scholarly journals Enhancing the Performance of Aqueous Solution-Processed Cu2ZnSn(S,Se)4 Photovoltaic Materials by Mn2+ Substitution

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1250
Author(s):  
Wenjie He ◽  
Yingrui Sui ◽  
Fancong Zeng ◽  
Zhanwu Wang ◽  
Fengyou Wang ◽  
...  

In this work, the Cu2MnxZn1−xSn(S,Se)4 (0 ≤ x ≤ 1) (CMZTSSe) alloy films were fabricated by a sol-gel method. Meanwhile, the effects of Mn substitution on the structural, morphological, electrical, optical, and device performance were studied systematically. The clear phase transformation from Cu2ZnSn(S,Se)4 (CZTSSe) with kesterite structure to Cu2MnSn(S,Se)4 (CMTSSe) with stannite structure was observed as x = 0.4. The scanning electron microscope (SEM) results show that the Mn can facilitate the grain growth of CMZTSSe alloy films. Since the x was 0.1, the uniform, compact, and smooth film was obtained. The results show that the band gap of the CMZTSSe film with a kesterite structure was incessantly increased in a scope of 1.024–1.054 eV with the increase of x from 0 to 0.3, and the band gap of the CMZTSSe film with stannite structure was incessantly decreased in a scope of 1.047–1.013 eV with the increase of x from 0.4 to 1. Meanwhile, compared to the power conversion efficiency (PCE) of pure CZTSSe device, the PCE of CMZTSSe (x = 0.1) device is improved from 3.61% to 4.90%, and about a maximum enhanced the open-circuit voltage (VOC) of 30 mV is achieved. The improvement is concerned with the enhancement of the grain size and decrease of the Cu instead of Zn (CuZn) anti-site defects. Therefore, it is believed that the adjunction of a small amount of Mn may be an appropriate approach to improve the PCE of CZTSSe solar cells.

2011 ◽  
Vol 295-297 ◽  
pp. 506-510
Author(s):  
Bing Wu ◽  
Peng Yi Liu ◽  
Zi Guo Chen ◽  
Jing Cao

The organic solar cells with a structure of ITO/Rubrene(35 nm)/C60(35 nm)/BCP (6 nm)/Al(150 nm) was fabricated and the influence of anode modifying layer(MoO3) and 3V bias voltage treatment on device performance were investigated. The experiment results show, inserting anode modifying layer, the open-circuit voltage and the power conversion efficiency were almost increased by a factor of 5.3 and 11.3, respectively. The anode modifying layer can effectively enhance the built-in electric field and improve dissociation and transport excitons. The bias voltage treatment can improve the performance of defective devices by burning partial defects, but there is little effect for too few defective devices.


2001 ◽  
Vol 668 ◽  
Author(s):  
F.S. Hasoon ◽  
H.A. Al-Thani ◽  
K.M. Jones ◽  
Y. Yan ◽  
H. R. Moutinho ◽  
...  

ABSTRACTGraded-band-gap CuIn1−xGaxSe2 (CIGS) absorbers with Ga/Ga+In value in the 20%-30% range have a demonstrated efficiency of 18.8%. For CdS-containing devices, the shortcircuit current density (Jsc) has almost reached its expected maximum. However, the open-circuit voltage of CIGS solar cells is limited by the surface microstructure and chemistry. In this work, we examine the microstructural properties and chemistry of CIGS. We also attempted to correlate the above observations and device performance.


2011 ◽  
Vol 383-390 ◽  
pp. 7677-7681
Author(s):  
Qiong Hou ◽  
Xiang Hua Zeng ◽  
Xin Xu ◽  
Ting Guo ◽  
Hong Yu Zhen ◽  
...  

High molecular weight, readily soluable copolymer was prepared from 9,9-di (2-thienyl-hexyl) fluorene (TF) 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-9,9-di octyl fluorene and narrow band gap comonomer 2,3-dimethyl- 5,8-(5-bromo)-dithien-2-yl-quinoxalines (DTQU) using pallad- ium catalyzed Suzuki coupling methods. To compare the copolymer to this without thiophene in the C9 side chain of fluorene, the copolymer from DOF and DTQU was synthesized. The electrochemical, optical and photovoltaic properties of the copolymers were studied. The absorption spectra of the copolymers measured in thin films display two absorption peaks. The power conversion efficiency achieved in the device configuration ITO/PEDT/FT- DTQU:PCBM (1:2)/Al is 0.85% with open-circuit voltage (Voc) 0.8V. Further improvement by manipulating polymer/electrode interface and further investigation of more polyfluorene copolymers with narrow band gap aryl-hetero cycle units on the side chain is in progress.


2019 ◽  
Vol 7 (15) ◽  
pp. 9025-9033 ◽  
Author(s):  
Jin-Feng Liao ◽  
Wu-Qiang Wu ◽  
Jun-Xing Zhong ◽  
Yong Jiang ◽  
Lianzhou Wang ◽  
...  

A multifunctional 2D polymeric semiconductor was incorporated to provide surprisingly robust efficacy in grain boundary functionalization and defect passivation of perovskite, which suppresses charge recombination and thus affording an illustrious photovoltage of 1.16 V and power conversion efficiency of 21.1%.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.


2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.


2019 ◽  
Vol 55 (30) ◽  
pp. 4315-4318 ◽  
Author(s):  
Shengfan Wu ◽  
Zhen Li ◽  
Jie Zhang ◽  
Tiantian Liu ◽  
Zonglong Zhu ◽  
...  

We present a strategy for suppressing the open-circuit voltage (Voc) loss of perovskite solar cells by incorporating large guanidinium cations (Gua+) into a perovskite lattice, leading to a significantly improved Voc of 1.19 V and an impressive power conversion efficiency of >21%.


RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7122-7129 ◽  
Author(s):  
M. Karakawa ◽  
T. Nagai ◽  
K. Adachi ◽  
Y. Ie ◽  
Y. Aso

A series of fulleropyrrolidines containing fluorine- and methoxy group were synthesized. The substitution pattern influenced the reduction potential of the fulleropyrrolidines and enabled precise control over an open circuit voltage of OPV cells.


2015 ◽  
Vol 4 (4) ◽  
pp. 361-366 ◽  
Author(s):  
Liangliang Han ◽  
Weichao Chen ◽  
Tong Hu ◽  
Junzhen Ren ◽  
Meng Qiu ◽  
...  

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