scholarly journals Deep Blue Light Amplification from a Novel Triphenylamine Functionalized Fluorene Thin Film

Molecules ◽  
2019 ◽  
Vol 25 (1) ◽  
pp. 79 ◽  
Author(s):  
Tersilla Virgili ◽  
Marco Anni ◽  
Maria Luisa De Giorgi ◽  
Rocio Borrego Varillas ◽  
Benedetta M. Squeo ◽  
...  
Keyword(s):  
Cross Section ◽  
High Performance ◽  
Optical Gain ◽  
High Gain ◽  
Optically Pumped ◽  
Deep Blue ◽  
Light Amplification ◽  
Gain Cross Section ◽  
Low Threshold ◽  
Narrow Emission

The development of high performance optically pumped organic lasers operating in the deep blue still remains a big challenge. In this paper, we have investigated the photophysics and the optical gain characteristics of a novel fluorene oligomer functionalized by four triphenylamine (TPA) groups. By ultrafast spectroscopy we found a large gain spectral region from 420 to 500 nm with a maximum gain cross-section of 1.5 × 10−16 cm2 which makes this molecule a good candidate for photonic applications. Amplified Spontaneous Emission measurements (ASE) under 150 fs and 3 ns pump pulses have revealed a narrow emission at 450 nm with a threshold of 5.5 μJcm−2 and 21 μJcm−2 respectively. Our results evidence that this new fluorene molecule is an interesting material for photonic applications, indeed the inclusion of TPA as a lateral substituent leads to a high gain and consequently to a low threshold blue organic ASE.

scholarly journals Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Band Structure ◽  
High Performance ◽  
Earth Science ◽  
Optical Gain ◽  
High Gain ◽  
Type Ii ◽  
Applied Bias ◽  
Long Wavelength ◽  
Type Ii Superlattice ◽  
A Value

AbstractThe LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/e cut-off wavelength of the device is 8.0 µm. At 77 K, unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10−7 A/cm2. The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV. This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34 × 1013 cm Hz1/2/W at a peak detection wavelength of ~6.8 µm. The type-II superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach.

Progress in Antimonide-Based Mid-IR Lasers

1999 ◽  
Vol 607 ◽  
Author(s):  
G.W. Turner ◽  
M.J. Manfra ◽  
H.K. Choi ◽  
A.K. Goyal ◽  
S.C. Buchter ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Performance ◽  
Optical Pumping ◽  
Beam Quality ◽  
Power Conversion ◽  
Active Regions ◽  
High Gain ◽  
Optically Pumped ◽  
Optical Pump ◽  
Peak Output Power

AbstractMid-infrared optically pumped semiconductor lasers (OPSLs) are presently being investigated for a variety of commercial and military applications. Active regions in such optically pumped lasers must meet the dual requirements of high gain and low loss at mid-IR wavelengths, combined with sufficient absorption of the optical pump at shorter wavelengths for efficient power conversion. In this paper we report the successful growth, fabrication, and characterization of high-performance OPSLs that employ novel active regions consisting of combinations of GalnAsSb integrated-absorber layers with type-II GaInSb/InAs quantum well regions. With 1.85-µm optical pumping at 85 K, OPSLs with such active regions have exhibited a peak output power of 2.1 W at 3.9 pm, improved beam quality, power conversion efficiency of ∼8%, and characteristic temperatures of ∼47 K.

Tunable Optical Gain from Soluble Thiophene-Based Oligomers

2001 ◽  
Vol 665 ◽  
Author(s):  
M. Anni ◽  
G. Gigli ◽  
M. Zavelani-Rossi ◽  
C. Gadermaier ◽  
G. Lanzani ◽  
...  
Keyword(s):  
Cross Section ◽  
Optical Gain ◽  
Visible Range ◽  
High Solubility ◽  
Relaxation Dynamic ◽  
Time Resolved ◽  
Pump And Probe ◽  
Gain Cross Section ◽  
Probe Measurements ◽  
Photoluminescence Efficiency

ABSTRACTTunable optical gain is demonstrated, through pump and probe measurements, in spin coated neat films of soluble S,S-dioxide oligothiophenes with different functionalization pattern. The molecular functionalization with alkyl and aryl groups allows us to obtain photoluminescence efficiency up to 70%, good chemical stability, high solubility and tunable gain along the visible range from 470 nm to 660 nm. The gain cross section is up to 9*10-18 cm2. The gain relaxation dynamic is studied through time resolved pump and probe measurements. A comparison with some of the best organic materials for laser application is presented. From these results we conclude that thienyl-S,S-dioxide oligothiophenes are interesting materials for applications to organic lasers and amplifiers.

