scholarly journals Thermally Robust Non-Wetting Ni-PTFE Electrodeposited Nanocomposite

Nanomaterials ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Jason Tam ◽  
Jonathan Lau ◽  
Uwe Erb

The effect of high temperature exposure on the water wetting properties of co-electrodeposited superhydrophobic nickel-polytetrafluoroethylene (Ni-PTFE) nanocomposite coating on copper substrates was studied. This was accomplished by comparing the performance with a commercial superhydrophobic spray treatment (CSHST). The Ni-PTFE and CSHST coatings were both subjected to heating at temperatures up to 400 °C. Results showed that the Ni-PTFE was able to maintain its superhydrophobicity throughout the entire temperature range, whereas the CSHST became more wettable at 300 °C. Furthermore, additional abrasive wear tests were conducted on both materials that were subjected to heating at 400 °C. The Ni-PTFE remained highly non-wettable even after 60 m of abrasion length on 800 grit silicon carbide paper, whereas the CSHST coating was hydrophilic after 15 m.

2018 ◽  
Vol 284 ◽  
pp. 1257-1262
Author(s):  
V.G. Klimov ◽  
S.S. Zhatkin ◽  
A.V. Kogteva

This paper dwells upon using the VPr11-40N high-temperature brazing powder as a cladding applied by a laser to restore the height of the airfoil of a turbostarter blade in an NK-12MP turboprop, while also making the edge more wear-resistant. It has been found out that laser cladding generates a highly homogeneous structure with lesser gradient of hardness over the clad area compared to furnace brazing. Abrasive-wear tests have shown that this braze resists abrasive wear better than the blade substrate material (superalloy JS6К heat-resistant intermetallic alloy).


Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 643
Author(s):  
Xuhang Zhou ◽  
Qiulin Tan ◽  
Xiaorui Liang ◽  
Baimao Lin ◽  
Tao Guo ◽  
...  

Performing high-temperature measurements on the rotating parts of aero-engine systems requires wireless passive sensors. Surface acoustic wave (SAW) sensors can measure high temperatures wirelessly, making them ideal for extreme situations where wired sensors are not applicable. This study reports a new SAW temperature sensor based on a langasite (LGS) substrate that can perform measurements in environments with temperatures as high as 1300 °C. The Pt electrode and LGS substrate were protected by an AlN passivation layer deposited via a pulsed laser, thereby improving the crystallization quality of the Pt film, with the function and stability of the SAW device guaranteed at 1100 °C. The linear relationship between the resonant frequency and temperature is verified by various high-temperature radio-frequency (RF) tests. Changes in sample microstructure before and after high-temperature exposure are analyzed using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The analysis confirms that the proposed AlN/Pt/Cr thin-film electrode has great application potential in high-temperature SAW sensors.


2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.


1989 ◽  
Vol 170 ◽  
Author(s):  
Håkan A. Swan ◽  
Colette O'meara

AbstractPreliminary creep tests were performed on SiC whisker reinforced and matrix Si3N4 material fabricated by the NPS technique. The material was extensively crystallised in the as received material, leaving only thin amorphous films surrounding the grains. No improvement in the creep resistance could be detected for the whisker reinforced material. The deformation mechanisms were found to be that of cavitation in the form of microcracks, predominantly at the whisker/matrix interfaces, and the formation of larger cracks. Extensive oxidation of the samples, as a result of high temperature exposure to air, was observed for the materials tested at 1375°C.


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