scholarly journals Ultrastructure of Cells and Microanalysis in Malus domestica Borkh. ‘Szampion’ Fruit in Relation to Varied Calcium Foliar Feeding

Molecules ◽  
2020 ◽  
Vol 25 (20) ◽  
pp. 4622
Author(s):  
Piotr Kowalik ◽  
Tomasz Lipa ◽  
Zenia Michałojć ◽  
Mirosława Chwil
Keyword(s):  
Cell Wall ◽  
Malus Domestica ◽  
Cell Structure ◽  
Middle Lamella ◽  
Apple Fruit ◽  
Malus Domestica Borkh ◽  
X Ray ◽  
Transmission Electron ◽  
Cytoplasmic Membranes

Calcium is one of the most poorly reutilized nutrients. Its deficiencies cause various physiological disturbances and, consequently, reduce the quantity and quality of yields. Reduced content of Ca2+ ions in cells leads to development of, e.g., bitter pit in apples. Efficient and instantaneous mitigation of Ca2+ deficiencies is provided by foliar feeding. There are no detailed data on the effect of foliar feeding with various calcium forms on the cell structure or on the microanalysis and mapping of this element in apple fruit cells. Therefore, we carried out comparative studies of the ultrastructure of epidermis and hypodermis cells, to assess the content and distribution of calcium in the cell wall, cytoplasmic membrane, cytoplasm, and precipitates of Malus domestica Borkh. ‘Szampion’ fruit exposed to four Ca treatments, including the control with no additional Ca supplementation (I) and foliar applications of Ca(NO3)2 (II), CaCl2 (III), and Ca chelated with EDTA (IV). Light and transmission electron microscopy and an X-ray microanalyzer were used and showed a beneficial effect of calcium preparations on the ultrastructure of fruit epidermis and hypodermis cells, manifested in the presence of a normally developed cell wall with a regular middle lamella, preserved continuity of cytoplasmic membranes, and stabilized cell structure. In the selected elements of apical epidermis cells, the highest level of Ca2+ ions was detected in the middle lamella, cell wall, plasmalemma, and cytoplasm. The highest increase in the Ca2+ content in these cell constituents was recorded in treatment IV, whereas the lowest value of the parameters was noted in variant III.

scholarly journals Latency- and Defense-Related Ultrastructural Characteristics of Apple Fruit Tissues Infected with Botryosphaeria dothidea

2001 ◽  
Vol 91 (2) ◽  
pp. 165-172 ◽  
Author(s):  
Ki Woo Kim ◽  
Eun Woo Park ◽  
Young Ho Kim ◽  
Kyung-Ku Ahn ◽  
Pan Gi Kim ◽  
...  
Keyword(s):  
Cell Wall ◽  
Fungal Growth ◽  
Apple Fruit ◽  
White Rot ◽  
Ultrastructural Changes ◽  
Disease Development ◽  
Botryosphaeria Dothidea ◽  
Transmission Electron ◽  
Thin Electron ◽  
Apple Fruits

Apple fruit tissues infected with Botryosphaeria dothidea were examined by transmission electron microscopy using susceptible cv. Fuji and resistant cv. Jonathan. Immature (green) and mature (red) fruits of cv. Fuji with restricted or expanding lesions were also examined to reveal subcellular characteristics related with latent and restricted disease development. In infected susceptible mature fruits, cytoplasmic degeneration and organelle disruption commonly occurred, accompanying cell wall dissolution around invading hyphae. Cell wall dissolution around invading hyphae in subepidermis was rare in immature, red halo-symptomed cv. Fuji and resistant cv. Jonathan fruits. In infected immature fruits of cv. Fuji, presumably at the latent state of disease development, cellular degeneration was less severe, and invading hyphae contained prominent microbody-lipid globule complexes or the deposition of thin electron-dense outer layer around cell wall of intercellular hyphae. Both mature fruits with red halos and resistant apple fruits formed cell wall protuberances at the outside of cell walls. In addition, electron-dense extramural layers were formed in the resistant apple fruits. Aberrant hyphal structures such as intrahyphal hyphae were found only in resistant fruit tissues, indicating the physiologically altered fungal growth. These ultrastructural changes of host tissues and fungal hyphae may reflect the pathogenesis of apple white rot under varying conditions of apple fruits.

scholarly journals SBA-16 Cage-Like Porous Material Modified with APTES as an Adsorbent for Pb2+ Ions Removal from Aqueous Solution

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 927 ◽  
Author(s):  
Viviana Palos-Barba ◽  
Abigail Moreno-Martell ◽  
Verónica Hernández-Morales ◽  
Carmen L. Peza-Ledesma ◽  
Eric M. Rivera-Muñoz ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Photoelectron Spectroscopy ◽  
Contact Time ◽  
Diffuse Reflectance Spectroscopy ◽  
Cell Structure ◽  
Textural Properties ◽  
Batch Adsorption ◽  
X Ray ◽  
Ion Removal ◽  
Transmission Electron

Tridimensional cubic mesoporous silica, SBA-16, functionalized with aminopropyl groups, were employed as adsorbents for Pb2+ ion removal from aqueous solution. The adsorption capacity was investigated for the effect of pH, contact time, temperature, and concentration of 3-aminopropyltriethoxysilane (APTES) employed for adsorbent functionalization. The textural properties and morphology of the adsorbents were evaluated by N2 physisorption, small-angle X-ray diffraction (XRD), diffuse reflectance spectroscopy (UV-vis), and transmission electron microscopy (TEM). The functionalization of the SBA-16 was evaluated by elemental analysis (N), thermogravimetric analysis (TG), Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). Batch adsorption studies show that the total Pb2+ ions removal was archived on adsorbent having an optimized amount of aminopropyl groups (2N-SBA-16). The maximum of Pb2+ ions removal occurred at optimized adsorption conditions: pH = 5–6, contact time 40 min, and at a low initial lead concentration in solution (200 mg L−1). Under the same adsorption conditions, the amino-functionalized SBA-16 with cubic 3D unit cell structure exhibited higher adsorption capability than its SBA-15 counterpart with uniform mesoporous channels.

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Michael Dudley ◽  
Zhou Xu ◽  
James. H. Edgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Mechanism ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Choice

ABSTRACTA systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

Sign in / Sign up

Export Citation Format

Share Document