as additives. Formation of dewetting was investigated by atomic force microscopy and optical microscopy which showed that complete dewetting of the pure PS film occurs after being annealed at 120 oC for 5 h. The dewetting dynamics were dramatically suppressed when a small amount of TAP polymer was added into the PS thin film. We hypothesize that the nitrogen atom in the TAP polymer provides dipolarity between the polymeric thin films and the substrate followed by an increase in the interfacial interaction of the TAP/PS thin films, which in turn leads to increased film stability. However, if the concentration of TAP is too high, this leads to phase separation of the thin films. We also observed that the amount of TAP within the PS thin film largely affected the efficiency of inhibiting dewetting. This method could be utilized for the study of the mechanism in a blended polymer film.

Local piezoelectric and ferroelectric responses in nanotube-patterned thin films of BaTiO3 synthesized hydrothermally at 200 °C

2006 ◽  
Vol 21 (3) ◽  
pp. 547-551 ◽  
Author(s):  
Rosalía Poyato ◽  
Bryan D. Huey ◽  
Nitin P. Padture
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Force Microscopy ◽  
Direct Current ◽  
Piezoelectric Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Phase Images ◽  
Fabrication Procedure ◽  
Film Substrate

Piezoresponse atomic-force microscopy (PFM) has been used to characterize the local piezoelectric properties of a novel, nanotube-patterned (“honeycomb”) thin film of BaTiO3 on Ti substrate synthesized hydrothermally at 200 °C. PFM amplitude and phase images, prior to the application of any direct current (dc) field, show ring-shaped piezoelectric regions that correspond to the nanostructure of this film. These results show clearly that the as-synthesized nanotube-patterned BaTiO3 thin film is piezoelectric, with a net spontaneous polarization perpendicular to the film–substrate interface. In addition, polarization switching and hysteresis were observed as a function of applied dc field, confirming that this novel fabrication procedure results in unique configurations of BaTiO3 film that are also ferroelectric.

Preparation and Properties of Dy Doped La and Sc Solution of BiFeO3 Film

2013 ◽  
Vol 537 ◽  
pp. 109-113
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Doping Level ◽  
Sol Gel ◽  
Second Phase ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass ◽  
Dy Doping

A series of Dy doped La and Sc solution of BiFeO3 thin films have been prepared by using spin-coating process on conductive indium tin oxide (ITO)/glass substrates, which a simple sol-gel possess is applied and annealed at 500°C. With the increase of content of Dy, the strongest peak (110) of La and Sc solution BiFeO3 film tends to further broaden. There is no second phase existence within the present Dy doping level. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 film was about 370 nm. For Dy doping level is 0.05, the maximum double remanent polarization 2Pr of as-prepared BiFeO3 thin film is15.44 μC/cm2. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of as-prepared BiFeO3 thin film is 2.11 nm. The dielectric constant of as-prepared films tends to firstly increase and then decrease with the increase of Dy content

Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1165 ◽  
Author(s):  
Jorge G. Garza ◽  
Sadasivan Shaji ◽  
Ana Maria Arato Tovar ◽  
Eduardo Perez Tijerina ◽  
Alan Castillo Roderiguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Close Contact ◽  
Optical Transmittance ◽  
Halogen Lamp ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Antimony Selenide

AbstractSilver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited antimony sulphide (Sb2S3), silver selenide (Ag2Se) and Ag thin films in close contact with a selenium thin film. Sb2S3 thin film was prepared from chemical bath containing SbCl3 and Na2S2O3, Ag2Se from the bath containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on cleaned glass substrates. Ag thin film was deposited by vacuum thermal evaporation. The annealing temperature was varied from 300-390°C in vacuum (∼10−3 Torr) for 1 h. X-ray diffraction analysis showed the films formed at 350 °C was polycrystalline AgSb(S,Se)2 or AgSbSe2 depending on selenium thin film thickness. Morphology of these films was analyzed using Atomic Force Microscopy and Scanning Electron Microscopy. The elemental analysis was done using Energy Dispersive X-ray technique. Optical characterization of the thin films was done by optical transmittance spectra. The electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: Glass/ITO/CdS/AgSbSe2/Ag was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this PV structure showed Voc=370 mV and Jsc=0.5 mA/cm2 under illumination using a tungsten halogen lamp.

scholarly journals The influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films.

2021 ◽  
Vol 2053 (1) ◽  
pp. 012008
Author(s):  
G M Albalawneh ◽  
M M Ramli ◽  
M ZM Zain ◽  
Z Sauli
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
High Performance ◽  
Low Cost ◽  
Precursor Solution ◽  
Precursor Film ◽  
Fine Grained ◽  
Thin Film Fabrication ◽  
The Impact

Abstract Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.

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