scholarly journals Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1049
Author(s):  
Nayan C. Das ◽  
Minjae Kim ◽  
Jarnardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Magnesium Fluoride ◽  
Data Retention ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Operational Characteristics ◽  
Switching Mode ◽  
Limited Conduction ◽  
Resistive Switching Mechanism

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

scholarly journals A comprehensive investigation of MoO3 based resistive random access memory

RSC Advances ◽  
2020 ◽  
Vol 10 (33) ◽  
pp. 19337-19345 ◽  
Author(s):  
Jameela Fatheema ◽  
Tauseef Shahid ◽  
Mohammad Ali Mohammad ◽  
Amjad Islam ◽  
Fouzia Malik ◽  
...  
Keyword(s):  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Comprehensive Investigation ◽  
Bipolar Resistive Switching

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

Bipolar resistive switching of chromium oxide for resistive random access memory

2011 ◽  
Vol 62 (1) ◽  
pp. 40-43 ◽  
Author(s):  
Shih-Cheng Chen ◽  
Ting-Chang Chang ◽  
Shih-Yang Chen ◽  
Chi-Wen Chen ◽  
Shih-Ching Chen ◽  
...  
Keyword(s):  
Chromium Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching

Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 226-230 ◽  
Author(s):  
Kai-Jhih Gan ◽  
Po-Tsun Liu ◽  
Sheng-Jie Lin ◽  
Dun-Bao Ruan ◽  
Ta-Chun Chien ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Indium Zinc Oxide ◽  
Switching Characteristics

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

scholarly journals Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 504
Author(s):  
Wei-Lun Huang ◽  
Yong-Zhe Lin ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Resistive Switching ◽  
Rf Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Reset Voltage ◽  
Resistance State ◽  
Conductive Mechanism

In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable.

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