scholarly journals Simulating DNA Chip Design Using All-Electronic Graphene-Based Substrates

Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 951 ◽  
Author(s):  
Ernane de Freitas Martins ◽  
Gustavo Troiano Feliciano ◽  
Ralph Hendrik Scheicher ◽  
Alexandre Reily Rocha

In this paper, we present a theoretical investigation of an all-electronic biochip based on graphene to detect DNA including a full dynamical treatment for the environment. Our proposed device design is based on the changes in the electronic transport properties of graphene interacting with DNA strands under the effect of the solvent. To investigate these systems, we applied a hybrid methodology, combining quantum and classical mechanics (QM/MM) coupled to non-equilibrium Green’s functions, allowing for the calculations of electronic transport. Our results show that the proposed device has high sensitivity towards the presence of DNA, and, combined with the presence of a specific DNA probe in the form of a single-strand, it presents good selectivity towards specific nucleotide sequences.

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  

Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...


2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.


2021 ◽  
Vol 118 (10) ◽  
pp. 103901
Author(s):  
Min Zhang ◽  
Wei Liu ◽  
Cheng Zhang ◽  
Sen Xie ◽  
Fuqiang Hua ◽  
...  

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