scholarly journals Edge Control in the Computer-Controlled Optical Surface

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1154
Author(s):  
Lianmin Yin ◽  
Hao Hu ◽  
Chaoliang Guan ◽  
Yifan Dai ◽  
Zelong Li
Keyword(s):  
Edge Effect ◽  
Single Crystal Silicon ◽  
Pressure Change ◽  
Silicon Sample ◽  
Optical Surface ◽  
Polishing Process ◽  
Crystal Silicon ◽  
Application Range ◽  
Fundamental Causes ◽  
Computer Controlled

The computer-controlled optical surface (CCOS) can process good optical surfaces, but its edge effect greatly affects its development and application range. In this paper, based on the two fundamental causes of the CCOS’s edge effect—namely the nonlinear variation of edge pressure and the unreachable edge removal—a combined polishing method of double-rotor polishing and spin-polishing is proposed. The model of the combined polishing method is established and theoretically analyzed. Combined with the advantages of double-rotor polishing and spin-polishing, the combined polishing process can achieve full-aperture machining without pressure change. Finally, the single-crystal silicon sample with a diameter of 100 mm is polished by the combined polishing process. The results show that, compared with the traditional CCOS polishing, the residual error of the sample after the combined polishing process is more convergent, and the edge effect is effectively controlled.

Low-background single-crystal silicon sample holders for neutron powder diffraction

2007 ◽  
Vol 40 (3) ◽  
pp. 489-495 ◽  
Author(s):  
M. Potter ◽  
H. Fritzsche ◽  
D. H. Ryan ◽  
L. M. D. Cranswick
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Neutron Powder Diffraction ◽  
The Other ◽  
Silicon Sample ◽  
Large Area ◽  
Crystal Silicon ◽  
Low Background ◽  
Plate Geometry ◽  
Null Matrix

Neutron diffraction measurements on weakly scattering or highly absorbing samples may demand custom mounting solutions. Two low-background sample holders based on inexpensive single-crystal silicon are described. One uses a conventional cylindrical geometry and is optimized for weakly scattering materials, while the other has a large-area flat-plate geometry and is designed for use with highly absorbing samples. Both holders yield much lower backgrounds than more conventional null-matrix or null-scattering materials and are essentially free from interfering Bragg peaks.

Flat-plate single-crystal silicon sample holders for neutron powder diffraction studies of highly absorbing gadolinium compounds

2008 ◽  
Vol 41 (1) ◽  
pp. 198-205 ◽  
Author(s):  
D. H. Ryan ◽  
L. M. D. Cranswick
Keyword(s):  
Single Crystal ◽  
Flat Plate ◽  
Single Crystal Silicon ◽  
Magnetic Ordering ◽  
Silicon Sample ◽  
Large Area ◽  
Crystal Silicon ◽  
Thin Sample ◽  
Diffraction Patterns ◽  
Alloys And Compounds

The extreme absorption cross section of natural gadolinium has so far precluded routine neutron diffraction work on its alloys and compounds. However, it is shown here that an easily constructed flat-plate sample holder with silicon single-crystal windows can be used to place a thin layer of material in a neutron beam and obtain Rietveld refinement quality diffraction data in a modest time. The flat-plate geometry uses a large area to compensate for the necessarily thin sample. Demonstration data are presented on two intermetallic compounds, Sm3Ag4Sn4and Gd3Ag4Sn4, and it is shown that both structural and magnetic information can be derived from the diffraction patterns. By working at a wavelength of 2.37 Å, it is possible to observe the low-Qdiffraction peaks associated with magnetic ordering. This simple methodology should now enable routine measurements on even the most highly absorbing materials.

scholarly journals Laser-dilatometer calibration using a single-crystal silicon sample

2019 ◽  
Vol 13 (1) ◽  
pp. 18-29 ◽  
Author(s):  
Ines Hamann ◽  
Josep Sanjuan ◽  
Ruven Spannagel ◽  
Martin Gohlke ◽  
Gudrun Wanner ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Sample ◽  
Crystal Silicon

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Strain measurement by means of bend contour microscopy

1989 ◽  
Vol 47 ◽  
pp. 210-211
Author(s):  
Philip D. Hren
Keyword(s):  
Strain Measurement ◽  
Large Angle ◽  
Single Crystal Silicon ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Silicon Membrane ◽  
Crystal Silicon ◽  
Contour Pattern ◽  
Convergent Beam ◽  
Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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