scholarly journals Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1354 ◽  
Author(s):  
Kazuma Ito ◽  
Weifang Lu ◽  
Naoki Sone ◽  
Yoshiya Miyamoto ◽  
Renji Okuda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Incorporation Rate ◽  
Multiple Quantum ◽  
Peak Wavelength ◽  
Flow Rates ◽  
Light Emitting ◽  
Conventional Film ◽  
Different Diameters

Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor deposition. The non-polar GaInN/GaN structures were coaxially grown on n-core nanowires with combinations of three different diameters and pitches. To broaden the emission band in these three nanowire patterns, we varied the triethylgallium (TEG) flow rate and the growth temperature of the quantum barriers and wells, and investigated their effects on the In incorporation rate during MQS growth. At higher TEG flow rates, the growth rate of MQS and the In incorporation rate were promoted, resulting in slightly higher cathodoluminescence (CL) intensity. An enhancement up to 2–3 times of CL intensity was observed by escalating the growth temperature of the quantum barriers to 800 °C. Furthermore, decreasing the growth temperature of the quantum wells redshifted the peak wavelength without reducing the MQS quality. Under the modified growth sequence, monolithically grown nanowires with a broaden emission was achieved. Moreover, it verified that reducing the filling factor (pitch) can further promote the In incorporation probability on the nanowires. Compared with the conventional film-based quantum well LEDs, the demonstrated monolithic coaxial GaInN/GaN nanowires are promising candidates for phosphor-free white and micro light-emitting diodes (LEDs).

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

High Quality In1-x(Gax)AsyP1-y/InP Compressive Strained Quantum Well Structures Grown by LP-MOCVD

1996 ◽  
Vol 421 ◽  
Author(s):  
J. T. Zhu ◽  
A. R. Clawson ◽  
P. K. L. Yu
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
High Quality ◽  
Quantum Well Structures ◽  
Mocvd Growth ◽  
Buried Heterostructure ◽  
Strained Quantum Well

AbstractWe report the results of the growth of InAsyP1−y /InP and In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 compressive strained multiple quantum wells (CSMQW) structures grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Our studies showed high quality 1.06 μm InAs0.21P0.79/InP CSMQW structure with 6 periods can be obtained when the growth temperature is around 650°C and the pressure in the reactor is about 20 Torr. When the well thickness and composition are tuned for wavelength around 1.30 μm, the quality of this structure degrades. By employing 1.1 μm wavelength, lattice-matched InGaAsP as the barrier layers and setting the growth temperature at 600 °C, high quality 1.30 μm wavelength In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW materials with 10 periods can also be obtained. The materials were characterized with high resolution x-ray rocking curves, room and low temperature photoluminescence (PL). The 15K full-width-at-half-maximums (FWHM) of the PL peaks for 1.06 μm InAs0.21P0.79/InP and 1.30 μm In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW structures are 5.6 meV and 4.97 meV, respectively, which are among the smallest FWHMs reported up to date for these kinds of MOCVD growth materials. Buried heterostructure lasers at 1.3 μm wavelength have been obtained with the CSMQWs as the active layer.

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 11) GaN templates

2005 ◽  
Vol 892 ◽  
Author(s):  
Arpan Chakraborty
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Reactor Pressure

AbstractInGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (10-1-1) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (1011) GaN templates, emitting at 439 nm, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

scholarly journals Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1390
Author(s):  
Jie Zhang ◽  
Wei Liu ◽  
Shuyuan Zhang
Keyword(s):  
Quantum Wells ◽  
Growth Direction ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Peak Wavelength ◽  
Electron Hole ◽  
Light Emitting ◽  
Luminescence Efficiency ◽  
Valence Bands ◽  
Luminescence Characteristics

The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence efficiency is improved, and the EL spectral peak wavelength becomes longer for the MQW sample with a larger In gradient. Since the influence of In gradient is different for the conduction and valence bands in InGaN layers, the distribution of electrons and holes in QWs may be changed, leading to a redshift of EL spectra. In particular, when the In gradient increases, the overlap integral of electron-hole wavefunction in InGaN QWs increases, resulting in a higher radiative recombination rate and an enhanced EL intensity.

Comparative Study of GaN—Based LED Grown on Different Substrates

2011 ◽  
Vol 194-196 ◽  
pp. 2241-2244
Author(s):  
Dong Sheng Peng ◽  
Ke Jin ◽  
Rui Sheng Zheng ◽  
Lei Liu ◽  
Zhe Chuan Feng
Keyword(s):  
Quantum Wells ◽  
Sapphire Substrate ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Light Emitting ◽  
Crystal Properties

The InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) on silicon and sapphire substrates, respectively. The Optical and crystal properties of InGaN/GaN MQWs LEDs were investigated by room temperature photoluminescence (PL), temperature dependent PL measurements, Raman spectra and high-resolution double crystal X-ray diffraction(DCXRD). These results indicate that the crystal quality of InGaN/GaN MQWs growth on sapphire substrate are more preferable than that of InGaN/GaN MQWs growth on silicon substrate, and the interface of MQWs growth on substrate or silicon substrate is level. The peak positions of InGaN/GaN MQWs are 2.78 eV (446nm) and 2.64 eV (468.8nm) growth on sapphire substrate and silicon substrate, respectively.

The Optical and Structural Properties of InxGa1-XN/GaN Multiple Quantum Wells by Metal Organic Chemical Vapor Deposition

2012 ◽  
Vol 535-537 ◽  
pp. 1270-1274
Author(s):  
Li Jun Han ◽  
Bin Feng Ding ◽  
Guo Man Lin
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Material Design ◽  
Indium Content ◽  
Peak Position ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Single Cycle

The structural and optical properties of InxGa1-xN/GaN multi-quantum wells (MQWs) grown on sapphire are discussed. Two kinds of InxGa1-xN/GaN MQWs with same period and different single cycle thickness and different growth temperature of MQWs are selected. Firstly, from the result of SRXRD and RBS/C, we can estimate that indium content of InxGa1-xN /GaN MQWs is 0.033 and 0.056, the single cycle thickness of MQWs is 13.04nm and 15.86nm respectively. Secondly the PL results indicate the optical properties of InxGa1-xN/GaN MQWs. Finally, we find indium content decreasing with increasing growth temperature of MQWs and the emission intensity reducing with temperature increasing, the emission optical peak position versus temperature show the “S-shaped” character. All these experimental results testify the material design of InxGa1-xN/GaN MQWs will have potential applications in spectral LED.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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