scholarly journals ZnS Quantum Dot Based Acetone Sensor for Monitoring Health-Hazardous Gases in Indoor/Outdoor Environment

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 598
Author(s):  
Rajneesh Kumar Mishra ◽  
Gyu-Jin Choi ◽  
Hyeon-Jong Choi ◽  
Jin-Seog Gwag

This study reports the ZnS quantum dots (QDs) synthesis by a hot-injection method for acetone gas sensing applications. The prepared ZnS QDs were characterized by X-ray diffraction (XRD) and transmission electron microscopy analysis. The XRD result confirms the successful formation of the wurtzite phase of ZnS, with a size of ~5 nm. Transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and fast Fourier transform (FFT) images reveal the synthesis of agglomerated ZnS QDs with different sizes, with lattice spacing (0.31 nm) corresponding to (111) lattice plane. The ZnS QDs sensor reveals a high sensitivity (92.4%) and fast response and recovery time (5.5 s and 6.7 s, respectively) for 100 ppm acetone at 175 °C. In addition, the ZnS QDs sensor elucidates high acetone selectivity of 91.1% as compared with other intrusive gases such as ammonia (16.0%), toluene (21.1%), ethanol (26.3%), butanol (11.2%), formaldehyde (9.6%), isopropanol (22.3%), and benzene (18.7%) for 100 ppm acetone concentration at 175 °C. Furthermore, it depicts outstanding stability (89.1%) during thirty days, with five day intervals, for 100 ppm at an operating temperature of 175 °C. In addition, the ZnS QDs acetone sensor elucidates a theoretical detection limit of ~1.2 ppm at 175 °C. Therefore, ZnS QDs can be a promising and quick traceable sensor nanomaterial for acetone sensing applications.

2014 ◽  
Vol 47 (5) ◽  
pp. 1729-1735 ◽  
Author(s):  
Xin Nie ◽  
Yimin Guan ◽  
Dongshan Zhao ◽  
Yu Liu ◽  
Jianian Gui ◽  
...  

The crystallographic orientation relationships (ORs) of precipitated β-Mg2Sn particles in Mg–9.76 wt% Sn alloy aged at 573 K for 5 h, corresponding to its peak hardness, were investigated by advanced transmission electron microscopy (TEM). OR-3 of (110)β//(0001)αand [\overline 111]β//[1\overline 210]αand OR-4 of (110)β//(0001)αand [001]β//[2\overline 1\overline 10]αare the key ORs of β-Mg2Sn particles in the alloy. The proportions of β-Mg2Sn particles exhibiting OR-3 and OR-4 were determined as 75.1 and 24.3%, respectively. Crystallographic factors determined the predominance of OR-3 in the precipitated β-Mg2Sn particles. This mechanism was analyzed by a three-dimensional invariant line model constructed using a transformation matrix in reciprocal space. Models of the interface of precipitated β-Mg2Sn and the α-Mg matrix were constructedviahigh-resolution TEM and atomic resolution high-angle annular dark-field scanning TEM.


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