scholarly journals FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 11
Author(s):  
Wangqiong Xu ◽  
Ying Lu ◽  
Weibin Lei ◽  
Fengrui Sui ◽  
Ruru Ma ◽  
...  
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Great Promise ◽  
Photoelectrical Properties ◽  
Device Applications ◽  
The Individual

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

Phase-Shifting Electron Holography for Accurate Measurement of Potential Distributions in Organic and Inorganic Semiconductors

Microscopy ◽  
2020 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Satoshi Anada ◽  
Takeshi Sato ◽  
Noriyuki Yoshimoto ◽  
Tsukasa Hirayama
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Phase Measurement ◽  
Ion Beam ◽  
Functional Materials ◽  
Phase Shifting ◽  
Future Research ◽  
Electron Holography ◽  
Preparation Technique ◽  
Inorganic Semiconductors

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

REPLICATION OF NANO/MICRO QUARTZ MOLD BY HOT EMBOSSING AND ITS APPLICATION TO BOROSILICATE GLASS EMBOSSING

2008 ◽  
Vol 22 (31n32) ◽  
pp. 6118-6123 ◽  
Author(s):  
SUNG-WON YOUN ◽  
CHIEKO OKUYAMA ◽  
MASHARU TAKAHASHI ◽  
RYUTARO MAEDA
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Hot Embossing ◽  
High Fidelity ◽  
Borosilicate Glasses ◽  
Mems Devices ◽  
Barrier Layers ◽  
Multiple Copies ◽  
Micro Electromechanical System

Glass hot-embossing is one of essential techniques for the development of high-performance optical, bio, and chemical micro electromechanical system (MEMS) devices. This method is convenient, does not require routine access to clean rooms and photolithographic equipment, and can be used to produce multiple copies of a quartz mold as well as a MEMS component. In this study, quartz molds were prepared by hot-embossing with the glassy carbon (GC) masters, and they were applied to the hot-emboss of borosilicate glasses. The GC masters were prepared by dicing and focused ion beam (FIB) milling techniques. Additionally, the surfaces of the embossed quartz molds were coated with molybdenum barrier layers before embossing borosilicate glasses. As a result, micro-hot-embossed structures could be developed in borosilicate glasses with high fidelity by hot embossing with quartz molds.

Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix

1993 ◽  
Vol 316 ◽  
Author(s):  
H.A. Atwater ◽  
K.V. Shcheglov ◽  
S.S. Wong ◽  
K.J. Vahala ◽  
R.C. Flagan ◽  
...  
Keyword(s):  
Ion Beam ◽  
Optoelectronic Device ◽  
Structural Defects ◽  
Si Substrates ◽  
Localized State ◽  
Transmission Electron ◽  
Ion Beam Synthesis ◽  
Theoretical Predictions ◽  
Device Applications ◽  
Ge Nanocrystals

ABSTRACTIon beam synthesis of Si and Ge nanocrystals in an SiO2 matrix is performed by precipitation from supersaturated solid solutions created by ion implantation. Films of SiO2 on (100) Si substrates are implanted with Si and Ge at doses 1 × 1016/cm2 - 5 × 1016/cm2. Implanted samples are subsequently annealed to induce precipitation of Si and Ge nanocrystals. Raman spectroscopy and high-resolution transmission electron microscopy indicate a correlation between visible room-temperature photoluminescence and the formation of diamond cubic nanocrystals approximately 2–5 nm in diameter in annealed samples. As-implanted but unannealed samples do not exhibit luminescence. Rutherford backscattering spectra indicate a steepening of implanted Ge profiles upon annealing. Photoluminescence spectra are correlated with annealing temperatures, and compared with theoretical predictions for various possible luminescence mechanisms, such as radiative recombination of quantum-confined excitons, as well as possible localized state luminescence related to structural defects in SiO2. Potential optoelectronic device applications are also discussed.

scholarly journals Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Sung Kim ◽  
Dong Hee Shin ◽  
Dong Yeol Shin ◽  
Chang Oh Kim ◽  
Jae Hee Park ◽  
...  
Keyword(s):  
Recent Progress ◽  
Ion Beam ◽  
Single Layer ◽  
Optoelectronic Device ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
The Past ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Device Applications

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition ofSiOxsingle layer orSiOx/SiO2multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOxlayers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication

2001 ◽  
Vol 57-58 ◽  
pp. 891-896 ◽  
Author(s):  
S. Rennon ◽  
L. Bach ◽  
H. König ◽  
J.P. Reithmaier ◽  
A. Forchel ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Device Fabrication ◽  
Nanoscale Patterning

The Challenges of FIB Chip Repair and Debug Assistance in the 0.25μm Copper Interconnect Millennium

1998 ◽  
Author(s):  
S.B. Herschbein ◽  
L.S. Fischer ◽  
T.L. Kane ◽  
M.P. Tenney ◽  
A.D. Shore
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Grain Structure ◽  
Long Term Storage ◽  
Wagon Wheel ◽  
Sram Cell ◽  
Oxide Deposition ◽  
Reliable Isolation

Abstract Copper will probably replace aluminum alloys as the interconnect metallurgy of choice for high performance semiconductor devices. This transition will challenge the suitability of established practices in focused ion beam (FIB) chip repair. A fundamental rethink in methodology, techniques, and process gases will be required to deal with the new metal films. This paper discusses the results of recent experiments in the areas of FIB exposure, cuts and connections to buried copper lines. While copper tends to mill faster than aluminum, etch rate variations due to grain structure tend to make reliable isolation cuts more difficult. The films also have been shown to suffer regrowth and surface reactions during long term storage following FIB exposure. Attempts at halogen gas assisted etch (GAE) mills result in undesirable removal characteristics, and in the case of bromine, the spontaneous destruction of all exposed copper in the immediate area. Resistance measurements and reliability of deposited tungsten connections to copper lines are also presented. In addition, the latest techniques developed for aluminum wiring isolation and device characterization are shown. These include 'cleanup' methods for achieving good circuit isolation without the extensive use of local oxide deposition, and the latest multilevel version of the FIB ‘wagon wheel’ for SRAM cell characterization. Also included is preliminary data from a custom built FIB chamber four manipulator prober module.

IIB-2 a novel high-performance MOSFET fabricated using focused ion-beam doping

1984 ◽  
Vol 31 (12) ◽  
pp. 1964-1965
Author(s):  
Y. Waja ◽  
S. Shukuri ◽  
M. Tamura ◽  
H. Masuda ◽  
T. Ishitani
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam

Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication

2005 ◽  
Vol 11 (6) ◽  
pp. 1292-1298 ◽  
Author(s):  
Y.K. Kim ◽  
A.J. Danner ◽  
J.J. Raftery ◽  
K.D. Choquette
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Device Fabrication
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