scholarly journals Large-Scale Synthesis of Semiconducting Cu(In,Ga)Se2 Nanoparticles for Screen Printing Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1148
Author(s):  
Bruna F. Gonçalves ◽  
Alec P. LaGrow ◽  
Sergey Pyrlin ◽  
Bryan Owens-Baird ◽  
Gabriela Botelho ◽  
...  
Keyword(s):  
Thin Film ◽  
Screen Printing ◽  
Large Scale ◽  
Near Infrared ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Hexagonal Structure ◽  
Film Deposition ◽  
Large Scale Synthesis ◽  
Deposition Processes

During the last few decades, the interest over chalcopyrite and related photovoltaics has been growing due the outstanding structural and electrical properties of the thin-film Cu(In,Ga)Se2 photoabsorber. More recently, thin film deposition through solution processing has gained increasing attention from the industry, due to the potential low-cost and high-throughput production. To this end, the elimination of the selenization procedure in the synthesis of Cu(In,Ga)Se2 nanoparticles with following dispersion into ink formulations for printing/coating deposition processes are of high relevance. However, most of the reported syntheses procedures give access to tetragonal chalcopyrite Cu(In,Ga)Se2 nanoparticles, whereas methods to obtain other structures are scarce. Herein, we report a large-scale synthesis of high-quality Cu(In,Ga)Se2 nanoparticles with wurtzite hexagonal structure, with sizes of 10–70 nm, wide absorption in visible to near-infrared regions, and [Cu]/[In + Ga] ≈ 0.8 and [Ga]/[Ga + In] ≈ 0.3 metal ratios. The inclusion of the synthesized NPs into a water-based ink formulation for screen printing deposition results in thin films with homogenous thickness of ≈4.5 µm, paving the way towards environmentally friendly roll-to-roll production of photovoltaic systems.

TEM studies of pulse electrodeposited Cu-Se and CuInSe2 films

1990 ◽  
Vol 48 (4) ◽  
pp. 696-697
Author(s):  
G. Veilleux ◽  
M. Boumerzoug ◽  
R.G. Saint-Jacques ◽  
Lê H. Dao
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Indium Tin Oxide ◽  
Large Scale ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Phase Changes ◽  
Solution Ph ◽  
Ito Glass

Photovoltaic technology is considered as one of the major options for large-scale energy production without pollution. Thin-film technologies are seen as a potential approach to produce cost-effective electricity by photovoltaic. Among the different thin-film deposition techniques (CVD, vacuum evaporation, sputtering, etc.), electrodeposition has emerged as a low-cost method. Using a pulsed electrodeposition technique semiconductor thin films of Cu-Se and CuInSe2 with improved uniformity and lower impurity have been prepared. Varying the electrodeposition solution pH, stoichiometric CuSe, Cu3Se2, Cu2 Se and Cu2Se films on Indium Tin Oxide (ITO) coated glass or Ni electrodes were obtained. Their composition and properties varied with heat treatment (3).This paper reports the detailed study by Energy-Dispersive Spectrometry (EDS) and Transmission Electron Microscopy (TEM) of heat treatment effects on the composition and phase changes. EDS analyses were done on films deposited onto ITO glass using an Hitachi S-530 Scanning Electron Microscope (SEM). Cerac 99.99% pure powders were used to establish EDS calibration spectra. TEM studies were done on films directly deposited onto Ni grids. Selected area diffraction pattern (SADP) analyses were used to identify the structures. Samples were examined in a Philips EM-300 TEM operated at 100 kV.

Deposition of diamond-like carbon

1993 ◽  
Vol 342 (1664) ◽  
pp. 277-286 ◽  
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Like Carbon ◽  
Hydrogenated Amorphous Carbon ◽  
Sizeable Fraction ◽  
Deposition Processes ◽  
Hydrogenated Amorphous

Diamond-like carbon refers to forms of amorphous carbon and hydrogenated amorphous carbon containing a sizeable fraction of sp 3 bonding, which makes them mechanically hard, infrared transparent and chemically inert. This paper discusses the various thin film deposition processes used to form diamond-like carbon and the deposition mechanisms responsible for promoting the metastable sp 3 bonding.

scholarly journals Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Bias Stress

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Sign in / Sign up

Export Citation Format

Share Document