Tetraphenylbenzene-based AIEgens: the Horizontally Oriented Emitters for highly Efficient Non-doped Deep Blue OLEDs and Host for High-Performance Hybrid WOLEDs

2020 ◽  
Author(s):  
Pengbo Han ◽  
Zeng Xu ◽  
Chengwei Lin ◽  
Dongge Ma ◽  
Anjun Qin ◽  
...  
Keyword(s):  
High Performance ◽  
General Strategy ◽  
Flat Panel Displays ◽  
Light Emitting ◽  
Horizontal Orientation ◽  
Deep Blue ◽  
Full Color ◽  
High Emission ◽  
White Oleds ◽  
Low Efficiency

Deep blue organic-emitting fluorophores are crucial for application in white lighting and full color flat-panel displays but emitters with high color quality and efficiency are rare. Herein, novel deep blue AIE luminogens (AIEgens) with various donor units and an acceptor of cyano substituted tetraphenylbenzene (TPB) cores were developed and used to fabricate non-doped deep blue and hybrid white organic light-emitting diodes (OLEDs). Benefiting from its high emission efficiency and high proportion of horizontally oriented dipoles in the film state, the non-doped deep blue device based on CN-TPB-TPA realized a maximum external quantum efficiency 7.27%, with a low efficiency roll-off and CIE coordinates of (0.15, 0.08). Moreover, efficient two-color hybrid warm white OLEDs (CIE<sub>x,y</sub> = 0.43, 0.45) were achieved using CN-TPB-TPA as the blue-emitting layer and phosphor doped host, which realized maximum current, power, external quantum efficiencies 58.0 cd A<sup>-1</sup>, 60.7 lm W<sup>-1</sup> and 19.1%, respectively. This work provides a general strategy to achieve high performance, stable deep blue and hybrid white OLEDs by construction of AIEgens with excellent horizontal orientation

Low threshold 1550 nm emitting QD optically pumped VCSEL

2020 ◽  
pp. 1-1
Author(s):  
C. Paranthoen ◽  
C. Levallois ◽  
G. Brivalle ◽  
M. Perrin ◽  
A. Le Corre ◽  
...  
Keyword(s):  
Optically Pumped ◽  
Low Threshold

scholarly journals Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  
Keyword(s):  
Data Storage ◽  
High Performance ◽  
Memory Performance ◽  
Resistive Memory ◽  
Molecular Systems ◽  
Threshold Voltages ◽  
Donor Acceptor ◽  
Low Threshold ◽  
Multilevel Memory ◽  
Further Development

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold

Study on the Performance of the New High-Strength Steel-Encased Concrete Composite Beam (SCCB)

2013 ◽  
Vol 756-759 ◽  
pp. 161-165
Author(s):  
Qi Yin Shi ◽  
Chao Liu ◽  
Li Lin Cao ◽  
Zhen Wang
Keyword(s):  
Cross Section ◽  
High Strength Steel ◽  
High Strength Concrete ◽  
Composite Beam ◽  
High Performance ◽  
Bending Strength ◽  
Theoretical Study ◽  
High Strength ◽  
Simply Supported ◽  
Ordinary Steel

On the basis of the theoretical study and application of ordinary steel-encased concrete composite beam, this paper will focus on a new high-strength steel-encased concrete composite beam, and mainly studies high-performance steel Q420 and Q460, as well as high-strength concrete C60 and C80. Besides, an experimental study of 5 simply-supported beams is made, and the load-deflection curves of new SCCB are analyzed. The calculation formula of load which changes with depth of section and bending strength of the cross section is also analyzed. It is suggested that the calculated results announced should be identical with the experimental results.

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