scholarly journals Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films

Molecules ◽  
2021 ◽  
Vol 26 (5) ◽  
pp. 1456
Author(s):  
Hong Yong Sohn ◽  
Arun Murali

This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.


2007 ◽  
Vol 40 (8) ◽  
pp. 2375-2387 ◽  
Author(s):  
Keun Su Kim ◽  
German Cota-Sanchez ◽  
Christopher T Kingston ◽  
Matej Imris ◽  
Benoit Simard ◽  
...  

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1219 ◽  
Author(s):  
Anna Julia Medesi ◽  
Dorit Nötzel ◽  
Thomas Hanemann

The ceramic injection molding (CIM) process is a cost-effective powder-based near net shape manufacturing process for large-scale production of complex-shaped ceramic functional components. This paper presents the rheological analysis of environmentally friendly CIM feedstock formulations based on the binder components polyvinyl butyral (PVB) and polyethylene gycol (PEG). The prepared PVB/PEG-based alumina molding compounds were investigated with respect to their PVB:PEG ratios as well as to their powder filling degrees in the range between 50 and 64 vol.%. Corresponding viscosities and shear stresses were determined for increasing shear rates to show the effects of increased PEG content and solid loadings on them. Two single reactor components were injection molded and subsequently joined in their green state for fabrication of an alumina microreactor. The intended purpose of the alumina microreactors is their potential application as wear-resistant and hydrothermal stable multifunctional devices (µ-mixer, µ-reactor, µ-analyzer) for continuous hydrothermal synthesis (CHTS) of metal oxide nanoparticles in supercritical water (sc-H2O) as the reaction medium.


2009 ◽  
Vol 293 ◽  
pp. 99-105 ◽  
Author(s):  
Girjesh Singh ◽  
S.B. Shrivastava ◽  
Deepti Jain ◽  
Swati Pandya ◽  
V. Ganesan

During the last two decades, the use of transparent conducting films of non-stoichiometric and doped metallic oxides for the conversion of solar energy into electrical energy has assumed great significance. A variety of materials, using various deposition techniques, has been tried for this purpose [1-3]. Among these various materials, zinc oxide (ZnO) is one of the prominent oxide semiconductors suitable for photovoltaic applications because of its high electrical conductivity and optical transmittance in the visible region of the solar spectrum [4]. Furthermore, thin films of ZnO have shown good chemical stability against hydrogen plasma, which is of prime importance in a-Si:H-based solar-cell fabrication. Thus, zinc oxide can serve as a good candidate for replacing SnO2 and indium tin oxide (ITO) films in Si:H-based solar cells. One of the outstanding features of ZnO is its large excitonic binding energy, i.e. 60meV, leading to the existence of excitons at room temperature and even at higher temperatures [5-8]. These unique characteristics have generated a wide range of applications of ZnO. For example, gas sensors [9], surface acoustic devices [10], transparent electrodes and solar cells. Many techniques are used for preparing the transparent conducting ZnO films, such as RF sputtering [11], evaporation [12], chemical vapour deposition [13], ion beam sputtering [14] and spray pyrolysis [15–18]. Among these, the spray pyrolysis technique has attracted considerable attention due to its simplicity and large-scale production combined with low-cost fabrication. By using this technique, one can produce large-area coatings without any need for ultra-high vacuum. Thus, the capital cost and the production cost of high-quality zinc oxide semiconductor thin films are lowest among all other techniques. In the present work, we have synthesized ZnO films by using the spray pyrolysis technique. A number of films have been prepared by changing the molarity of the precursor solution. The prepared films have been characterized with regard to their structural, morphological and electrical properties.


2016 ◽  
Vol 27 (5) ◽  
pp. 4913-4922 ◽  
Author(s):  
M. Duta ◽  
M. Anastasescu ◽  
J. M. Calderon-Moreno ◽  
L. Predoana ◽  
S. Preda ◽  
...  

2009 ◽  
Vol 1174 ◽  
Author(s):  
Davide Calestani ◽  
Ming Zheng Zha ◽  
Roberto Mosca ◽  
Laura Lazzarini ◽  
Giancarlo Salviati ◽  
...  

AbstractLarge-scale growth capability is a general requirement for any reliable and cost-effective device application. Catalyst-free vapor-phase growth techniques generally let obtain high purity materials, but their application in large-scale growths of zinc oxide (ZnO) nanostructures is not trivial, because the lack of catalysts makes the control of these process rather difficult. Three different optimizations of the basic vapor phase growth have been studied and performed to obtain selected and reproducible growths of three different ZnO nanostructures with improved yield, i.e. nanotetrapods, nanowires and nanorods. No precursor or catalyst has been used in order to reduce contamination sources as more as possible.


2016 ◽  
Vol 16 (9) ◽  
pp. 10166-10171 ◽  
Author(s):  
Dougal P Howard ◽  
Peter Marchand ◽  
Tharan Gordon ◽  
Jawwad A Darr

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