scholarly journals An RFID-Based Self-Biased 40 nm Low Power LDO Regulator for IoT Applications

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 396
Author(s):  
Asghar Bahramali ◽  
Marisa Lopez-Vallejo

There are emerging applications, like bridge structural health monitoring, continuous patient condition and outdoor aiding of the elderly and the disabled, where Internet of things (IoT) nodes are used with very limited accessibility and no connection to the main supply network. They may also be exposed to harsh environmental conditions. These are applications where power and available area constraints are of great concern. In this paper, we design a 1.1 V low dropout (LDO) linear regulator in 40 nm technology to be embedded in IoT nodes. To address these constraints, we used state-of-the-art, variability-aware resistor-less sub-threshold biased CMOS-only ultra low power consumption configurations having low active area. The proposed LDO is internally compensated with embedded 18 pF Miller and 10 pF load capacitances. It can supply 1 mA maximum load current with 0.8 uA quiescent current. The dropout voltage of the regulator is 200 mV with minimum input voltage of 1.3 V. The efficiency of the regulator is 84%, which is about 99% of the maximum achievable efficiency for a 200 mV dropout voltage. The whole circuit, consisting of the embedded voltage reference and the Miller and load capacitances, takes less than 0.007 mm2 of the die size with 1 μW power consumption.

Author(s):  
George M. Joseph ◽  
Emmanouel George ◽  
Prathyush S. Pramod ◽  
Zameel Nizam ◽  
S. Krishnapriya ◽  
...  

A regulated power supply with ultra-low-power consumption, high current efficiency, line, load and thermal stability is an essential part of any high precision electronic system with stringent power budget such as biomedical sensors or military surveillance systems. In this paper, we propose an ultra-low-power, MOSFET only, voltage reference to regulator convertor, proficient to work below 1 V with reduced power consumption. The proposed idea incorporates the provision to integrate any voltage reference module to a comparator-based circuit so as to transform it to a voltage regulator having similar temperature coefficient (TC) and line regulation as that of the interfaced voltage reference. It is also able to produce a reliable output accounting to load fluctuations. The circuit is simulated in 0.18[Formula: see text][Formula: see text]m CMOS technology using Cadence Virtuoso simulation suit. The complete circuit was found to draw a quiescent current of 319.9 pA with a notable current efficiency of 99.99997% at 27∘C on driving a load of 1[Formula: see text]mA along with a Power Supply Rejection Ratio (PSRR) of [Formula: see text][Formula: see text]dB additional to that of the reference. The proposed circuit will occupy an area of 0.00064[Formula: see text]mm2 and offer a TC as low as 1.7077 ppm/∘C. The whole MOS approach facilitates a reduction in die area and process simplicity.


2016 ◽  
Vol 136 (11) ◽  
pp. 1555-1566 ◽  
Author(s):  
Jun Fujiwara ◽  
Hiroshi Harada ◽  
Takuya Kawata ◽  
Kentaro Sakamoto ◽  
Sota Tsuchiya ◽  
...  

Nano Letters ◽  
2013 ◽  
Vol 13 (4) ◽  
pp. 1451-1456 ◽  
Author(s):  
T. Barois ◽  
A. Ayari ◽  
P. Vincent ◽  
S. Perisanu ◽  
P. Poncharal ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.


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