scholarly journals Characterization and Applications of Nanoparticles Modified in-Flight with Silica or Silica-Organic Coatings

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 530 ◽  
Author(s):  
Patrick Post ◽  
Lisa Wurlitzer ◽  
Wolfgang Maus-Friedrichs ◽  
Alfred Weber
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
Organic Coatings ◽  
Coated Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Coating Composition ◽  
Modification Of The Surface

Nanoparticles are coated in-flight with a plasma-enhanced chemical vapor deposition (PECVD) process at ambient or elevated temperatures (up to 300 °C). Two silicon precursors, tetraethyl orthosilicate (TEOS) and hexamethyldisiloxane (HMDSO), are used to produce inorganic silica or silica-organic shells on Pt, Au and TiO2 particles. The morphology of the coated particles is examined with transmission electron microscopy (TEM) and the chemical composition is studied with Fourier-transform infrared spectroscopy (FTIR), Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). It is found that both the precursor and certain core materials have an influence on the coating composition, while other parameters, such as the precursor concentration, aerosol residence time and temperature, influence the morphology, but hardly the chemical composition. The coated particles are used to demonstrate simple applications, such as the modification of the surface wettability of powders and the improvement or hampering of the photocatalytic activity of titania particles.

scholarly journals Deposition Mechanism and Thickness Control of CVD SiC Coatings on NextelTM440 Fibers

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 408
Author(s):  
Yi Wang ◽  
Jian Sun ◽  
Bing Sheng ◽  
Haifeng Cheng
Keyword(s):  
Coating Thickness ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Deposition Mechanism ◽  
Thickness Control ◽  
X Ray ◽  
Transmission Electron ◽  
Sic Coatings

SiC coatings were successfully synthesized on NextelTM440 fibers by chemical vapor deposition (CVD) using methyltrichlorosilane as the original SiC source at 1373 K. After deposited, the fibers were fully surrounded by uniform coatings with some bulges. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HR-TEM) results indicated that the coatings were composed of β-SiC and free carbon. Moreover, thickness control of the coatings could be carried out by adjusting the deposition time. The coating thickness rose exponentially, and the exterior of the coatings became looser as the deposition time increased. The thickness of about 1.5 µm was obtained after depositing for 4 h. The coating thickness was also theoretically calculated, and the result agreed well with the measured thickness. Finally, the related deposition mechanism is discussed and a deposition model is built.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 747 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

The Effect of Dopant Additions on the Microstructure of Boron Fibers Before and After Reaction to MgB2

2004 ◽  
Vol 848 ◽  
Author(s):  
James V. Marzik ◽  
Raymond J. Suplinskas ◽  
William J. Croft ◽  
Warren J. MoberlyChan ◽  
John D. DeFouw ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Fiber ◽  
Transmission Electron ◽  
Before And After ◽  
Fiber Metal ◽  
Molten Magnesium

ABSTRACTBoron fibers made by a commercial chemical vapor deposition (CVD) process have been used as precursors for the formation of magnesium diboride (MgB2) superconducting wires. Prior to a reaction with magnesium, the addition of dopants such as carbon and titanium to the boron fiber has been shown to enhance the superconducting properties of MgB2. These dopants also influence the kinetics of the reaction with magnesium. In this study, the effect of carbon dopant additions on the microstructure of boron fibers was investigated using powder x-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Additionally, bundles of boron fibers were pressure infiltrated with molten magnesium and reacted at elevated temperatures. The microstructure and microchemistry of the fiber-metal interfaces were investigated by TEM and energy dispersive x-ray analysis (EDS).

scholarly journals Grain Structure and Growth of Dispersed Phase BN-AlN Coatings Grown via Chemical Vapor Deposition

1990 ◽  
Vol 202 ◽  
Author(s):  
Garth B. Freeman ◽  
Woo Y. Lee ◽  
W. J. Lackey ◽  
John A. Hanigofsky ◽  
Karren More
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Ceramic Coatings ◽  
Grain Structure ◽  
Dispersed Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThis paper discusses the variation in microstructures encountered during the separate depositions of boron nitride (BN) and aluminum nitride (A1N) as well as during the codeposition of BNߝA1N dispersed phase ceramic coatings. This combination was chosen in order to take advantage of the self lubricating properties of hexagonal BN along with the hard, erosion resistance of A1N. Films were characterized using scanning and transmission electron microscopy (SEM and TEM), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD).A range of coating microstructures are possible depending on the conditions of deposition. The best films produced, in terms of hardness, density, and tenacity, were a fine mixture of turbostratic BN and preferentially oriented A1N whiskers aligned with the whisker axis perpendicular to the substrate surface as seen by both electron microscopy and x-ray diffraction.

scholarly journals CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1066
Author(s):  
Fang Liang ◽  
Liangliang Zhan ◽  
Tianyu Guo ◽  
Xing Wu ◽  
Junhao Chu
Keyword(s):  
Crystal Structure ◽  
Photoelectron Spectroscopy ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Chemical Vapor Deposition Method ◽  
Layered Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Physical And Chemical

Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.

scholarly journals The Structure and Chemical Composition of the Cr and Fe Pyrolytic Coatings on the MWCNTs’ Surface According to NEXAFS and XPS Spectroscopy

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 374 ◽  
Author(s):  
Danil Sivkov ◽  
Olga Petrova ◽  
Alena Mingaleva ◽  
Anatoly Ob’edkov ◽  
Boris Kaverin ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Diffraction Order ◽  
Charge Compensation ◽  
Organic Chemical ◽  
Total Electron ◽  
X Ray ◽  
Metal Atoms ◽  
Mwcnts Surface

The paper is devoted to the structure and properties of the composite material based on multi-walled carbon nanotubes (MWCNTs) covered with pyrolytic iron and chromium. Fe/MWCNTs and Cr/MWCNTs nanocomposites have been prepared by the metal organic chemical vapor deposition (MOCVD) growth technique using iron pentacarbonyl and bis(arene)chromium compounds, respectively. Composites structures and morphologies preliminary study were performed using X-ray diffraction, scanning and transmission electron microscopy and Raman scattering. The atomic and chemical composition of the MWCNTs’ surface, Fe-coating and Cr-coating and interface—(MWCNTs surface)/(metal coating) were studied by total electron yield method in the region of near-edge X-ray absorption fine structure (NEXAFS) C1s, Fe2p and Cr2p absorption edges using synchrotron radiation of the Russian-German dipole beamline (RGBL) at BESSY-II and the X-ray photoelectron spectroscopy (XPS) method using the ESCALAB 250 Xi spectrometer and charge compensation system. The absorption cross sections in the NEXAFS C1s edge of the nanocomposites and MWCNTs were measured using the developed approach of suppressing and estimating the contributions of the non-monochromatic background and multiple reflection orders radiation from the diffraction grating. The efficiency of the method was demonstrated by the example of the Cr/MWCNT nanocomposite, since its Cr2p NEXAFS spectra contain additional C1s NEXAFS in the second diffraction order. The study has shown that the MWCNTs’ top layers in composite have no significant destruction; the MWCNTs’ metal coatings are continuous and consist of Fe3O4 and Cr2O3. It is shown that the interface between the MWCNTs and pyrolytic Fe and Cr coatings has a multilayer structure: a layer in which carbon atoms along with epoxy –C–O–C– bonds form bonds with oxygen and metal atoms from the coating layer is formed on the outer surface of the MWCNT, a monolayer of metal carbide above it and an oxide layer on top. The iron oxide and chromium oxide adhesion is provided by single, double and epoxy chemical binding formation between carbon atoms of the MWCNT top layer and the oxygen atoms of the coating, as well as the formation of bonds with metal atoms.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 745 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

X-Ray Photoemission Study of Silicon Nitride-GaAs Interfaces in Relation with GaAs Mesfet Passivation

1987 ◽  
Vol 98 ◽  
Author(s):  
Patrick Alnot ◽  
J. Olivier ◽  
F. Wyczisk ◽  
J. F. Peray ◽  
R. Joubart
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Excitation Frequency ◽  
Chemical Vapor ◽  
Gaas Surface ◽  
Surface Pretreatment ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Plasma Excitation ◽  
Photoemission Study

ABSTRACTWe have studied the influence of different GaAs surface treatments on the chemical composition and electrical behavior of the Si 3 N4 -GaAs interface, where Si 3 N4 was plasma enhanced chemical vapor deposited (PECVD) onto the treated GaAs(100) substrate. The chemistry of the resulting interface has been studied by X-ray photoelectron spectroscopy (XPS). It has been demonstrated that the chemical composition of the Si 3 N4-GaAs interface is drastically dependent on GaAs surface pretreatment and r.f. plasma excitation frequency. Output-input powers characteristics have been measured on chemically treated planar MESFET after Si3N4. passivation.

Effective Chemical Vapor Deposition and Characterization of N-Doped Graphene for High Electrochemical Performance

2021 ◽  
Vol 21 (6) ◽  
pp. 3183-3191
Author(s):  
Shanmugam Mahalingam ◽  
Mani Durai ◽  
Chinnasamy Sengottaiyan ◽  
Young-Ho Ahn
Keyword(s):  
Electron Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Active Material ◽  
Chemical Vapor ◽  
Diffraction Field ◽  
X Ray ◽  
Transmission Electron ◽  
Doped Graphene ◽  
Charge Discharge

Here we reports an effective synthetic method for the preparation of N-graphene upon thermal annealing of prepared graphene oxide in the existence of ammonia. N-doped graphene oxide was analysed using different characterization techniques like X-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The nitrogen atom showed good binding with the graphene sheets, that are analysed by the X-ray photoelectron spectroscopy. The synthesized N-graphene have shown higher thermal stability compared with GO and graphene. The elcerochemnical performance like Cyclic voltammetry as well chronopotentiometry charge–discharge calculations revealed that the N-doped graphene exhibits remarkable behaviour favors a specific capacitance value about 209 F g−1 at 5 mV s−1 and 270 F g−1 for 1 A g−1 applied current density including outsanding charge–discharge stability about 98% of the initial capacitance subsequent 1000 cycles at 5 A g−1. The N-content in the graphene material with the optimized reaction parameters potentially improved electrode active material for energy storage applications.

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